Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
IC DRIVER PRE FET 4 CHAN 24-SSOP
|
pacchetto: 24-SSOP (0.209", 5.30mm Width) |
Azione4.192 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1.2mA, 1.2mA | Non-Inverting | - | 3.5µs, 3µs | -40°C ~ 150°C (TJ) | Surface Mount | 24-SSOP (0.209", 5.30mm Width) | 24-SSOP |
||
Texas Instruments |
IC BUCK MOSFET DRIVER 16-HTSSOP
|
pacchetto: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad |
Azione3.280 |
|
Synchronous | 2 | N-Channel MOSFET | 10 V ~ 15 V | 1V, 2V | 4A, 4A | Non-Inverting | 29V | 65ns, 65ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-TSSOP (0.173", 4.40mm Width) Exposed Pad | 16-HTSSOP |
||
IXYS |
IC MOSFET DRIVER DUAL 2A 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione5.920 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione2.304 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
||
Microchip Technology |
IC MOSFET DRIVER 6A HS 8CDIP
|
pacchetto: 8-CDIP (0.300", 7.62mm) |
Azione4.704 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 7 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 23ns, 25ns | -55°C ~ 150°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CDIP |
||
Texas Instruments |
IC MOSFET DRIVER SYNC 8WSON
|
pacchetto: 8-WFDFN Exposed Pad |
Azione7.248 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 2.65V | - | Non-Inverting | 35V | 30ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-WSON (2x2) |
||
Intersil |
IC DRVR MOSF SYNC BUCK OTP 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione33.000 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ON Semiconductor |
IC DRIVER HI/LO 600V 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione5.328 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 250mA, 500mA | Non-Inverting | 600V | 85ns, 35ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC MOSFET DVR 2A SYNC BUCK 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.328 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.5V, 2V | 2A, 2A | Non-Inverting | 36V | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
MOSFET DRIVER 8DFN
|
pacchetto: 8-VFDFN Exposed Pad |
Azione85.656 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -10°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) |
||
Monolithic Power Systems Inc. |
IC GATE DRIVER
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.120 |
|
Independent | 2 | N-Channel MOSFET | 10 V ~ 16 V | 0.8V, 2.5V | 350mA, 350mA | Non-Inverting | 80V | 50ns, 30ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Melexis Technologies NV |
AUTOMOTIVE 3 PHASE DC PRE DRIVER
|
pacchetto: 32-VFQFN Exposed Pad |
Azione7.104 |
|
3-Phase | 6 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 1.5V | 1.4A, 1.6A | - | - | 7ns, 7ns | -40°C ~ 150°C (TJ) | Surface Mount | 32-VFQFN Exposed Pad | 32-QFN (5x5) |
||
Microchip Technology |
IC MOSFET DRIVER HI/LOSIDE 8-DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione4.032 |
|
Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Inverting | - | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione825.372 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR DUAL SYNC 14-SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione4.560 |
|
Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | -, 4A | Non-Inverting | 36V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Infineon Technologies |
DRIVER IC
|
pacchetto: SOT-23-6 |
Azione7.696 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 1.2V, 1.9V | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | PG-SOT23-6-2 |
||
ON Semiconductor |
IC GATE DRVR SGL CMOS 2A 6MLP
|
pacchetto: 6-VDFN Exposed Pad |
Azione144.000 |
|
Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 13ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MLP (2x2) |
||
Microchip Technology |
3.0A MATCHED, HIGH -SPEED, LOW-S
|
pacchetto: 8-WFDFN Exposed Pad |
Azione14.952 |
|
Independent | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
||
Power Integrations |
MODULE GATE DVR P&P SCALE 1
|
pacchetto: - |
Azione4.128 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
IC MOSFET DVR SYNC BUCK 8QFN
|
pacchetto: 8-VQFN Exposed Pad |
Azione2.288 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-QFN (3x3) |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
|
pacchetto: 10-VFDFN Exposed Pad |
Azione7.440 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.576 |
|
Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8EPSOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione3.312 |
|
Synchronous | 2 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Renesas Electronics America |
IC FET DRVR 60V/2.5A HF 20-SOIC
|
pacchetto: 20-SOIC (0.295", 7.50mm Width) |
Azione3.024 |
|
Synchronous | 4 | N-Channel MOSFET | 9.5 V ~ 15 V | 1V, 2.5V | 2.6A, 2.4A | Inverting, Non-Inverting | 75V | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
||
Power Integrations |
IGBT GATE DRIVER P/P 1CH SCALE-2
|
pacchetto: - |
Request a Quote |
|
Single | 1 | IGBT | 23.5V ~ 26.5V | - | 35A, 35A | - | 6500 V | 9ns, 30ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
||
Power Integrations |
GATE DRIVER CORE, SCALE-2, 1700V
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | IGBT | 14.5V ~ 15.5V | - | 8A, 8A | - | 1700 V | 17ns, 15ns | -40°C ~ 85°C (TA) | Chassis Mount | Module | Module |
||
Microchip Technology |
HALF BRIDGE DRIVER, NON-INVERTIN
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | N-Channel MOSFET | 4.5V ~ 20V | 0.7V, 2V | 500mA, 500mA | Non-Inverting | - | 35ns, 30ns | -55°C ~ 125°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
||
Texas Instruments |
1.5-A/1.5-A DUAL-CHANNEL GATE DR
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 5V ~ 40V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 130ns, 120ns | -55°C ~ 125°C | Through Hole | 16-CDIP (0.300", 7.62mm) | 16-CDIP |