Pagina 1117 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.117/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT41K2G8KJR-125:A
Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.5ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9.5x13)
pacchetto: 78-TFBGA
Azione6.016
DRAM
SDRAM - DDR3L
16Gb (2G x 8)
Parallel
800MHz
-
13.5ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9.5x13)
IS25LQ020A-JDLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 80MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 400µs
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.616
FLASH
FLASH - NOR
2Mb (256K x 8)
SPI - Quad I/O
80MHz
400µs
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot M29W128GH60ZA6E
Micron Technology Inc.

IC FLASH 128MBIT 60NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8, 8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
pacchetto: 64-TBGA
Azione31.200
FLASH
FLASH - NOR
128Mb (16M x 8, 8M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
hot AT25DF641-S3H-B
Adesto Technologies

IC FLASH 64MBIT 100MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (256 Bytes x 32K pages)
  • Memory Interface: SPI
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 7µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.295", 7.50mm Width)
Azione5.632
FLASH
FLASH
64Mb (256 Bytes x 32K pages)
SPI
100MHz
7µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IDT71V3559SA80BG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione6.128
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
-
-
8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
hot RC28F640P33B85A
Micron Technology Inc.

IC FLASH 64MBIT 85NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (8x10)
pacchetto: 64-TBGA
Azione5.600
FLASH
FLASH - NOR
64Mb (4M x 16)
Parallel
52MHz
85ns
85ns
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
64-TBGA
64-EasyBGA (8x10)
hot CY7C1314BV18-250BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione4.880
SRAM
SRAM - Synchronous, QDR II
18Mb (512K x 36)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
CY7C1021CV33-10BAXIT
Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 48FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (7x7)
pacchetto: 48-TFBGA
Azione5.664
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (7x7)
CY7C0852V-167AXC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT 167MHZ 176TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-TQFP (24x24)
pacchetto: 176-LQFP
Azione3.232
SRAM
SRAM - Dual Port, Synchronous
4.5Mb (128K x 36)
Parallel
167MHz
-
-
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
176-LQFP
176-TQFP (24x24)
MT46V16M16FG-75:F TR
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA (8x14)
pacchetto: 60-FBGA
Azione3.328
DRAM
SDRAM - DDR
256Mb (16M x 16)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-FBGA
60-FBGA (8x14)
IS49RL18320-107BL
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 933MHZ 168BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (32M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 10ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FC(LF)BGA (13.5x13.5)
pacchetto: 168-LBGA
Azione2.608
DRAM
DRAM
576Mb (32M x 18)
Parallel
933MHz
-
10ns
1.28 V ~ 1.42 V
0°C ~ 70°C (TA)
Surface Mount
168-LBGA
168-FC(LF)BGA (13.5x13.5)
7008S25PF8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 25NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione3.616
SRAM
SRAM - Dual Port, Asynchronous
512Kb (64K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V67603S166BQG8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione2.544
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
71421LA55J8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
pacchetto: 52-LCC (J-Lead)
Azione7.280
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
MT25TL256HBA8ESF-0AAT TR
Micron Technology Inc.

SERIAL NOR SLC 32MX8 SOIC DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.368
-
-
-
-
-
-
-
-
-
-
-
-
W971GG8SB-25 TR
Winbond Electronics

IC SDRAM 1GBIT 400MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-WBGA (8x12.5)
pacchetto: 60-TFBGA
Azione4.432
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
200MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-TFBGA
60-WBGA (8x12.5)
BU9844GUL-WE2
Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ VCSP50L1

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, CSPBGA
  • Supplier Device Package: VCSP50L1
pacchetto: 6-UFBGA, CSPBGA
Azione4.512
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
6-UFBGA, CSPBGA
VCSP50L1
93AA86C-I/P
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8, 1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione6.072
EEPROM
EEPROM
16Kb (2K x 8, 1K x 16)
SPI
3MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT45DB321E-MHF2B-T
Adesto Technologies

IC FLASH 32MBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (512 Bytes x 8192 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
pacchetto: 8-UDFN Exposed Pad
Azione2.416
FLASH
FLASH
32Mb (512 Bytes x 8192 pages)
SPI
85MHz
8µs, 4ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
SST39VF3201-70-4I-B3KE
Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
pacchetto: 48-TFBGA
Azione10.788
FLASH
FLASH
32Mb (2M x 16)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
MT53D1G64D8NW-053 WT ES:E TR
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.096
-
-
-
-
-
-
-
-
-
-
-
-
MT53D8D1AJS-DC
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.312
-
-
-
-
-
-
-
-
-
-
-
-
CG8606AAT
Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.048
-
-
-
-
-
-
-
-
-
-
-
-
SM662PEE-BEST
Silicon Motion, Inc.

IC FLASH 2TBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 2Tbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (TLC)
2Tbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)
MT53E512M32D1ZW-046-WT-B-TR
Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
16Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-25°C ~ 85°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
M5M5V108DKV-70H-BT
Renesas Electronics Corporation

SRAM 1M-BIT (128K X 8)

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT62F2G32D4DS-026-WT-C
Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400N-5BL
ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PARALLEL 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.8 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: -
Request a Quote
DRAM
SDRAM
64Mbit
LVTTL
200 MHz
-
4.8 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)