Pagina 531 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  531/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS62WV5128DALL-55BI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 36BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-TFBGA (6x8)
pacchetto: 36-TFBGA
Azione6.528
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
55ns
55ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
36-TFBGA
36-TFBGA (6x8)
S70GL02GP12FFI022
Cypress Semiconductor Corp

IC FLASH 2GBIT 120NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Gb (256M x 8, 128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
pacchetto: 64-LBGA
Azione5.696
FLASH
FLASH - NOR
2Gb (256M x 8, 128M x 16)
Parallel
-
-
120ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
AS4C128M16D3-12BAN
Alliance Memory, Inc.

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (13x9)
pacchetto: 96-TFBGA
Azione6.720
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (13x9)
70P269L65BYGI8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 65NS 100FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 65ns
  • Access Time: 65ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TFBGA
  • Supplier Device Package: 100-CABGA (6x6)
pacchetto: 100-TFBGA
Azione4.656
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
65ns
65ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
100-TFBGA
100-CABGA (6x6)
R1EX25064ATA00I#S0
Renesas Electronics America

IC EEPROM 64KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.152
EEPROM
EEPROM
64Kb (8K x 8)
SPI
5MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT45DB161E-MHD-Y
Microchip Technology

IC FLASH 16MBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (528 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
pacchetto: 8-UDFN Exposed Pad
Azione2.224
FLASH
FLASH
16Mb (528 Bytes x 4096 pages)
SPI
85MHz
8µs, 6ms
-
2.5 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
93C86B-E/P
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione5.232
EEPROM
EEPROM
16Kb (1K x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IS42S16400D-6TLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione3.152
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
-
5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
AT28C010-20TI
Microchip Technology

IC EEPROM 1MBIT 200NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione3.904
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
200ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
70V07S25PF
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
pacchetto: 80-LQFP
Azione5.088
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
S29GL01GT12TFN013
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.464
FLASH
FLASH - NOR
1Gb (128M x 8)
Parallel
-
60ns
120ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
-
-
-
CY15E064J-SXAT
Cypress Semiconductor Corp

F-RAM MEMORY SERIAL

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.608
FRAM
FRAM (Ferroelectric RAM)
64Kb (8K x 8)
I2C
1MHz
-
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
-
-
-
W631GG8KB-11
Winbond Electronics

IC SDRAM 1GBIT 933MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-WBGA (10.5x8)
pacchetto: 78-TFBGA
Azione6.496
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
933MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-WBGA (10.5x8)
M58LR128KT85ZB5F TR
Micron Technology Inc.

IC FLASH 128MBIT 85NS 56VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-VFBGA (7.7x9)
pacchetto: 56-VFBGA
Azione3.984
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
66MHz
85ns
85ns
1.7 V ~ 2 V
-30°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-VFBGA (7.7x9)
hot W29GL128CH9C
Winbond Electronics

IC FLASH 128MBIT 90NS 56TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8, 8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFBGA
  • Supplier Device Package: 56-TFBGA (9x7)
pacchetto: 56-TFBGA
Azione7.632
FLASH
FLASH - NOR
128Mb (16M x 8, 8M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFBGA
56-TFBGA (9x7)
hot 93LC46BT/ST
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione21.588
EEPROM
EEPROM
1Kb (64 x 16)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CY7C2165KV18-550BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 550MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 550MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione6.912
SRAM
SRAM - Synchronous, QDR II+
18Mb (512K x 36)
Parallel
550MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
hot AT25SF041-SHD-B
Adesto Technologies

IC FLASH 4MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.209", 5.30mm Width)
Azione61.740
FLASH
FLASH
4Mb (512K x 8)
SPI
104MHz
5µs, 2.5ms
-
2.5 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AS4C128M8D3B-12BAN
Alliance Memory, Inc.

IC DRAM 1G PARALLEL 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (10.5x8)
pacchetto: 78-VFBGA
Azione4.064
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
78-VFBGA
78-FBGA (10.5x8)
MT53E2G32D8QD-046 WT:E TR
Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA WT 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.472
-
-
-
-
-
-
-
-
-
-
-
-
MT25QU128ABA8E14-1SIT
Micron Technology Inc.

IC FLASH 128M SPI 24TPBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
pacchetto: 24-TBGA
Azione2.336
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT29F4G16ABADAH4-AAT:D
Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.832
FLASH
FLASH - NAND
4Gb (256M x 16)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
AT25080B-SSPDGV-T
Microchip Technology

5MHZ A-TMP 8-SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.424
EEPROM
EEPROM
8Kb (1K x 8)
SPI
5MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AS4C256M16D3LB-10BCN
Alliance Memory, Inc.

4G DDR3 256MX16 1.35V 96-BALL FB

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x13.5)
pacchetto: 96-TFBGA
Azione7.056
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x13.5)
SM662PAF-BEST
Silicon Motion, Inc.

IC FLASH 4TBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 4Tbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TBGA
  • Supplier Device Package: 153-BGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (TLC)
4Tbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TBGA
153-BGA (11.5x13)
MT62F1G64D4CZ-026-WT-C-TR
Micron Technology Inc.

LPDDR5 64GBIT 64 561/570 TFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46LD32128B-25BPLA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 4Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2-S4
4Gbit
HSUL_12
400 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
CDP1824CDX
Harris Corporation

IC SRAM 256BIT PARALLEL 18CDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256bit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 710 ns
  • Voltage - Supply: 4V ~ 6.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-CDIP
  • Supplier Device Package: 18-CDIP
pacchetto: -
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SRAM
SRAM - Asynchronous
256bit
Parallel
-
-
710 ns
4V ~ 6.5V
-40°C ~ 85°C (TA)
Through Hole
18-CDIP
18-CDIP