Pagina 569 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  569/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29C1G12MAAJVAKC-5 IT TR
Micron Technology Inc.

MCP 64MX16/32MX16 PLASTIC GREEN

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.064
-
-
-
-
-
-
-
-
-
-
-
-
hot S29GL01GP12TFI010
Cypress Semiconductor Corp

IC FLASH 1GBIT 120NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione9.324
FLASH
FLASH - NOR
1Gb (128M x 8)
Parallel
-
120ns
120ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
CY14B104N-BA20XC
Cypress Semiconductor Corp

IC NVSRAM 4MBIT 20NS 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x10)
pacchetto: 48-TFBGA
Azione3.168
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (256K x 16)
Parallel
-
20ns
20ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x10)
IDT71P73604S250BQ
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 250MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - DDR2
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.3ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione4.720
SRAM
SRAM - DDR2
18Mb (512K x 36)
Parallel
250MHz
-
6.3ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
CY7C006A-15AXCT
Cypress Semiconductor Corp

IC SRAM 128KBIT 15NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione2.848
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
AT93C46A-10SU-1.8
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8, 64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.808
EEPROM
EEPROM
1Kb (128 x 8, 64 x 16)
SPI
2MHz
10ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DSM2180F3V-15T6
STMicroelectronics

IC FLASH 1MBIT 150NS 52QFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-QFP
  • Supplier Device Package: 52-PQFP (10x10)
pacchetto: 52-QFP
Azione4.480
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
-
150ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
52-QFP
52-PQFP (10x10)
AT27BV512-12RC
Microchip Technology

IC OTP 512KBIT 120NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: 28-SOIC (0.342", 8.69mm Width)
Azione2.640
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
120ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOIC
MT53B512M64D4NH-062 WT:C TR
Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.496
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
70V18L20PF8
IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 576Kb (64K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.816
SRAM
SRAM - Dual Port, Asynchronous
576Kb (64K x 9)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot 7024S15J
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 15NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione14.352
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
71T75802S100BG8
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 100MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione6.848
SRAM
SRAM - Synchronous ZBT
18Mb (1M x 18)
Parallel
100MHz
-
5ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
70V24S20PF8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.416
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
S29GL512T12DHN010
Cypress Semiconductor Corp

IC 512MB MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
pacchetto: 64-LBGA
Azione6.208
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
120ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
MT28EW01GABA1LPC-1SIT
Micron Technology Inc.

IC FLASH 1GBIT 100NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8, 64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 95ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-LBGA (11x13)
pacchetto: 64-LBGA
Azione6.224
FLASH
FLASH - NOR
1Gb (128M x 8, 64M x 16)
Parallel
-
60ns
95ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-LBGA (11x13)
W98AD6KBGX6I TR
Winbond Electronics

1GB MSDR X16 166MHZ IND

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.376
-
-
-
-
-
-
-
-
-
-
-
-
23A512T-I/ST
Microchip Technology

IC SRAM 512KBIT 20MHZ 8TSSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione5.648
SRAM
SRAM
512Kb (64K x 8)
SPI - Quad I/O
20MHz
-
-
1.7 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
11LC080T-I/MNY
Microchip Technology

IC EEPROM 8KBIT 100KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione3.712
EEPROM
EEPROM
8Kb (1K x 8)
Single Wire
100kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
MT41K256M16TW-107 AAT:P TR
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
pacchetto: 96-TFBGA
Azione5.632
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
S29GL512S11DHB013
Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
pacchetto: 64-LBGA
Azione5.456
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
60ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-FBGA (9x9)
W948D6KBHX5I
Winbond Electronics

IC SDRAM 256MBIT 46NM 60BGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.472
-
-
-
-
-
-
-
-
-
-
-
-
MT48LC16M16A2Y66AWC1
Micron Technology Inc.

IC DRAM 256M PARALLEL 133MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.840
DRAM
SDRAM
256Mb (16M x 16)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS25LP020E-JYLA3-TR
ISSI, Integrated Silicon Solution Inc

2Mb QSPI, 8-pin USON 2x3MM, RoHS

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 40µs, 1.2ms
  • Access Time: 8 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
2Mbit
SPI - Quad I/O, QPI
104 MHz
40µs, 1.2ms
8 ns
2.3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
S25FL128SAGBHEA00
Infineon Technologies

IC FLASH 128MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
W948D6FBHX6I-TR
Winbond Electronics

IC DRAM 256MBIT PARALLEL 60VFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
RC28F320C3TD90
Intel

IC FLASH 32MBIT CFI 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 32Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (10x13)
pacchetto: -
Request a Quote
FLASH
FLASH - Boot Block
32Mbit
CFI
-
90ns
90 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-EasyBGA (10x13)
AT25040AN-10SQ-2-7
Atmel

IC EEPROM 4KBIT SPI 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
4Kbit
SPI
20 MHz
5ms
-
2.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT24C01BN-SP25-T
Atmel

IC EEPROM 1KBIT I2C 1MHZ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550 ns
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
EEPROM
EEPROM
1Kbit
I2C
1 MHz
5ms
550 ns
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
-
-
-