Pagina 2109 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  2.109/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S25FL064P0XNFV000M
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.920
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI - Quad I/O
104MHz
5µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
IS42SM16800H-75BI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: 54-TFBGA
Azione7.552
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot AK6417AM
AKM Semiconductor Inc.

IC EEPROM 16KB SCI SSOP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione12.624
-
-
-
-
-
-
-
-
-
-
-
-
M50FLW080AN5TG TR
Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP (10x20)
pacchetto: 40-TFSOP (0.724", 18.40mm Width)
Azione7.648
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
33MHz
-
250ns
3 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP (10x20)
hot AT25640AN-10SI-2.7
Microchip Technology

IC EEPROM 64KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione56.940
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT27BV512-15JC
Microchip Technology

IC OTP 512KBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione6.048
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
150ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT24C64-10PI-2.5
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione2.640
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
10ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MT40A4G4NRE-075E:B TR
Micron Technology Inc.

IC SDRAM 16GBIT 1.33GHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (4G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x12)
pacchetto: 78-TFBGA
Azione7.952
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x12)
MT29F768G08EEHBBJ4-3RES:B TR
Micron Technology Inc.

IC FLASH 768GBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 768Gb (96G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.600
FLASH
FLASH - NAND
768Gb (96G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT46H64M16LFBF-5 AAT:B TR
Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
pacchetto: 60-VFBGA
Azione5.856
DRAM
SDRAM - Mobile LPDDR
1Gb (64M x 16)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (8x9)
MT48LC8M16A2B4-6A AIT:L
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
pacchetto: 54-VFBGA
Azione7.840
DRAM
SDRAM
128Mb (8M x 16)
Parallel
167MHz
12ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
CY62128EV30LL-45ZXA
Cypress Semiconductor Corp

IC SRAM 1MBIT 45NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione3.520
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
S25FL256SDPNFB003
Cypress Semiconductor Corp

IC FLASH 256MBIT 66MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: 8-WDFN Exposed Pad
Azione5.536
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
66MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
NAND512R3A2SZAXE
Micron Technology Inc.

IC FLASH 512MBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-TFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
pacchetto: 63-TFBGA
Azione7.280
FLASH
FLASH - NAND
512Mb (64M x 8)
Parallel
-
50ns
50ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
63-TFBGA
63-VFBGA (9x11)
24VL024/MS
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.5 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione4.800
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.5 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot M24C04-RMN6P
STMicroelectronics

IC EEPROM 4KBIT 400KHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione8.532
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
S26KL128SDABHM030
Cypress Semiconductor Corp

IC 128 MEG

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 96ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
pacchetto: 24-VBGA
Azione6.672
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
100MHz
-
96ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
MT53D1024M64D8NW-062 WT:D
Micron Technology Inc.

IC DRAM 64G 1600MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 64Gb (1G x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.296
DRAM
SDRAM - Mobile LPDDR4
64Gb (1G x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT29F2G16ABBGAH4-AATES:G
Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.872
-
-
-
-
-
-
-
-
-
-
-
-
CY62256NLL-70SNXC
Alliance Memory, Inc.

256K LP SRAM 32KX8 4.5-5.5V 28PI

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione8.472
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
MT55L512Y36PF-10
Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous, ZBT
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous, ZBT
18Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MX25U3232FZBI02
Macronix

IC FLASH 32MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 40µs, 3ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
pacchetto: -
Azione40.722
FLASH
FLASH - NOR
32Mbit
SPI - Quad I/O, QPI
133 MHz
40µs, 3ms
-
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-USON (4x3)
R1EX24064ATA00I-S0
Renesas Electronics Corporation

EEPROM, 8KX8, SERIAL

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
W25N512GWEIT
Winbond Electronics

IC FLASH 512MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 7 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (SLC)
512Mbit
SPI - Quad I/O
104 MHz
700µs
7 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
CY7C0830AV-133AC
Cypress Semiconductor Corp

IC SRAM 1.152MBIT PAR 120TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.152Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-TQFP (14x14)
pacchetto: -
Request a Quote
SRAM
SRAM - Dual Port, Synchronous
1.152Mbit
Parallel
133 MHz
-
-
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
120-LQFP
120-TQFP (14x14)
CAT93C56PI-FB
Catalyst Semiconductor Inc.

IC EEPROM 2KBIT MICROWIRE 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
-
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
M34F04-WMN6P
STMicroelectronics

IC EEPROM 4KBIT I2C 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 400 kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
4Kbit
I2C
400 kHz
5ms
900 ns
2.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SMJ61CD16SA-70JDM
Texas Instruments

STANDARD SRAM, 16KX1

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
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