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Infineon Technologies |
TRANSISTOR NPN DOUBLE 45V SOT143
- Transistor Type: 2 NPN, Base Collector Junction
- Applications: Current Mirror
- Voltage - Rated: 30V
- Current Rating: 100mA
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143-4
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pacchetto: TO-253-4, TO-253AA |
Azione3.888 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.232 |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.224 |
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Infineon Technologies |
MOSFET N-CH 75V 130A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.104 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.008 |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.904 |
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Infineon Technologies |
MOSFET N-CH 40V 9A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.200 |
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Infineon Technologies |
MOSFET N-CH 500V 9A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.272 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione120.720 |
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Infineon Technologies |
MOSFET N-CH 650V 23A HSOF-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 141W (Tc)
- Rds On (Max) @ Id, Vgs: 102 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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pacchetto: 8-PowerSFN |
Azione7.584 |
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Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: 150°C (Max)
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione281.166 |
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Infineon Technologies |
IC VREF SHUNT ADJ 8SOIC
- Reference Type: Shunt
- Output Type: Adjustable
- Voltage - Output (Min/Fixed): 1.24V
- Voltage - Output (Max): 15V
- Current - Output: 10mA
- Tolerance: ±0.5%
- Temperature Coefficient: -
- Noise - 0.1Hz to 10Hz: -
- Noise - 10Hz to 10kHz: -
- Voltage - Input: -
- Current - Supply: -
- Current - Cathode: 80µA
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.384 |
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Infineon Technologies |
IC MCU 16BIT 192KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 192KB (192K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 24K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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pacchetto: 64-LQFP |
Azione3.696 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 128TQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: EBI/EMI, I2C, SLDM, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 93
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 10K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 12x10b
- Oscillator Type: Internal
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (20x20)
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pacchetto: 128-LQFP |
Azione7.040 |
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Infineon Technologies |
IC RELAY PHOTOVO 300V 50MA 8-SMD
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 160 Ohm
- Load Current: 50mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 300 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
- Supplier Device Package: 8-SMT Modified
- Relay Type: Relay
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pacchetto: 8-SMD (0.300", 7.62mm) 4 Leads |
Azione31.464 |
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Infineon Technologies |
IC REG BUCK 40VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione4.784 |
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Infineon Technologies |
LED LIGHTING
- Type: AC DC Offline Switcher
- Topology: Flyback
- Internal Switch(s): Yes
- Number of Outputs: 2
- Voltage - Supply (Min): -
- Voltage - Supply (Max): 24V
- Voltage - Output: -
- Current - Output / Channel: -
- Frequency: 66MHz
- Dimming: PWM
- Applications: LED Lighting
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-16
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pacchetto: 16-SOIC (0.154", 3.90mm Width) |
Azione6.640 |
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Infineon Technologies |
HIGH POWER THYR / DIO BG-T7626K0
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
- Peripherals: DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 66
- Program Memory Size: 96KB (96K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
- Data Converters: A/D 17x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-LQFP (12x12)
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 256KB 100LQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC MM MCU 64LQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 2.0625MB FLSH 100QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 78
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 57x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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pacchetto: - |
Azione2.700 |
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Infineon Technologies |
IC PSOC4
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Request a Quote |
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Infineon Technologies |
IFX PRIMARION CNTRLLER
- Applications: Controller, Intel VR13
- Voltage - Input: 0.25V ~ 12V
- Number of Outputs: 2
- Voltage - Output: 0.25V ~ 3.04V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-63
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pacchetto: - |
Azione6.414 |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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pacchetto: - |
Azione5.286 |
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Infineon Technologies |
SCR MODULE 1800V 900A MODULE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 500 A
- Current - On State (It (RMS)) (Max): 900 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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pacchetto: - |
Request a Quote |
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