Pagina 1134 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.134/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42RM32400G-75BI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione2.176
DRAM
SDRAM - Mobile
128Mb (4M x 32)
Parallel
133MHz
-
6ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
BK58F0095HVX010A
Micron Technology Inc.

NOR FLASH 256MX32 PLASTIC PBF TF

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.536
-
-
-
-
-
-
-
-
-
-
-
-
W9816G6IB-6
Winbond Electronics

IC SDRAM 16MBIT 166MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-VFBGA (6.4x10.10)
pacchetto: 60-TFBGA
Azione5.520
DRAM
SDRAM
16Mb (1M x 16)
Parallel
166MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-VFBGA (6.4x10.10)
IDT71V67602S133BQ
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione4.832
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
CY7C1318CV18-200BZXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione5.440
SRAM
SRAM - Synchronous, DDR II
18Mb (1M x 18)
Parallel
200MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
MT47H64M8B6-3 IT:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 333MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA
pacchetto: 60-FBGA
Azione5.920
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
60-FBGA
60-FBGA
MT46V64M16P-6T:A TR
Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
pacchetto: 66-TSSOP (0.400", 10.16mm Width)
Azione7.568
DRAM
SDRAM - DDR
1Gb (64M x 16)
Parallel
167MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
AT25128A-10TI-1.8
Microchip Technology

IC EEPROM 128KBIT 20MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.792
EEPROM
EEPROM
128Kb (16K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot CY7C4122KV13-106FCXC
Cypress Semiconductor Corp

IC SRAM 144MBIT 1066MHZ 361FCBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR IV
  • Memory Size: 144Mb (8M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 1066MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.26 V ~ 1.34 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 361-BBGA, FCBGA
  • Supplier Device Package: 361-FCBGA (21x21)
pacchetto: 361-BBGA, FCBGA
Azione5.344
SRAM
SRAM - Synchronous, QDR IV
144Mb (8M x 18)
Parallel
1066MHz
-
-
1.26 V ~ 1.34 V
0°C ~ 70°C (TA)
Surface Mount
361-BBGA, FCBGA
361-FCBGA (21x21)
IS61DDB22M18C-250M3L
ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.4ns
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LFBGA (15x17)
pacchetto: 165-LBGA
Azione7.632
SRAM
SRAM - Synchronous, DDR II
36Mb (2M x 18)
Parallel
250MHz
-
8.4ns
1.71 V ~ 1.89 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-LFBGA (15x17)
7006S20PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione7.648
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
CY62146GE30-45ZSXIT
Cypress Semiconductor Corp

MICROPOWER SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.904
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
W632GG6KB12I TR
Winbond Electronics

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-WBGA (9x13)
pacchetto: 96-TFBGA
Azione6.000
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
-
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-WBGA (9x13)
AS6C2008-55TINTR
Alliance Memory, Inc.

IC SRAM 2MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
pacchetto: 32-TFSOP (0.724", 18.40mm Width)
Azione4.896
SRAM
SRAM - Asynchronous
2Mb (256K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
MT25QL128ABA1EW9-0SIT TR
Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 8WPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 8ms, 2.8ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WPDFN (6x8) (MLP8)
pacchetto: 8-WDFN Exposed Pad
Azione3.696
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
133MHz
8ms, 2.8ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WPDFN (6x8) (MLP8)
S26KS256SDABHA030
Cypress Semiconductor Corp

FLASH MEMORY NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 96ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
pacchetto: 24-VBGA
Azione6.444
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
100MHz
-
96ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
AS6C6264-55SIN
Alliance Memory, Inc.

IC SRAM 64KBIT 55NS 28SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.330", 8.38mm Width)
  • Supplier Device Package: 28-SOP
pacchetto: 28-SOIC (0.330", 8.38mm Width)
Azione8.724
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-SOIC (0.330", 8.38mm Width)
28-SOP
MTFC256GBAOANAM-WT
Micron Technology Inc.

IC FLASH 2T MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.160
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MX66L1G45GXDI-08G
Macronix

IC FLASH SERIAL NOR 1G 24CSP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.464
-
-
-
-
-
-
-
-
-
-
-
-
S29GL064S80FHV020
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
pacchetto: 64-LBGA
Azione7.088
FLASH
FLASH - NOR
64Mb (4M x 16)
Parallel
-
60ns
80ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
IS46DR81280B-3DBLA1
ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (8x10.5)
pacchetto: 60-TFBGA
Azione7.296
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (8x10.5)
70V05S25PFI
IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione4.224
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT29F512G08EBHBFJ4-R:B
Micron Technology Inc.

IC FLASH NAND 512G PAR 132VBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.968
-
-
-
-
-
-
-
-
-
-
-
-
MT53E512M32D1ZW-046-AUT-B-TR
Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
16Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 125°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT62F1536M64D8CL-026-WT-B
Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA 8DP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
3.2 GHz
-
-
-
-
-
-
-
GD25WD05CTIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Kbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
512Kbit
SPI - Quad I/O
100 MHz
-
-
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MB85RC04PNF-G-JNE1
Fujitsu Semiconductor Memory Solution

IC FRAM 4KBIT I2C 400KHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 400 kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 900 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
FRAM
FRAM (Ferroelectric RAM)
4Kbit
I2C
400 kHz
-
900 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
GS81302DT20GE-500I
GSI Technology Inc.

IC SRAM 144MBIT PAR 165FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 144Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 500 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FPBGA (15x17)
pacchetto: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
144Mbit
Parallel
500 MHz
-
-
1.7V ~ 1.9V
-40°C ~ 100°C (TJ)
Surface Mount
165-LBGA
165-FPBGA (15x17)