Pagina 1089 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.089/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDFB164A1MA-JD-F-R TR
Micron Technology Inc.

LPDDR3 512MX64 PLASTIC GREEN WFB

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.512
-
-
-
-
-
-
-
-
-
-
-
-
N25Q008A11EF640F TR
Micron Technology Inc.

IC FLASH NOR 2MX4 VPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.456
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI
108MHz
8ms, 5ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
-
-
-
CY14B104N-BA20XIT
Cypress Semiconductor Corp

IC NVSRAM 4MBIT 20NS 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x10)
pacchetto: 48-TFBGA
Azione4.176
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (256K x 16)
Parallel
-
20ns
20ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x10)
M25P16-VME6TG TR
Micron Technology Inc.

IC FLASH 16MBIT 75MHZ 8VFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFPN (MLP8) (8x6)
pacchetto: 8-VDFN Exposed Pad
Azione6.208
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VDFPN (MLP8) (8x6)
MT48V8M16LFF4-8 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
pacchetto: 54-VFBGA
Azione3.760
DRAM
SDRAM - Mobile LPSDR
128Mb (8M x 16)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
hot AT28LV010-20JI
Microchip Technology

IC EEPROM 1MBIT 200NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 200ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione20.256
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
200ns
3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
IS42VM32160E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione2.816
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS43DR86400C-3DBLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (10.5x8)
pacchetto: 60-TFBGA
Azione3.744
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (10.5x8)
AT28C256F-15SU
Microchip Technology

IC EEPROM 256KBIT 150NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione6.128
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
hot JS28F512M29EWLA
Micron Technology Inc.

IC FLASH 512MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8, 32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione33.420
FLASH
FLASH - NOR
512Mb (64M x 8, 32M x 16)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
AS7C32096A-15TCN
Alliance Memory, Inc.

IC SRAM 2MBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione6.080
SRAM
SRAM - Asynchronous
2Mb (256K x 8)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot BR9020RFV-WE2
Rohm Semiconductor

IC EEPROM 2KBIT 1MHZ 8SSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SSOPB
pacchetto: 8-LSSOP (0.173", 4.40mm Width)
Azione1.274.400
EEPROM
EEPROM
2Kb (128 x 16)
SPI
2MHz
10ms
-
2 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-LSSOP (0.173", 4.40mm Width)
8-SSOPB
93AA86A-I/SN
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.496
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
93AA76AT-I/SN
Microchip Technology

IC EEPROM 8KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.488
EEPROM
EEPROM
8Kb (1K x 8)
SPI
3MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SST39SF010A-70-4C-NHE-T
Microchip Technology

IC FLASH 1MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
pacchetto: 32-LCC (J-Lead)
Azione2.880
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
20µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC
CY7C2263KV18-550BZXC
Cypress Semiconductor Corp

IC SRAM 36MBIT 550MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 550MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione5.824
SRAM
SRAM - Synchronous, QDR II+
36Mb (2M x 18)
Parallel
550MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
hot 24AA02E48-I/SN
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione18.756
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AS7C4096A-12JIN
Alliance Memory, Inc.

IC SRAM 4MBIT 12NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
pacchetto: 36-BSOJ (0.400", 10.16mm Width)
Azione14.484
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
IS43TR16128D-125KBL
ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: 96-TFBGA
Azione6.516
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
MT62F4G32D8DV-023-IT-B-TR
Micron Technology Inc.

LPDDR5 128G 4GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 128Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
128Gbit
Parallel
4.266 GHz
-
-
-
-40°C ~ 95°C
-
-
-
IS43TR16640CL-125JBLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
24FC16-E-MS
Microchip Technology

IC EEPROM 16KBIT I2C 1MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: -
Azione2.469
EEPROM
EEPROM
16Kbit
I2C
1 MHz
5ms
450 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
FM93C66LZEMT8
Fairchild Semiconductor

IC EEPROM 4KBIT MICROWIRE 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 250 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: -
Request a Quote
EEPROM
EEPROM
4Kbit
Microwire
250 kHz
15ms
-
2.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
W631GG6NB09I
Winbond Electronics

IC DRAM 1GBIT SSTL 15 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
pacchetto: -
Azione594
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
1.066 GHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
IS43LD32128C-18BPLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46TR16640C-125JBLA25-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 115°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 115°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS29GL256-70FLEB-TR
ISSI, Integrated Silicon Solution Inc

256Mb, 64 Ball BGA(11X13mm), 3V,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns, 200µs
  • Access Time: 70 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-LFBGA (11x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
CFI
-
70ns, 200µs
70 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
64-LBGA
64-LFBGA (11x13)
IS43TR16256A-093NBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
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DRAM
SDRAM - DDR3
4Gbit
Parallel
1.066 GHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)