Pagina 65 - PMIC - Gate driver | Circuiti integrati (CI) | Heisener Electronics
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PMIC - Gate driver

Record 7.713
Pagina  65/276
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IR2109STR
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione48.588
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5048AAUT-T
Maxim Integrated

IC MOSFET DRIVER HS SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: SOT-23-6
Azione6.656
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
-
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot LM5109AMAX
Texas Instruments

IC DVR HALF-BRIDGE 100V 1A 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 108V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione64.428
Independent
2
N-Channel MOSFET
8 V ~ 14 V
0.8V, 2.2V
1A, 1A
Non-Inverting
108V
15ns, 15ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot LM2726MX
Texas Instruments

IC MOSFET DRIVER HI SPD 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 7 V
  • Logic Voltage - VIL, VIH: 0.25V, 2.4V
  • Current - Peak Output (Source, Sink): 3A, 3.2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 42V
  • Rise / Fall Time (Typ): 17ns, 12ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione247.380
Synchronous
2
N-Channel MOSFET
4 V ~ 7 V
0.25V, 2.4V
3A, 3.2A
Non-Inverting
42V
17ns, 12ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5062DASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione3.712
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MC33883DWR2
NXP

IC H-BRIDGE PRE-DRIVER 20-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 55V
  • Rise / Fall Time (Typ): 80ns, 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
pacchetto: 20-SOIC (0.295", 7.50mm Width)
Azione5.472
Independent
4
N-Channel MOSFET
5.5 V ~ 28 V
0.8V, 2V
1A, 1A
Non-Inverting
55V
80ns, 80ns
-40°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
hot IRS21084STRPBF
Infineon Technologies

IC DRIVER HALF-BRIDGE 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione89.700
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Inverting, Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
IXDN630MCI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
pacchetto: TO-220-5
Azione6.400
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDI630MYI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione2.656
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI614YI
IXYS Integrated Circuits Division

14A 5 LEAD TO-263 INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Azione2.656
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
hot ISL6612BCBZ-T
Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione34.800
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MIC4600YML-T5
Microchip Technology

IC MOSFET DVR 28V HALF 16QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.65V, 1.4V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 13.5ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
pacchetto: 16-VFQFN Exposed Pad
Azione7.776
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
0.65V, 1.4V
-
Non-Inverting
-
15ns, 13.5ns
-40°C ~ 125°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
ISL2100AAR3Z-T
Intersil

IC DVR HALF-BRDG HF 100V 2A 9DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 3.7V, 7.4V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad (9 Leads)
  • Supplier Device Package: 9-DFN-EP (3x3)
pacchetto: 10-VFDFN Exposed Pad (9 Leads)
Azione5.952
Independent
2
N-Channel MOSFET
9 V ~ 14 V
3.7V, 7.4V
2A, 2A
Non-Inverting
114V
10ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad (9 Leads)
9-DFN-EP (3x3)
TC4426AVUA
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione5.216
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
25ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot IR2106SPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione86.508
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MIC4125YME
Microchip Technology

IC MOSFET DRVR INV/NONINV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione64.476
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 20 V
0.8V, 2.4V
3A, 3A
Inverting, Non-Inverting
-
11ns, 11ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot ISL6615IRZ
Intersil

IC MOSFET DRVR SYNC HF 6A 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 13ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
pacchetto: 10-VFDFN Exposed Pad
Azione6.240
Synchronous
2
N-Channel MOSFET
6.8 V ~ 13.2 V
-
2.5A, 4A
Non-Inverting
36V
13ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
MAX15018AASA+
Maxim Integrated

IC MOSF DRVR HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 50ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione7.072
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
3A, 3A
Non-Inverting
125V
50ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IR2102SPBF
Infineon Technologies

IC DRIVER HI/LOW SIDE 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 210mA, 360mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.288
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3V
210mA, 360mA
Inverting
600V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
EL7242CSZ
Renesas Electronics America

IC DVR HS DUAL MOSFET 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione17.202
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 16 V
0.8V, 2.4V
2A, 2A
Inverting, Non-Inverting
-
10ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
HIP2101EIBZ
Renesas Electronics America

IC DRIVER HALF BRDG 100V 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione17.142
Independent
2
N-Channel MOSFET
9 V ~ 14 V
0.8V, 2.2V
2A, 2A
Non-Inverting
114V
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot HIP4086APZ
Renesas Electronics America

IC DRIVER FET 3PHASE N-CH 24DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 20ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP (0.300", 7.62mm)
  • Supplier Device Package: 24-PDIP
pacchetto: 24-DIP (0.300", 7.62mm)
Azione4.720
3-Phase
6
N-Channel MOSFET
7 V ~ 15 V
1V, 2.5V
500mA, 500mA
Inverting, Non-Inverting
95V
20ns, 10ns
-40°C ~ 150°C (TJ)
Through Hole
24-DIP (0.300", 7.62mm)
24-PDIP
FAN7171M
ON Semiconductor

IC GATE DVR HIGH SIDE 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.216
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4A, 4A
Non-Inverting
600V
25ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6614BIRZ
Renesas Electronics America

IC DRVR DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
pacchetto: 16-VQFN Exposed Pad
Azione7.456
Synchronous
4
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
1EDN7116GXTMA1
Infineon Technologies

IC GATE DRIVER HI/LO SIDE 10VSON

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.2V ~ 11V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 3ns, 3ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: PG-VSON-10-4
pacchetto: -
Azione23.541
Independent
2
N-Channel MOSFET
4.2V ~ 11V
-
2A, 2A
Non-Inverting
-
3ns, 3ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
PG-VSON-10-4
1SP0335V2M1-FZ600R65KE3
Power Integrations

IGBT GATE DRIVER P/P 1CH SCALE-2

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 23.5V ~ 26.5V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 35A, 35A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 6500 V
  • Rise / Fall Time (Typ): 9ns, 30ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Request a Quote
Single
1
IGBT
23.5V ~ 26.5V
-
35A, 35A
-
6500 V
9ns, 30ns
-40°C ~ 85°C
Chassis Mount
Module
Module
ADP3418KRZ
onsemi

IC MOSFET DVR DUAL BOOTST 8-SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
1SD210F2-FZ250R65KE3_OPT1
Power Integrations

IGBT DRIVER P/P 1CH COATING

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 15.5V ~ 16.8V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 10A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200 V
  • Rise / Fall Time (Typ): 100ns, 100ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Request a Quote
Single
1
IGBT
15.5V ~ 16.8V
-
6A, 10A
-
1200 V
100ns, 100ns
-40°C ~ 85°C
Chassis Mount
Module
Module