Pagina 2069 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  2.069/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MT47H128M8SH-187E:M
Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 350ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
pacchetto: 60-TFBGA
Azione6.928
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
533MHz
15ns
350ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
MT41K256M16HA-125 M AIT:E TR
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
pacchetto: 96-TFBGA
Azione5.808
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
N25Q256A33EF840E
Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 8VPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (64M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFPN (MLP8) (8x6)
pacchetto: 8-VDFN Exposed Pad
Azione4.016
FLASH
FLASH - NOR
256Mb (64M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VDFPN (MLP8) (8x6)
STK14CA8-RF45
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
pacchetto: 48-BSSOP (0.295", 7.50mm Width)
Azione3.392
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
CY7C1362C-250AJXCT
Cypress Semiconductor Corp

IC SRAM 9MBIT 250MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.8ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione2.176
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
250MHz
-
2.8ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
AT49F002N-90TC
Microchip Technology

IC FLASH 2MBIT 90NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione3.168
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
hot AT28C256-15PI
Microchip Technology

IC EEPROM 256KBIT 150NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
pacchetto: 28-DIP (0.600", 15.24mm)
Azione14.880
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
7024S35J
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
pacchetto: 84-LCC (J-Lead)
Azione2.128
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
CY7C1024DV33-10BGXIT
Cypress Semiconductor Corp

IC SRAM 3MBIT 10NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 3Mb (128K x 24)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione4.480
SRAM
SRAM - Asynchronous
3Mb (128K x 24)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
MTFC4GLGDQ-AIT Z TR
Micron Technology Inc.

IC FLASH 32GBIT 100LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.016
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CY14B256PA-SFXIT
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 40MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione4.272
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
CY14ME064J2A-SXI
Cypress Semiconductor Corp

IC NVSRAM 64KBIT 3.4MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 3.4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.520
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
I2C
3.4MHz
-
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MT29F4G08ABBEAH4:E
Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
pacchetto: 63-VFBGA
Azione3.632
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
-
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
hot 6116SA20SOG8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 20NS 24SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
pacchetto: 24-SOIC (0.295", 7.50mm Width)
Azione12.420
SRAM
SRAM - Asynchronous
16Kb (2K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
hot IS61LV25616AL-10TI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione191.088
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
NM27C010V120
ON Semiconductor

IC EPROM 1M PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (14x11.46)
pacchetto: 32-LCC (J-Lead)
Azione3.904
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (14x11.46)
AS4C64M16D2A-25BAN
Alliance Memory, Inc.

IC DRAM 1G PARALLEL 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
pacchetto: 84-TFBGA
Azione2.176
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 105°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
S29GL064N90BFA043
Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.736
-
-
-
-
-
-
-
-
-
-
-
-
S29GL064N90FFI013
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
pacchetto: 64-LBGA
Azione6.720
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
hot MT29F4T08EUHAFM4-3T:A
Micron Technology Inc.

IC FLASH 4T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Tb (512G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.184
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT53D4DBNW-DC TR
Micron Technology Inc.

IC DRAM LPDDR4 SMD

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.736
-
-
-
-
-
-
-
-
-
-
-
-
MT29F1T08EEHAFJ4-3R:A
Micron Technology Inc.

IC FLASH 1T PARALLEL 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.944
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
-
GD25Q32EWIGR
GigaDevice Semiconductor (HK) Limited

32MBIT, 3.3V, WSON8 6*5MM, INDUS

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 70µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
pacchetto: -
Azione7.338
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O
133 MHz
70µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
MX25V16066M2J02
Macronix

MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
THGBMHG9C8LBAU8
Kioxia America, Inc.

IC FLASH 64GBIT EMMC 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND
64Gbit
eMMC
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MT53E768M64D4HJ-046-AIT-B-TR
Micron Technology Inc.

LPDDR4 48G 768MX64 FBGA QDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 48Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-WFBGA (12.4x12.4)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
48Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
556-TFBGA
556-WFBGA (12.4x12.4)
MT55V512V32PF-10
Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - ZBT
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: -
Request a Quote
SRAM
SRAM - ZBT
18Mbit
Parallel
100 MHz
-
5 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT62F768M32D2DS-023-WT-C
Micron Technology Inc.

LPDDR5 24GBIT 32 315/315 TFBGA 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 24Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 315-TFBGA
  • Supplier Device Package: 315-TFBGA (12.4x15)
pacchetto: -
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DRAM
SDRAM - Mobile LPDDR5X
24Gbit
LVSTL
4.266 GHz
-
-
1.01V ~ 1.12V
-25°C ~ 85°C (TC)
Surface Mount
315-TFBGA
315-TFBGA (12.4x15)