Pagina 1054 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  1.054/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SST39VF400A-70-4C-C1QE
Microchip Technology

IC FLASH 4MBIT 70NS 48XFLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-UFLGA
  • Supplier Device Package: 48-XFLGA (6x4)
pacchetto: 48-UFLGA
Azione5.424
FLASH
FLASH
4Mb (256K x 16)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-UFLGA
48-XFLGA (6x4)
IDT71V3579S85PFI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione4.240
SRAM
SRAM - Synchronous
4.5Mb (256K x 18)
Parallel
-
-
8.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot AT24C256B-TH-T
Microchip Technology

IC EEPROM 256KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione156.048
EEPROM
EEPROM
256Kb (32K x 8)
I2C
1MHz
5ms
550ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IS42S32800B-6BI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: 90-TFBGA
Azione10.152
DRAM
SDRAM
256Mb (8M x 32)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
AT49F001T-70PC
Microchip Technology

IC FLASH 1MBIT 70NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
pacchetto: 32-DIP (0.600", 15.24mm)
Azione5.232
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
AT27BV010-15VC
Microchip Technology

IC OTP 1MBIT 150NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
pacchetto: 32-TFSOP (0.488", 12.40mm Width)
Azione3.184
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
150ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
CY7C1525KV18-333BZXC
Cypress Semiconductor Corp

IC SRAM 72MBIT 333MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (8M x 9)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione7.536
SRAM
SRAM - Synchronous, QDR II
72Mb (8M x 9)
Parallel
333MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
IS61LPS409618B-200TQLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
pacchetto: 100-LQFP
Azione7.232
SRAM
SRAM - Synchronous
72Mb (4M x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
70V25S15PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione7.376
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
70V25L20PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione3.568
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
7035L20PF8
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.768
SRAM
SRAM - Dual Port, Asynchronous
144Kb (8K x 18)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
EDB2432B4MA-1DAAT-F-D
Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ 134VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
pacchetto: 134-VFBGA
Azione5.392
DRAM
SDRAM - Mobile LPDDR2
2Gb (64M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-40°C ~ 105°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
IS61LPS12836A-200TQLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione3.152
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
S29GL512T13TFNV23
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 130ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.712
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
130ns
1.65 V ~ 3.6 V
-40°C ~ 125°C (TA)
-
-
-
CAT25M01LI-G
ON Semiconductor

IC EEPROM 1MBIT 10MHZ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.944
EEPROM
EEPROM
1Mb (128K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
-
-
-
MT29F1G08ABAEAWP-ITX:E TR
Micron Technology Inc.

IC FLASH 1GBIT 20NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: 48-TFSOP (0.724", 18.40mm Width)
Azione2.176
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
AS4C16M16D2-25BCNTR
Alliance Memory, Inc.

IC SDRAM 256MBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TFBGA (12.5x8)
pacchetto: 84-TFBGA
Azione7.200
DRAM
SDRAM - DDR2
256Mb (16M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-TFBGA (12.5x8)
24AA04T-I/MC
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
pacchetto: 8-VFDFN Exposed Pad
Azione7.824
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
M24C01-RMN6P
STMicroelectronics

IC EEPROM 1KBIT 400KHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.520
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
93C86C-I/P
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8, 1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione7.224
EEPROM
EEPROM
16Kb (2K x 8, 1K x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
CY7S1041G30-10BVXI
Cypress Semiconductor Corp

IC SRAM 4MB 10NS 44BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
pacchetto: 48-VFBGA
Azione8.280
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
BR93L86FJ-WE2
Rohm Semiconductor

IC EEPROM 16KBIT 2MHZ 8SOP-J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.040
EEPROM
EEPROM
16Kb (1K x 16)
SPI
2MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
M95640-DFCT6TP/K
STMicroelectronics

IC EEPROM 64KBIT 10MHZ 8WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP
pacchetto: 8-XFBGA, WLCSP
Azione22.716
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-XFBGA, WLCSP
8-WLCSP
hot IS61WV5128BLL-10TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione129.972
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
24AA512SC-I/S22K
Microchip Technology

IC EEPROM 512K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione3.040
EEPROM
EEPROM
512Kb (64K x 8)
I²C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
S29GL01GT11FHB020
Cypress Semiconductor Corp

IC 1 GB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
pacchetto: 64-LBGA
Azione3.136
-
-
-
-
-
-
-
-
-
Surface Mount
64-LBGA
64-FBGA (13x11)
70V06L45PF8
IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
pacchetto: 64-LQFP
Azione4.000
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
45ns
45ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT53E768M32D2FW-046-WT-ES-C
Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA 2

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  • Voltage - Supply: -
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  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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