Pagina 636 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  636/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IDT71V416S15YI8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
pacchetto: 44-BSOJ (0.400", 10.16mm Width)
Azione6.192
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
IDT71V3577YS80PFI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione2.608
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
-
-
8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IDT71T016SA15PHI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione2.208
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
15ns
15ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IDT709199L9PFI8
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.125Mb (128K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione4.640
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (128K x 9)
Parallel
-
-
9ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AT93C56W-10SC
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.496
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
2MHz
10ms
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
7006S17PF
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 17NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione5.424
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
17ns
17ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS64WV25616EDBLL-10CTLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione7.408
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS43DR16320D-25DBLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
pacchetto: 84-TFBGA
Azione7.792
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
AS4C4M16SA-6TINTR
Alliance Memory, Inc.

IC SDRAM 64MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 2ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione4.208
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
2ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
25AA640AT-E/ST
Microchip Technology

IC EEPROM 64KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.648
EEPROM
EEPROM
64Kb (8K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IS61LPS25636B-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
pacchetto: 100-LQFP
Azione7.888
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
CY7C1345S-100AXC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT 100MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.128
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
100MHz
-
8ns
3.15 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY7C1011DV33-10ZSXIT
Cypress Semiconductor Corp

IC SRAM 2MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione5.088
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
93AA66BT-I/MC
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
pacchetto: 8-VFDFN Exposed Pad
Azione60.840
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
S25FL128SAGBHI300
Cypress Semiconductor Corp

IC FLASH 128MBIT 133MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
pacchetto: 24-TBGA
Azione6.972
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
MX25R3235FZBIL0
Macronix

IC FLASH 32MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.096
-
-
-
-
-
-
-
-
-
-
-
-
IS43TR16128C-107MBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 195ps
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: 96-TFBGA
Azione5.536
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
933MHz
15ns
195ps
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MTFC128GAPALNA-AIT ES
Micron Technology Inc.

EMMC 1024G MMC5.1 J59X AT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.232
-
-
-
-
-
-
-
-
-
-
-
-
S25FL129P0XNFI011M
Cypress Semiconductor Corp

IC MEMORY FLASH NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: 8-WDFN Exposed Pad
Azione2.992
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
104MHz
5µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
IS43LQ32128AL-062BLI-TR
ISSI, Integrated Silicon Solution Inc

4G, 0.57-0.65V/1.06-1.17/1.70-1.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
-
-
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
71V432S10PF
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 10 ns
  • Voltage - Supply: 3.135V ~ 3.63V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
1Mbit
Parallel
-
-
10 ns
3.135V ~ 3.63V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
STK11C88-3N35I
Cypress Semiconductor Corp

NON-VOLATILE SRAM, 32KX8, 35NS,

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
X28HC256JZ-12T1
Renesas Electronics Corporation

32K X 8 EEPROM,CMOS,HIGHSPEED,32

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (13.97x11.43)
pacchetto: -
Request a Quote
EEPROM
EEPROM
256Kbit
Parallel
-
5ms
120 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (13.97x11.43)
GS82564Z36GD-400I
GSI Technology Inc.

IC SRAM 288MBIT PAR 165FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 288Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FPBGA (13x15)
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous, ZBT
288Mbit
Parallel
400 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
165-LBGA
165-FPBGA (13x15)
S29GL128S11DHVV23
Infineon Technologies

IC FLASH 128MBIT CFI 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
128Mbit
CFI
-
60ns
110 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
S26HS02GTFPBHB053
Infineon Technologies

IC FLASH 2GBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
2Gbit
HyperBus
166 MHz
-
-
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
24-VBGA
24-FBGA (8x8)
CY7C144-25AC
Cypress Semiconductor Corp

IC SRAM 64KBIT PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
64Kbit
Parallel
-
25ns
25 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
AS4C64M32MD1A-5BIN
Alliance Memory, Inc.

IC DRAM 2GBIT PARALLEL 90FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-FBGA (8x13)
pacchetto: -
Azione657
DRAM
SDRAM - Mobile LPDDR
2Gbit
Parallel
200 MHz
15ns
5 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
90-VFBGA
90-FBGA (8x13)