Prodotti Infineon Technologies

IRGS4B60KD1TRRP

Infineon Technologies

IGBT 600V 11A 63W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF6617TR1PBF

Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? ST
• Package / Case: DirectFET? Isometric ST

pacchetto: DirectFET? Isometric ST

IRFR13N20DTRR

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP100N08S2L07AKSA1

Infineon Technologies

MOSFET N-CH 75V 100A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

pacchetto: TO-220-3

AUIRLZ24NSTRL

Infineon Technologies

MOSFET N-CH 55V D2-PAK AUTO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR1010ZTRLPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF9530NSPBF

Infineon Technologies

MOSFET P-CH 100V 14A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSC018NE2LSI

Infineon Technologies

MOSFET N-CH 25V 29A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

IPD60R600P6ATMA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

BSC067N06LS3GATMA1

Infineon Technologies

MOSFET N-CH 60V 50A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

TLE82632EXUMA1

Infineon Technologies

IC SYSTEM BASIS CHIP DSO-36

• Type: Transceiver
• Applications: Automotive
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

pacchetto: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad

IR3566BMTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 48QFN

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (6x6)

pacchetto: 48-VFQFN Exposed Pad

IFX54211MBV33HTMA1

Infineon Technologies

IC REG LINEAR 3.3V 150MA SCT595

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.57V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 75µA ~ 200µA
• PSRR: 63dB (10kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT-595

pacchetto: 6-SMD (5 Leads), Gull Wing

IRS2008SPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 70ns, 30ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TLE4984CX2SF47HAMA1

Infineon Technologies

SPEED SENSORS 3SSO

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TLE4917HTSA1

Infineon Technologies

MAGNETIC SWITCH OMNIPOLAR 6TSOP

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±7mT Trip, ±2.2mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.4 V ~ 5.5 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 2mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

pacchetto: SOT-23-6 Thin, TSOT-23-6

TLE7230RAUMA1

Infineon Technologies

IC SW SMART OCTAL LOWSIDE PDSO36

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): 800 mOhm
• Input Type: -
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

pacchetto: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

FZ1200R12HE4PHPSA1

Infineon Technologies

IGBT MODULE 1200V 1825A

• IGBT Type: Trench Field Stop
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 1825 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1200A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 74 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

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IRLML2402TR

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3™/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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S25HL02GTDPBHB053

Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (8x8)

pacchetto: -

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IAUCN04S7N020ATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

pacchetto: -

S6J335EKBESE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
• Peripherals: DMA, LVD, LVR, POR, PWM, WDT
• Number of I/O: 208
• Program Memory Size: 4.16MB (4.16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-LQFP Exposed Pad
• Supplier Device Package: 208-TEQFP (28x28)

pacchetto: -

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63-7000PBF

Infineon Technologies

IGBT 650V COPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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CY9AFA41MBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 96KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

pacchetto: -

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TT170N14KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 350A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 223 A
• Current - On State (It (RMS)) (Max): 350 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: -

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TD500N12KOFHPSA2

Infineon Technologies

SCR MODULE 1800V 900A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 500 A
• Current - On State (It (RMS)) (Max): 900 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: -

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IPLK60R600PFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 7A THIN-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-52
• Package / Case: 8-PowerTDFN

pacchetto: -

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2EDN7524RXTMA1

Infineon Technologies

DRIVER IC PG-TSSOP-8

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4.5V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.98V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 5.3ns, 4.5ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: PG-TSSOP-8

pacchetto: -