Pagina 1400 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.400/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MT47H64M8CF-25E IT:G TR
Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
pacchetto: 60-TFBGA
Azione19.044
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
hot SST39WF800A-90-4C-B3KE
Microchip Technology

IC FLASH 8MBIT 90NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 90ns
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
pacchetto: 48-TFBGA
Azione37.668
FLASH
FLASH
8Mb (512K x 16)
Parallel
-
40µs
90ns
1.65 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
hot IDT71V124SA20YI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
pacchetto: 32-BSOJ (0.400", 10.16mm Width)
Azione4.704
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
IS61LF102436A-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione5.232
SRAM
SRAM - Synchronous
36Mb (1M x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
hot DS2506S+
Maxim Integrated

IC OTP 64KBIT 1WIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 64Kb (64K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.209", 5.30mm Width)
Azione4.896
EPROM
EPROM - OTP
64Kb (64K x 1)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SO
MT46V64M8BN-6:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x12.5)
pacchetto: 60-TFBGA
Azione6.912
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
167MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-FBGA (10x12.5)
hot AT27C512R-70JI
Microchip Technology

IC OTP 512KBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione5.040
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
MT53B384M64D4EZ-062 WT ES:B TR
Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gb (384M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.488
DRAM
SDRAM - Mobile LPDDR4
24Gb (384M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
AS7C38096A-10BINTR
Alliance Memory, Inc.

IC SRAM 8MBIT 10NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-LFBGA
Azione4.944
SRAM
SRAM - Asynchronous
8Mb (1M x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-TFBGA (6x8)
71421LA55J
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
pacchetto: 52-LCC (J-Lead)
Azione7.024
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
S25FL512SAGBHIA13
Cypress Semiconductor Corp

IC FLASH 512MBIT 133MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
pacchetto: 24-TBGA
Azione5.904
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
M29W128GH70ZA3E
Micron Technology Inc.

IC FLASH 128MBIT 70NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8, 8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
pacchetto: 64-TBGA
Azione6.032
FLASH
FLASH - NOR
128Mb (16M x 8, 8M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
hot MX25U8035EM2I-10G
Macronix

IC FLASH 8MBIT 104MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 30µs, 3ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.209", 5.30mm Width)
Azione119.940
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI
104MHz
30µs, 3ms
-
1.65 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP
25AA160DT-E/SN
Microchip Technology

IC EEPROM 16KBIT 10MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.208
EEPROM
EEPROM
16Kb (2K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT25TE001-SSHN-T
Adesto Technologies

SERIAL FLASH, 1MBIT, 1.65V-3.6V

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 64-VFQFN Exposed Pad
  • Supplier Device Package: 64-QFN (9x9)
pacchetto: 64-VFQFN Exposed Pad
Azione3.408
-
-
-
-
-
-
-
-
-
Surface Mount
64-VFQFN Exposed Pad
64-QFN (9x9)
IS66WVE2M16ECLL-70BLI
ISSI, Integrated Silicon Solution Inc

IC PSRAM 32MBIT 70NS 48BGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: 48-TFBGA
Azione9.804
PSRAM
PSRAM (Pseudo SRAM)
32Mb (2M x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
MT53B384M32D2DS-062 XT:B
Micron Technology Inc.

IC DRAM 12G 1600MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.520
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
IS43TR16128C-107MBLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 195ps
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: 96-TFBGA
Azione7.872
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
933MHz
15ns
195ps
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MT53B1G32D4NQ-062 WT:D TR
Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.816
-
-
-
-
-
-
-
-
-
-
-
-
MT53B2DADS-DC TR
Micron Technology Inc.

IC SDRAM LPDDR4 16GBIT 256MX64 F

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.456
DRAM
SDRAM - Mobile LPDDR4
-
-
-
-
-
-
-
-
-
-
AT24C32D-SSPD-T
Microchip Technology

400KHZ AUTO GRADE 8-SOIC-N

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.752
EEPROM
EEPROM
32Kb (4K x 8)
I²C
1MHz
5ms
900ns
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MTFC512GBCAXHL-WT-TR
Micron Technology Inc.

UFS 4T

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
X28HC64SIZ-12T1
Renesas Electronics Corporation

8K X 8 EEPROM,HIGH SPEED,CMOS,28

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: -
Request a Quote
EEPROM
EEPROM
64Kbit
Parallel
-
5ms
120 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
W25Q128JWYIR-TR
Winbond Electronics

IC FLASH 128MBIT SPI 21WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 21-XFBGA, WLCSP
  • Supplier Device Package: 21-WLCSP
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
133 MHz
3ms
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
21-XFBGA, WLCSP
21-WLCSP
MT58L512L18FS-8-5
Micron Technology Inc.

IC SRAM 8MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
pacchetto: -
Request a Quote
SRAM
SRAM - Standard
8Mbit
Parallel
100 MHz
-
8.5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
R1LV0416DSB-7LI-B0
Renesas Electronics Corporation

IC SRAM 4MBIT PARALLEL 44TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: -
Request a Quote
SRAM
SRAM
4Mbit
Parallel
-
70ns
70 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S25FL256SAGBHB213
Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 750µs
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O
133 MHz
750µs
6.5 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
BR93G66FVT-3BGE2
Rohm Semiconductor

IC EEPROM 4KBIT MICROWIRE 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
pacchetto: -
Azione9.000
EEPROM
EEPROM
4Kbit
Microwire
3 MHz
5ms
-
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B