Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
IC MOSFET DVR SYNC 4.5A HS 8WSON
|
pacchetto: 8-WDFN Exposed Pad |
Azione7.040 |
|
Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.85 V | - | 3A, 4.5A | Non-Inverting | 33V | 17ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (4x4) |
||
Vishay Siliconix |
IC DRIVER GATE HALF BRIDGE 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.368 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1A, 1A | Non-Inverting | 30V | 30ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.176 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC GATE DRIVER 4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione6.480 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.424 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC HIGH CURR GATE DRVR 9A TO-263
|
pacchetto: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Azione22.740 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263 (D2Pak) |
||
Intersil |
IC DRIVER MOSF DUAL SYNC 14SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione2.576 |
|
Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione2.784 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
||
Infineon Technologies |
IC DVR HALF BRIDGE 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione34.644 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Texas Instruments |
IC DVR HIGH/LOW SIDE 3A 8SON
|
pacchetto: 8-VDFN Exposed Pad |
Azione2.144 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 3V, 8V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-VSON (4x4) |
||
Microchip Technology |
IC MOSFET DRIVER 3A 8DFN-S
|
pacchetto: 8-VDFN Exposed Pad |
Azione5.328 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Microchip Technology |
IC MOSFET DVR .5A HS INV 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione545.076 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Azione9.924 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
||
STMicroelectronics |
IC GATE DVR 4A HIGH/LOW 14SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione8.340 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.45V, 2V | 4A, 4A | Non-Inverting | 600V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
||
Microchip Technology |
IC DRIVER MOSFET 12A HS 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione726.480 |
|
Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 12A, 12A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Analog Devices Inc. |
IC MOSFET DVR 4A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione178.944 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4A, 4A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Fairchild/ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione25.482 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Linear Technology |
IC MOSFET DRIVER 3.3V DUAL 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.928 |
|
Independent | 2 | N-Channel MOSFET | 3.3 V ~ 5 V | - | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8-DFN
|
pacchetto: 8-VFDFN Exposed Pad |
Azione1.861.572 |
|
Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Inverting, Non-Inverting | 35V | 20ns, 11ns | -20°C ~ 150°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (3x3) |
||
Texas Instruments |
IC COMPL MOSFET DRVR TO-220-5
|
pacchetto: TO-220-5 |
Azione6.240 |
|
Single | 1 | IGBT, N-Channel MOSFET | 4.7 V ~ 18 V | 0.8V, 2V | 6A, 6A | Inverting, Non-Inverting | - | 85ns, 85ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Microchip Technology |
IC DRIVER MOSFET 100V TTL 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione8.688 |
|
Synchronous | 2 | N-Channel MOSFET | 9 V ~ 16 V | 0.8V, 2.2V | 2A, 3A | Non-Inverting | 118V | 330ns, 200ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC DRVR MOSFET DUAL-CH 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.800 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.752 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5 V ~ 20 V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600V | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione10.464 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC DRVR HALF BRDG 100V 8EP-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione3.632 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Renesas Electronics America |
IC DRIVER H-BRIDGE 16-DIP
|
pacchetto: 16-DIP (0.300", 7.62mm) |
Azione5.296 |
|
Independent | 4 | N-Channel MOSFET | 8.5 V ~ 15 V | 1V, 2.5V | 1.4A, 1.3A | Non-Inverting | 95V | 9ns, 9ns | -55°C ~ 150°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
||
Harris Corporation |
DUAL POWER MOSFET DRIVER
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | N-Channel MOSFET | 4.5V ~ 15V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | TO-99-8 Metal Can | TO-99-8 |
||
onsemi |
IGBT GATE DRIVERS, HIGH-CURRENT,
|
pacchetto: - |
Azione468 |
|
Single | 1 | IGBT | 20V | 0.75V, 4.3V | 7.8A, 6.8A | Non-Inverting | - | 9.2ns, 7.9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |