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Prodotti Infineon Technologies

Record 16.988
Pagina  482/607
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Numero di parte
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pacchetto
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hot IRF7521D1TRPBF
Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione247.128
hot IRLR3715ZTR
Infineon Technologies

MOSFET N-CH 20V 49A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione28.764
IRLR3715TR
Infineon Technologies

MOSFET N-CH 20V 54A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.536
hot IRFB3307PBF
Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.480
IPW60R040C7XKSA1
Infineon Technologies

MOSFET N-CH 600V 50A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.816
PTFA240451E V1 R250
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.48GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
pacchetto: 2-Flatpack, Fin Leads
Azione7.152
PTFB211803ELV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
pacchetto: H-33288-6
Azione4.352
BAT6804WH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 8V 130MA SOT323

  • Diode Type: Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione47.634
hot IRU1010-33CD
Infineon Technologies

IC REG LINEAR 3.3V 1A DPAK

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.856
TLE72792EV50XUMA1
Infineon Technologies

IC REG LINEAR 5V 180MA 14SSOP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 180mA
  • Current - Output: 180mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 36µA
  • PSRR: 60dB (100Hz)
  • Control Features: Enable, Reset
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-SSOP-14-EP
pacchetto: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Azione5.280
IPS1041RTRRPBF
Infineon Technologies

IC SWITCH IPS 1CH LOW SIDE DPAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 28V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.2A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.752
IRSM836-035MA
Infineon Technologies

IC MOTOR DRIVER PAR 36-PQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: AC, Synchronous
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (3)
  • Interface: Parallel
  • Technology: UMOS
  • Step Resolution: -
  • Applications: Appliance
  • Current - Output: 3A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 400V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 36-PowerVQFN
  • Supplier Device Package: 36-PQFN (12x12)
pacchetto: 36-PowerVQFN
Azione14.316
PEB 3264 F V1.4
Infineon Technologies

IC VOICE ACCESS CODEC TQFP64

  • Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
  • Interface: IOM-2, PCM
  • Number of Circuits: 2
  • Voltage - Supply: 3.3V
  • Current - Supply: 105mA
  • Power (Watts): -
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: P-TQFP-64
pacchetto: 64-LQFP
Azione5.008
TC1130L100EBGBBFXUMA1
Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 100MHz
  • Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART, USB
  • Peripherals: DMA, POR, PWM, WDT
  • Number of I/O: 72
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 144K x 8
  • Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
  • Data Converters: -
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 208-LBGA
  • Supplier Device Package: P-LBGA-208-2
pacchetto: 208-LBGA
Azione3.200
BTM7751GXUMA1
Infineon Technologies

IC BRIDGE DRIVER PAR 28DSO

  • Output Configuration: Half Bridge (2)
  • Applications: DC Motors, General Purpose
  • Interface: Logic
  • Load Type: Inductive
  • Technology: DMOS
  • Rds On (Typ): 45 mOhm LS, 70 mOhm HS
  • Current - Output / Channel: -
  • Current - Peak Output: 14A
  • Voltage - Supply: 1.8 V ~ 42 V
  • Voltage - Load: 1.8 V ~ 42 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Status Flag
  • Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-28
pacchetto: 28-SOIC (0.295", 7.50mm Width)
Azione22.356
S29GL064S90BHI030
Infineon Technologies

IC FLASH 64MBIT PARALLEL 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
pacchetto: -
Request a Quote
CY9AF114LPMC-G-MJE1
Infineon Technologies

IC MM MCU 64LQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
D4810N28TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.8KV 4810A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 4810A
  • Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Request a Quote
FP100R07N3E4BOSA1
Infineon Technologies

IGBT MOD 650V 100A 335W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 335 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione30
S25HS512TFANHI010
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: -
Azione7.635
SLE-66C84PE-MFC5-8
Infineon Technologies

IC SECURITY CTRLR 16BIT MFC5.8

  • Applications: -
  • Core Processor: -
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: -
  • Number of I/O: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: S-MFC5.8-8-1
  • Supplier Device Package: S-MFC5.8-8
pacchetto: -
Request a Quote
TLE4287G
Infineon Technologies

IC REG LINEAR FIXED STNDRD REG

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 2.5V @ 200mA
  • Current - Output: 250mA
  • Current - Quiescent (Iq): 5 mA
  • Current - Supply (Max): -
  • PSRR: 55dB (100Hz)
  • Control Features: Enable, Hold, Reset
  • Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
pacchetto: -
Request a Quote
IAUT260N10S5N019ATMA1
Infineon Technologies

MOSFET N-CH 100V 260A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione10.731
CYPM1111-40LQXIT
Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 17
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 12K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
pacchetto: -
Request a Quote
BTS114AE3045A
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO220-3-5
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
SPA21N50C3XKSA1
Infineon Technologies

HIGH POWER_LEGACY

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 560 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
AIDW30E60
Infineon Technologies

DIODE GEN PURP 600V 30A TO247-3

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
99326-02831
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote