Pagina 389 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  389/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
1882457
Cypress Semiconductor Corp

IC FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.024
-
-
-
-
-
-
-
-
-
-
-
-
IS42VM16160E-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: 54-TFBGA
Azione5.376
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot MT46H64M32LFCX-5 AT:B
Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (9x13)
pacchetto: 90-VFBGA
Azione4.448
DRAM
SDRAM - Mobile LPDDR
2Gb (64M x 32)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (9x13)
MT48H8M32LFB5-75 AT:H
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
pacchetto: 90-VFBGA
Azione3.696
DRAM
SDRAM - Mobile LPSDR
256Mb (8M x 32)
Parallel
133MHz
15ns
5.4ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
SST25WF040-40-5I-QAE
Microchip Technology

IC FLASH 4MBIT 40MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 60µs
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON
pacchetto: 8-WDFN Exposed Pad
Azione5.456
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
60µs
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON
hot M27C801-90F1
STMicroelectronics

IC EPROM UV 8MBIT 90NS 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 32-CDIP Frit Seal with Window
pacchetto: 32-CDIP (0.600", 15.24mm) Window
Azione6.252
EPROM
EPROM - UV
8Mb (1M x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
32-CDIP (0.600", 15.24mm) Window
32-CDIP Frit Seal with Window
70T3519S166BFG
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
pacchetto: 208-LFBGA
Azione5.088
SRAM
SRAM - Dual Port, Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.6ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
71V65603S100PFGI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione5.456
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
S70FS01GSAGMFV010
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.712
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI - Quad I/O
133MHz
-
-
1.7 V ~ 2 V
-40°C ~ 105°C (TA)
-
-
-
S34ML04G100BHV000
Cypress Semiconductor Corp

IC FLASH 4GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
pacchetto: 63-VFBGA
Azione3.136
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
IS43R86400D-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x13)
pacchetto: 60-TFBGA
Azione4.144
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
166MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x13)
EDB4432BBBJ-1D-F-D
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-WFBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
pacchetto: 134-WFBGA
Azione6.080
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
134-WFBGA
134-FBGA (10x11.5)
W97BH2KBVX2E
Winbond Electronics

IC SDRAM 2GBIT 400MHZ 134VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
pacchetto: 134-VFBGA
Azione7.984
DRAM
SDRAM - Mobile LPDDR2
2Gb (64M x 32)
Parallel
400MHz
15ns
-
1.14 V ~ 1.95 V
-25°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
MT46H16M32LFB5-6 AIT:C TR
Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
pacchetto: 90-VFBGA
Azione3.152
DRAM
SDRAM - Mobile LPDDR
512Mb (16M x 32)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
W98AD6KBGX6E TR
Winbond Electronics

1GB MSDR X16 166MHZ

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.088
-
-
-
-
-
-
-
-
-
-
-
-
SST25LF020A-33-4I-SAE-T
Microchip Technology

IC FLASH 2MBIT 33MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.568
FLASH
FLASH
2Mb (256K x 8)
SPI
33MHz
20µs
-
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S-34C02BI-A8T1U5
SII Semiconductor Corporation

IC EEPROM 2KBIT 400KHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
pacchetto: 8-SMD, Flat Lead Exposed Pad
Azione5.296
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SMD, Flat Lead Exposed Pad
8-DFN (2x3)
RM24C128A-BTAC-T
Adesto Technologies

IC EEPROM 128KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: CBRAM?
  • Technology: CBRAM
  • Memory Size: 128kb (64B Page Size)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 100µs, 50ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.048
CBRAM?
CBRAM
128kb (64B Page Size)
I2C
1MHz
100µs, 50ns
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
S29CD032J0RFAM010
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 80FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (1M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54ns
  • Voltage - Supply: 1.65 V ~ 2.75 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LBGA
  • Supplier Device Package: 80-FBGA (13x11)
pacchetto: 80-LBGA
Azione2.656
FLASH
FLASH - NOR
32Mb (1M x 32)
Parallel
75MHz
60ns
54ns
1.65 V ~ 2.75 V
-40°C ~ 125°C (TA)
Surface Mount
80-LBGA
80-FBGA (13x11)
W632GU8MB15I
Winbond Electronics

IC DRAM 2G PARALLEL 667MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
pacchetto: 78-VFBGA
Azione2.080
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
667MHz
-
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)
hot S29GL032N90TFA043
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione24.000
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
IS61NLP25672-200B1I
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (256K x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 209-BGA
  • Supplier Device Package: 209-LFBGA (14x22)
pacchetto: 209-BGA
Azione3.424
SRAM
SRAM - Synchronous
18Mb (256K x 72)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
209-BGA
209-LFBGA (14x22)
CG7802AA
Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.736
-
-
-
-
-
-
-
-
-
-
-
-
7130SA17TFI
Renesas Electronics Corporation

IC SRAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
pacchetto: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
8Kbit
Parallel
-
17ns
17 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
64-LQFP
64-TQFP (10x10)
MTFC64GASAONS-AIT-ES
Micron Technology Inc.

IC FLASH 512GBIT MMC 153TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gbit
  • Memory Interface: MMC
  • Clock Frequency: 52 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-TFBGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND
512Gbit
MMC
52 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
M10162040054X0ISAY
Renesas Electronics Corporation

IC RAM 16MBIT 54MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 16Mbit
  • Memory Interface: -
  • Clock Frequency: 54 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.71V ~ 2V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
16Mbit
-
54 MHz
-
-
1.71V ~ 2V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
R1EX24512ASAS0I-S1
Renesas Electronics Corporation

EEPROM, 64KX8, SERIAL

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550 ns
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
512Kbit
I2C
1 MHz
5ms
550 ns
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W971GG8NB25I-TR
Winbond Electronics

IC DRAM 1GBIT SSTL 18 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_18
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 57.5 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9.5)
pacchetto: -
Azione7.500
DRAM
SDRAM - DDR2
1Gbit
SSTL_18
400 MHz
15ns
57.5 ns
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
60-VFBGA
60-VFBGA (8x9.5)