Pagina 2151 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  2.151/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PC28F256G18FE
Micron Technology Inc.

IC FLASH 256MBIT 96NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 96ns
  • Access Time: 96ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (8x10)
pacchetto: 64-TBGA
Azione5.904
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
133MHz
96ns
96ns
1.7 V ~ 2 V
-30°C ~ 85°C (TC)
Surface Mount
64-TBGA
64-EasyBGA (8x10)
MT47H512M4EB-25E:C TR
Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (512M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (9x11.5)
pacchetto: 60-TFBGA
Azione4.336
DRAM
SDRAM - DDR2
2Gb (512M x 4)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-FBGA (9x11.5)
hot AT24C01C-PUM
Microchip Technology

IC EEPROM 1KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione4.016
EEPROM
EEPROM
1Kb (128 x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IDT71V67602S133PF8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione2.608
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IDT71016S15Y8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
pacchetto: 44-BSOJ (0.400", 10.16mm Width)
Azione6.864
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
CY7C0831V-167AXC
Cypress Semiconductor Corp

IC SRAM 2MBIT 167MHZ 120TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 2Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-TQFP (14x14)
pacchetto: 120-LQFP
Azione2.720
SRAM
SRAM - Dual Port, Synchronous
2Mb (128K x 18)
Parallel
167MHz
-
-
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
120-LQFP
120-TQFP (14x14)
W19B320ATB7H
Winbond Electronics

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-TFBGA
Azione3.296
FLASH
FLASH
32Mb (4M x 8, 2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
AT24C32A-10PI-2.7
Microchip Technology

IC EEPROM 32KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione3.232
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
900ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot AT49F001NT-90PC
Microchip Technology

IC FLASH 1MBIT 90NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
pacchetto: 32-DIP (0.600", 15.24mm)
Azione3.888
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
AT24C256N-10SC-2.7
Microchip Technology

IC EEPROM 256KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 550ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.760
EEPROM
EEPROM
256Kb (32K x 8)
I2C
1MHz
10ms
550ns
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT49BV4096A-12RC
Microchip Technology

IC FLASH 4MBIT 120NS 44SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30µs
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.525", 13.34mm Width)
  • Supplier Device Package: 44-SOIC
pacchetto: 44-SOIC (0.525", 13.34mm Width)
Azione5.056
FLASH
FLASH
4Mb (512K x 8, 256K x 16)
Parallel
-
30µs
120ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
44-SOIC (0.525", 13.34mm Width)
44-SOIC
IS62WV20488EBLL-55BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 55NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-TFBGA
Azione7.792
SRAM
SRAM - Asynchronous
16Mb (2M x 8)
Parallel
-
55ns
55ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
71V2556S166PFGI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione2.160
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
S25FL256SAGMFVR00
Cypress Semiconductor Corp

IC FLASH 256MBIT 133MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione3.376
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS42SM16400M-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: 54-TFBGA
Azione7.680
DRAM
SDRAM - Mobile
64Mb (4M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot 24LC64T-E/SN
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione20.904
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
24C02CT-E/MNY
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione5.168
EEPROM
EEPROM
2Kb (256 x 8)
I2C
100kHz
1.5ms
3500ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot 24LC04BT-I/SN
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione684.372
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT41K512M8DA-125:P
Micron Technology Inc.

IC DRAM 4G PARALLEL 800MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.5ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.352
DRAM
SDRAM - DDR3L
4Gb (512M x 8)
Parallel
800MHz
-
13.5ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
-
-
-
MT47H64M8SH-25E AAT:H
Micron Technology Inc.

IC DRAM 512M PARALLEL 400MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x18)
pacchetto: 60-TFBGA
Azione5.232
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 105°C (TA)
Surface Mount
60-TFBGA
60-FBGA (10x18)
MT41K1G8RKB-107:N
Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
pacchetto: 78-TFBGA
Azione2.544
DRAM
SDRAM - DDR3L
8Gb (1G x 8)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
SST25PF040CT-40E/MF
Microchip Technology

2.3V TO 3.6V 4MBIT SPI FLASH 125

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WDFN (5x6)
pacchetto: 8-WDFN Exposed Pad
Azione19.044
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
5ms
-
2.3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WDFN (5x6)
W9864G6KT-6-TR
Winbond Electronics

IC DRAM 64MBIT LVTTL 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: -
Request a Quote
DRAM
SDRAM
64Mbit
LVTTL
166 MHz
-
5 ns
3V ~ 3.6V
0°C ~ 70°C (TC)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
S25HL01GTDPMHA010
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
Azione6.546
FLASH
FLASH - NOR
1Gbit
SPI - Quad I/O, QPI
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
GD5F4GQ4UCYIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 4GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND
4Gbit
SPI - Quad I/O
120 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
CY7C195-15VC
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 24-SOJ
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
15ns
15 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
24-BSOJ (0.300", 7.62mm Width)
24-SOJ
IS25WP064A-JMLE-TY
Vishay Sfernice

IC FLASH 64MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: 7 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
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FLASH
FLASH - NOR
64Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
40µs, 800µs
7 ns
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IME5116SDBETG-75I
Intelligent Memory Ltd.

ECC SDRAM, 512MB, 3.3V, 32MX16,

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: -
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DRAM
SDRAM
512Mbit
LVTTL
133 MHz
15ns
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II