Pagina 369 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  369/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
A2C00061862
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.888
-
-
-
-
-
-
-
-
-
-
-
-
IS46LD32320A-3BPLA25-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 1Gb (32M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
pacchetto: 168-VFBGA
Azione2.064
DRAM
SDRAM - Mobile LPDDR2-S4
1Gb (32M x 32)
Parallel
333MHz
15ns
-
1.14 V ~ 1.95 V
-40°C ~ 105°C (TC)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
QMPGL512P11TFI010
Cypress Semiconductor Corp

IC FLASH 512MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione6.944
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
AT25DQ161-MH-T
Adesto Technologies

IC FLASH MEM 16MBIT QUAD 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 7µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
pacchetto: 8-UDFN Exposed Pad
Azione3.120
FLASH
FLASH
16Mb (2M x 8)
SPI
100MHz
7µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
MT47H64M16HR-25E L:G
Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
pacchetto: 84-TFBGA
Azione3.136
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
IDT71V3556S166BQ8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione3.280
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
hot LH28F160S3HNS-TV
Sharp Microelectronics

IC FLASH 16MBIT 100NS 56SSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-SOP (0.524", 13.30mm)
  • Supplier Device Package: 56-SSOP
pacchetto: 56-SOP (0.524", 13.30mm)
Azione10.008
FLASH
FLASH
16Mb (2M x 8, 1M x 16)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-SOP (0.524", 13.30mm)
56-SSOP
AT27C080-15TI
Microchip Technology

IC OTP 8MBIT 150NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione4.208
EPROM
EPROM - OTP
8Mb (1M x 8)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
hot X28HC256J-90
Intersil

IC EEPROM 256KBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
pacchetto: 32-LCC (J-Lead)
Azione30.720
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
5ms
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
AT25256-10PI
Microchip Technology

IC EEPROM 256KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione3.808
EEPROM
EEPROM
256Kb (32K x 8)
SPI
3MHz
5ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT27BV512-90JC
Microchip Technology

IC OTP 512KBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione6.064
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
90ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT28HC256F-12FM/883
Microchip Technology

IC EEPROM 256KBIT 120NS 28FLATPK

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-CFlatPack
  • Supplier Device Package: 28-Flatpack, Ceramic Bottom-Brazed
pacchetto: 28-CFlatPack
Azione7.024
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
120ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Surface Mount
28-CFlatPack
28-Flatpack, Ceramic Bottom-Brazed
IS61QDB24M18A-250B4LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 250MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QUAD
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 1.8ns
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LFBGA (13x15)
pacchetto: 165-LBGA
Azione3.440
SRAM
SRAM - Synchronous, QUAD
72Mb (4M x 18)
Parallel
250MHz
-
1.8ns
1.71 V ~ 1.89 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-LFBGA (13x15)
IS42S83200G-6TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: 54-TSOP (0.400", 10.16mm Width)
Azione6.880
DRAM
SDRAM
256Mb (32M x 8)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS61LV12816L-10TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione5.328
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
CY7C09179V-12AXC
Cypress Semiconductor Corp

IC SRAM 288KBIT 12NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 288Kb (32K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.204
SRAM
SRAM - Dual Port, Synchronous
288Kb (32K x 9)
Parallel
50MHz
-
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot 71V256SA12YG
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
pacchetto: 28-BSOJ (0.300", 7.62mm Width)
Azione4.992
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
CY14V101NA-BA25XI
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 25NS 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x10)
pacchetto: 48-TFBGA
Azione7.920
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (64K x 16)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x10)
24LC01B/W
Microchip Technology

IC EEPROM 1K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 3500ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione5.472
EEPROM
EEPROM
1Kb (128 x 8)
I²C
400kHz
5ms
3500ns
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
MX66U1G45GMJ00
Macronix

IC FLASH SERIAL NOR 1GBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.560
-
-
-
-
-
-
-
-
-
-
-
-
CG8371AA
Cypress Semiconductor Corp

IC SRAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.552
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M32D2DS-046 WT:D
Micron Technology Inc.

IC DRAM LPDDR4 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.408
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
GD55T01GEBIRY
GigaDevice Semiconductor (HK) Limited

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, DTR
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, DTR
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
24CSM01T-E-MS
Microchip Technology

1MBIT 3.4MHZ I2C SERIAL EEPROM,

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 70 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: -
Request a Quote
EEPROM
EEPROM
1Mbit
I2C
1 MHz
5ms
70 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TC)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
IS46DR16320D-25DBA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 512MBIT PARALLEL 84TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400 ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR2
512Mbit
Parallel
400 MHz
15ns
400 ps
1.7V ~ 1.9V
-40°C ~ 105°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
GS8160Z36DGT-333I
GSI Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (20x14)
pacchetto: -
Azione201
SRAM
SRAM - Synchronous, ZBT
18Mbit
Parallel
333 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
100-LQFP
100-TQFP (20x14)
MT62F4DBAM-DC
Micron Technology Inc.

LPDDR5 Y42M

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
W25N01JWZEIT-TR
Winbond Electronics

IC FLASH 1GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
pacchetto: -
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FLASH
FLASH - NAND (SLC)
1Gbit
SPI - Quad I/O, QPI, DTR
166 MHz
700µs
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)