Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 14SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione12.060 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 15ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.968 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Maxim Integrated |
IC MOSFET DVR 4A 20NS DUAL 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione4.816 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Intersil |
MOSFET DRIVER 2CH 6A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione2.672 |
|
Independent | 2 | N-Channel MOSFET | 7.5 V ~ 16 V | 2.4V, 9.6V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Texas Instruments |
IC SYNC BUCK DRIVER HS 14HTSSOP
|
pacchetto: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad |
Azione5.616 |
|
Synchronous | 2 | N-Channel MOSFET | 3.7 V ~ 20 V | 0.7V, 2.6V | 4A, 4A | Inverting | - | 17ns, 17ns | -55°C ~ 115°C (TJ) | Surface Mount | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-HTSSOP |
||
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione145.452 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Texas Instruments |
IC DUAL HS MOSFET DRVR 8-TSSOP
|
pacchetto: 8-TSSOP (0.173", 4.40mm Width) |
Azione7.428 |
|
Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
STMicroelectronics |
IC MOSFET DRVR 8-VFDFPN
|
pacchetto: 8-VFDFN Exposed Pad |
Azione2.128 |
|
Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 3.5A, - | Inverting | 41V | - | 0°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) |
||
Fairchild/ON Semiconductor |
IC GATE DVR DUAL 4A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.624 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 10-DFN
|
pacchetto: 10-VFDFN Exposed Pad |
Azione87.432 |
|
Synchronous | 2 | N-Channel MOSFET | 6.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8DIP
|
pacchetto: 8-DIP (0.300", 7.62mm) |
Azione4.176 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Powerex Inc. |
IC IGBT GATE DVR ISO 3A
|
pacchetto: 14-SIP Module, 12 Leads |
Azione4.752 |
|
Single | 1 | IGBT | 14 V ~ 17 V | - | 3A, 3A | Non-Inverting | - | 300ns, 300ns | -20°C ~ 70°C (TA) | Through Hole | 14-SIP Module, 12 Leads | Module |
||
Maxim Integrated |
IC DRVR MOSFET QUAD 18-DIP
|
pacchetto: 18-DIP (0.300", 7.62mm) |
Azione7.120 |
|
Independent | 4 | N-Channel MOSFET | 4.5 V ~ 16.5 V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-PDIP |
||
Microchip Technology |
IC MOSFET DVR QUAD NAND 16SOIC
|
pacchetto: 16-SOIC (0.295", 7.50mm Width) |
Azione2.000 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Texas Instruments |
IC MOSFET DRIVER SYNC 8WSON
|
pacchetto: 8-WFDFN Exposed Pad |
Azione6.464 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.6V, 2.65V | - | Non-Inverting | 35V | 30ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-WSON (2x2) |
||
ON Semiconductor |
IC DRIVER HALF BRIDGE HV 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione240.240 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.3V | 250mA, 500mA | Non-Inverting | 600V | 85ns, 35ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Diodes Incorporated |
IC GATE DVR HV 10-WDFN
|
pacchetto: 10-WFDFN Exposed Pad |
Azione2.336 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 |
||
Texas Instruments |
IC DVR HIGH/LOW SIDE 4A 8SOPWR
|
pacchetto: 8-PowerSOIC (0.154", 3.90mm Width) |
Azione48.264 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 2.4V, 5.9V | 4A, 4A | Non-Inverting | 120V | 7.2ns, 5.5ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-PowerSOIC (0.154", 3.90mm Width) | 8-SO PowerPad |
||
STMicroelectronics |
PWR MGMT MOSFET/PWR DRIVER
|
pacchetto: - |
Azione6.112 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 10-DFN
|
pacchetto: 10-VFDFN Exposed Pad |
Azione6.848 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.528 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1V, 2V | 2A, 2A | Non-Inverting | 36V | 8ns, 8ns | -10°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ON Semiconductor |
INTEGRATED DRIVER & MOSFF
|
pacchetto: 39-PowerVFQFN |
Azione7.616 |
|
Single | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.65V, 2.7V | 100mA, 100mA | Non-Inverting | 30V | 17ns, 26ns | -40°C ~ 125°C (TJ) | Surface Mount | 39-PowerVFQFN | 39-PQFN (5x6) |
||
Power Integrations |
IGBT DRIVER P/P 1CH COATING
|
pacchetto: - |
Request a Quote |
|
Single | 1 | IGBT | 15.5V ~ 16.8V | - | 6A, 10A | - | 1200 V | 100ns, 100ns | -40°C ~ 85°C | Chassis Mount | Module | Module |
||
Renesas Electronics Corporation |
100V/4A HI/LI HALF BRIDGE DRIVER
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | N-Channel MOSFET | 6V ~ 18V | 1.47V, 1.84V | 3A, 4A | Non-Inverting | 115 V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
||
Analog Devices Inc. |
150V DUAL SYMMETRIC GATE DRIVER
|
pacchetto: - |
Request a Quote |
|
- | - | - | 5V ~ 14V | - | - | - | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 12-TSSOP (0.118", 3.00mm Width) Exposed Pad | 12-MSOP-EP |
||
Allegro MicroSystems |
SAFETY BLDC GATE DRIVER WITH PHA
|
pacchetto: - |
Azione12.000 |
|
3-Phase | 6 | N-Channel MOSFET | 4.5V ~ 50V | 0.99V, 2.1V | 1.1A, 2.2A | Non-Inverting | - | - | -40°C ~ 150°C (TA) | Surface Mount, Wettable Flank | 48-VFQFN Exposed Pad | 48-QFN (7x7) |
||
Analog Devices Inc. |
DUAL BOOTSTRAPPED MOSFET DRIVER
|
pacchetto: - |
Request a Quote |
|
Synchronous | 2 | N-Channel MOSFET | 4.15V ~ 7.5V | 0.8V, 2.3V | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Texas Instruments |
1.5-A/1.5-A DUAL-CHANNEL GATE DR
|
pacchetto: - |
Request a Quote |
|
Independent | 2 | IGBT, N-Channel MOSFET | 5V ~ 40V | 0.8V, 2.2 V | 1.5A, 1.5A | Inverting | - | 40ns, 40ns | -55°C ~ 125°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CDIP |