Pagina 1620 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.620/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DSQ3301-K04+TW
Maxim Integrated

IC EEPROM 512BIT 1WIRE

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.904
-
-
-
-
-
-
-
-
-
-
-
-
AT28HC256E-70TU
Microchip Technology

IC EEPROM 256KBIT 70NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
pacchetto: 28-TSSOP (0.465", 11.80mm Width)
Azione4.864
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
IDT71P72804S250BQG
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 250MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.3ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione3.616
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
250MHz
-
6.3ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IS62WV5128BLL-55T2I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.400", 10.16mm Width)
  • Supplier Device Package: 32-TSOP II
pacchetto: 32-SOIC (0.400", 10.16mm Width)
Azione2.848
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
55ns
55ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.400", 10.16mm Width)
32-TSOP II
7006L35J8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 35NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
pacchetto: 68-LCC (J-Lead)
Azione2.672
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
S29PL127J70BAW023
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.640
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-25°C ~ 85°C (TA)
-
-
-
IS42S16800F-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: 54-TFBGA
Azione5.984
DRAM
SDRAM
128Mb (8M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
24LC256T-I/MF
Microchip Technology

IC EEPROM 256KBIT 400KHZ 8DFNS

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-S (6x5)
pacchetto: 8-VDFN Exposed Pad
Azione7.136
EEPROM
EEPROM
256Kb (32K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-S (6x5)
24LC02B-E/P
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione2.448
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
CAT24C16HU4I-GT3JN
ON Semiconductor

IC EEPROM 16KBIT 400KHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN-EP (2x3)
pacchetto: 8-UFDFN Exposed Pad
Azione7.072
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN-EP (2x3)
M24C04-DRDW8TP/K
STMicroelectronics

IC EEPROM 4KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 450ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione5.552
EEPROM
EEPROM
4Kb (512 x 8)
I2C
1MHz
4ms
450ns
1.8 V ~ 5.5 V
-40°C ~ 105°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CY7C1021BN-15ZSXE
Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione8.652
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
FT24C04A-UNR-T
Fremont Micro Devices USA

IC EEPROM 4KBIT 1MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione28.236
EEPROM
EEPROM
4Kb (512 x 8)
I2C
1MHz
5ms
550ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-DFN (2x3)
FT24C32A-UDR-B
Fremont Micro Devices USA

IC EEPROM 32KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 800kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 700ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione18.912
EEPROM
EEPROM
32Kb (4K x 8)
I2C
800kHz
5ms
700ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
DS2431+T&R
Maxim Integrated

IC EEPROM 1KBIT 1WIRE TO92-3

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione31.194
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BR93H66RF-WCE2
Rohm Semiconductor

EEPROMS MICROWIRE SERIAL BUS, HI

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 1.25MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione21.396
EEPROM
EEPROM
4Kb (256 x 16)
SPI
1.25MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
X28HC256J-90
Renesas Electronics America

IC EEPROM 256K PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
pacchetto: 32-LCC (J-Lead)
Azione3.312
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
5ms
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
W631GU6MB-11
Winbond Electronics

IC SDRAM 1GBIT 933MHZ 96BGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.904
-
-
-
-
-
-
-
-
-
-
-
-
S25FL064P0XMFB003
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione5.568
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI - Quad I/O
104MHz
5µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
MX25V4035FZUI
Macronix

IC FLASH 4MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.544
-
-
-
-
-
-
-
-
-
-
-
-
MT29F512G08CMCEBJ4-37ITRES:E TR
Micron Technology Inc.

MLC 512G 64GX8 VBGA IT QDP L05B

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.184
-
-
-
-
-
-
-
-
-
-
-
-
MT29RZ4B2DZZHHTB-18I.80F TR
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.864
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
-
-
-
MT41K128M16JT-107 AAT:K
Micron Technology Inc.

IC SDRAM DDR3L 2GB 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
pacchetto: 96-TFBGA
Azione4.176
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
AT24C64D-XPD-T
Microchip Technology

400KHZ AUTO TEMP 8-TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione6.768
EEPROM
EEPROM
64Kb (8K x 8)
I²C
400kHz
5ms
900ns
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
UPD46365184BF1-E33Y-EQ1-A
Renesas Electronics Corporation

QDR SRAM, 2MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CG8613AA
Infineon Technologies

IC USB PERIPHERAL FULL SPEED

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT58L128V32P1T-10
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
pacchetto: -
Request a Quote
SRAM
SRAM
4Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
CY7C199CN-12VXAKJT
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ