Pagina 1337 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.337/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
R1EX25002ATA00I#S0
Renesas Electronics America

IC EEPROM 2KBIT 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.224
EEPROM
EEPROM
2Kb (256 x 8)
SPI
5MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT24C32D-SSHM-B
Microchip Technology

IC EEPROM 32KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.568
EEPROM
EEPROM
32Kb (4K x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY7C1518KV18-300BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione2.752
SRAM
SRAM - Synchronous, DDR II
72Mb (4M x 18)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
IDT71V2556S100PF8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione7.824
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot STK14C88-NF25ITR
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 25NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 32-SOIC
pacchetto: 32-SOIC (0.295", 7.50mm Width)
Azione75.768
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.295", 7.50mm Width)
32-SOIC
CY62157DV30LL-55BVXAT
Cypress Semiconductor Corp

IC SRAM 8MBIT 55NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: 48-VFBGA
Azione4.288
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
55ns
55ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
hot M29F400BT70N1
Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione15.300
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT25320W-10SC-2.7
Microchip Technology

IC EEPROM 32KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.816
EEPROM
EEPROM
32Kb (4K x 8)
SPI
3MHz
5ms
-
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS61VF204836B-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
pacchetto: 100-LQFP
Azione3.872
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
117MHz
-
7.5ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
70V3399S166BF8
IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 166MHZ 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 2Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
pacchetto: 208-LFBGA
Azione4.080
SRAM
SRAM - Dual Port, Synchronous
2Mb (128K x 18)
Parallel
166MHz
-
3.6ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
7164S85TDB
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 85NS 28CDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 28-CDIP
pacchetto: 28-CDIP (0.300", 7.62mm)
Azione2.624
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
85ns
85ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
28-CDIP (0.300", 7.62mm)
28-CDIP
71V67703S80BGG8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione4.128
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
100MHz
-
8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
hot IS45S32400F-7TLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
pacchetto: 86-TFSOP (0.400", 10.16mm Width)
Azione4.336
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
93LC46BT-I/MNY
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
pacchetto: 8-WFDFN Exposed Pad
Azione4.208
EEPROM
EEPROM
1Kb (64 x 16)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot BU9883FV-WE2
Rohm Semiconductor

IC EEPROM 6KBIT 400KHZ 16SSOPB

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 6Kb (256 x 8 x 3)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 3 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOPB
pacchetto: 16-LSSOP (0.173", 4.40mm Width)
Azione8.232
EEPROM
EEPROM
6Kb (256 x 8 x 3)
I2C
400kHz
5ms
-
3 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
16-LSSOP (0.173", 4.40mm Width)
16-SSOPB
X28HC256JI-90R5699
Renesas Electronics America

IC EEPROM 256K PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
pacchetto: 32-LCC (J-Lead)
Azione5.568
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
5ms
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
11AA040-I/WF16K
Microchip Technology

IC EEPROM 4K SINGLE WIRE 100KHZ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione4.816
EEPROM
EEPROM
4Kb (512 x 8)
Single Wire
100kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
W25Q80JVSVIQ
Winbond Electronics

IC FLASH 8M SPI 133MHZ 8VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.224
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI
133MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CY7C1041G30-10ZSXIT
Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 44TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione6.624
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MT53B1G32D4NQ-062 WT:D
Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.880
-
-
-
-
-
-
-
-
-
-
-
-
MT29F4G01ABBFD12-AATES:F TR
Micron Technology Inc.

IC FLASH 4G SPI TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (4G x 1)
  • Memory Interface: SPI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.816
FLASH
FLASH - NAND
4Gb (4G x 1)
SPI
-
-
-
1.7 V ~ 1.95 V
-40°C ~ 105°C (TC)
-
-
-
MT53E512M64D4NK-053 WT:D TR
Micron Technology Inc.

IC DRAM LPDDR4 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.688
-
-
-
-
-
-
-
-
-
-
-
-
DS28CN01U-W0E+1T
Maxim Integrated

IC POWER MANAGEMENT

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.62V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-µMAX
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione4.496
EEPROM
EEPROM
1Kb (128 x 8)
I²C
400kHz
10ms
-
1.62V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-µMAX
R1Q3A7236ABB-33IB0
Renesas

STANDARD SRAM, 2MX36, 0.45NS, CM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S72XS256RE0AHBH13
Cypress Semiconductor Corp

MEMORY CIRCUIT, FLASH+SDRAM, 16M

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
Parallel
108 MHz
-
-
1.7V ~ 1.95V
-
-
-
-
MT53D384M32D2DS-046-AUT-E
Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
12Gbit
-
2.133 GHz
-
-
1.1V
-40°C ~ 125°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
W25Q16JVZPJM-TR
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O
133 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
W77Q32JWSSIQ-TR
Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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FLASH
FLASH
32Mbit
SPI - Quad I/O, QPI
104 MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC