Pagina 342 - Prodotti Infineon Technologies

Numero di parte	Produttore	Descrizione	pacchetto	Azione
IRF9410TR	Infineon Technologies	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione97.908
IRF9520NL	Infineon Technologies	MOSFET P-CH 100V 6.8A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione39.528
AUIRF1405ZS-7TRL	Infineon Technologies	MOSFET N-CH 55V 120A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Azione6.976
BSC0702LSATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.736
IPA90R1K2C3	Infineon Technologies	MOSFET N-CH 900V 5.1A 10-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione22.872
IRF7756GTRPBF	Infineon Technologies	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione5.488
BC 818K-25 E6327	Infineon Technologies	TRANS NPN 25V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.304
BCR523E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 0.33W SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione574.188
BAR 63-02W H6433	Infineon Technologies	DIODE RF SW 50V 100MA SCD80 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 100mA Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1 Ohm @ 10mA, 100MHz Power Dissipation (Max): 250mW Operating Temperature: 150°C (TJ) Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	pacchetto: SC-80	Azione4.800
TLE6368R	Infineon Technologies	IC PS SYSTEM MULTI VOLT PDSO-36 Applications: Power Supply, Automotive Applications Voltage - Input: 5.5 V ~ 60 V Number of Outputs: 3 Voltage - Output: 2.6V, 3.3V, 5V Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: PG-DSO-36	pacchetto: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad	Azione421.620
IFX8117MEVHTMA1	Infineon Technologies	IC REG LIN POS ADJ 1A SOT223-4 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 15V Voltage - Output (Min/Fixed): 1.25V Voltage - Output (Max): 13.8V Voltage Dropout (Max): 1.25V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 5mA PSRR: 75dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	pacchetto: TO-261-4, TO-261AA	Azione3.936
IRU1010-33CDTR	Infineon Technologies	IC REG LINEAR 3.3V 1A DPAK Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 7V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.3V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione4.688
TLE4250GHTSA1	Infineon Technologies	IC REG LIN POS ADJ 50MA SCT595-5 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): Tracking Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 10mA Current - Output: 50mA Current - Quiescent (Iq): - Current - Supply (Max): 20µA ~ 3mA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Gull Wing Supplier Device Package: PG-SCT595-5	pacchetto: 6-SMD (5 Leads), Gull Wing	Azione26.004
IR2110-1	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 14-DIP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 3.3 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 500V Rise / Fall Time (Typ): 25ns, 17ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads Supplier Device Package: 14-PDIP	pacchetto: 14-DIP (0.300", 7.62mm), 13 Leads	Azione3.808
IRS2109SPBF	Infineon Technologies	IC HALF BRIDGE DRIVER 8-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione8.124
PEB 4266 V V1.2	Infineon Technologies	IC SLIC VOICE ACCESS VQFN-48 Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Number of Circuits: 2 Voltage - Supply: 5V Current - Supply: 60mA, 90mA Power (Watts): - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: P-VQFN-48-4	pacchetto: 48-VFQFN Exposed Pad	Azione5.520
SAF-XC164SM-16F40F BA	Infineon Technologies	IC MCU 16BIT 128KB FLASH 64LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 20MHz Connectivity: SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 47 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 14x8/10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	pacchetto: 64-LQFP	Azione5.712
XMC4500F100F1024ACXQMA1	Infineon Technologies	IC MCU 32BIT 1MB FLASH 100LQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 120MHz Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 55 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 160K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 24x12b, D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-11	pacchetto: 100-LQFP Exposed Pad	Azione4.736
CY9AF114NABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 256KB FLASH 112BGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	pacchetto: -	Request a Quote
TLE9185QXV33XUMA1	Infineon Technologies	BLDC_DRIVER_IC PG-VQFN-48 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Speed Output Configuration: Pre-Driver - Half Bridge (3) Interface: PWM, SPI Technology: NMOS Step Resolution: - Applications: - Current - Output: 250mA Voltage - Supply: 6V ~ 28V Voltage - Load: 3V ~ 28V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-29	pacchetto: -	Azione27.975
BSZ0909LSATMA1	Infineon Technologies	MOSFET N-CH 30V 19A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione14.352
FF450R12KE7HPSA1	Infineon Technologies	MEDIUM POWER 62MM IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione30
ISZ034N06LM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 19A/112A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-26 Package / Case: 8-PowerTDFN	pacchetto: -	Azione18.780
CY9AF315NABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 384KB FLASH 112BGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 384KB (384K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	pacchetto: -	Request a Quote
IAUCN04S7L009ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 275A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	pacchetto: -	Azione3.000
CYT2BL8CAAQ1AZEGSTHUYA1	Infineon Technologies	TRAVEO-2 BODY ENTRYLEVEL Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 152 Program Memory Size: 4.063MB (4.063M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 512K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 82x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Supplier Device Package: 176-LQFP (24x24)	pacchetto: -	Request a Quote
CY62157G30-45ZXI	Infineon Technologies	IC SRAM 8MBIT PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	pacchetto: -	Request a Quote
CY95F564KPFT-G-UNCGE2	Infineon Technologies	IC MCU 8BIT 20KB FLASH 20TSSOP Core Processor: F²MC-8FX Core Size: 8-Bit Speed: 16.25MHz Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Number of I/O: 15 Program Memory Size: 20KB (20K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 496 x 8 Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Data Converters: A/D 6x8/10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	pacchetto: -	Azione16.800

IRF9410TR

Infineon Technologies

MOSFET N-CH 30V 7A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione97.908

IRF9520NL

Infineon Technologies

MOSFET P-CH 100V 6.8A TO-262

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione39.528

AUIRF1405ZS-7TRL

Infineon Technologies

MOSFET N-CH 55V 120A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Azione6.976

BSC0702LSATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.736

IPA90R1K2C3

Infineon Technologies

MOSFET N-CH 900V 5.1A 10-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione22.872

IRF7756GTRPBF

Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione5.488

BC 818K-25 E6327

Infineon Technologies

TRANS NPN 25V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.304

BCR523E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione574.188

BAR 63-02W H6433

Infineon Technologies

DIODE RF SW 50V 100MA SCD80

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

pacchetto: SC-80

Azione4.800

TLE6368R

Infineon Technologies

IC PS SYSTEM MULTI VOLT PDSO-36

Applications: Power Supply, Automotive Applications
Voltage - Input: 5.5 V ~ 60 V
Number of Outputs: 3
Voltage - Output: 2.6V, 3.3V, 5V
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package: PG-DSO-36

pacchetto: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

Azione421.620

IFX8117MEVHTMA1

Infineon Technologies

IC REG LIN POS ADJ 1A SOT223-4

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 15V
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 13.8V
Voltage Dropout (Max): 1.25V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 5mA
PSRR: 75dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

Azione3.936

IRU1010-33CDTR

Infineon Technologies

IC REG LINEAR 3.3V 1A DPAK

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 7V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.3V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione4.688

TLE4250GHTSA1

Infineon Technologies

IC REG LIN POS ADJ 50MA SCT595-5

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 10mA
Current - Output: 50mA
Current - Quiescent (Iq): -
Current - Supply (Max): 20µA ~ 3mA
PSRR: 60dB (100Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Gull Wing
Supplier Device Package: PG-SCT595-5

pacchetto: 6-SMD (5 Leads), Gull Wing

Azione26.004

IR2110-1

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-DIP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 3.3 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500V
Rise / Fall Time (Typ): 25ns, 17ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package: 14-PDIP

pacchetto: 14-DIP (0.300", 7.62mm), 13 Leads

Azione3.808

IRS2109SPBF

Infineon Technologies

IC HALF BRIDGE DRIVER 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione8.124

PEB 4266 V V1.2

Infineon Technologies

IC SLIC VOICE ACCESS VQFN-48

Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Number of Circuits: 2
Voltage - Supply: 5V
Current - Supply: 60mA, 90mA
Power (Watts): -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: P-VQFN-48-4

pacchetto: 48-VFQFN Exposed Pad

Azione5.520

SAF-XC164SM-16F40F BA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 64LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 20MHz
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
Data Converters: A/D 14x8/10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

pacchetto: 64-LQFP

Azione5.712

XMC4500F100F1024ACXQMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 100LQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 120MHz
Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 55
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 160K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 24x12b, D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-11

pacchetto: 100-LQFP Exposed Pad

Azione4.736

CY9AF114NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 112BGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

pacchetto: -

Request a Quote

TLE9185QXV33XUMA1

Infineon Technologies

BLDC_DRIVER_IC PG-VQFN-48

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Speed
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: PWM, SPI
Technology: NMOS
Step Resolution: -
Applications: -
Current - Output: 250mA
Voltage - Supply: 6V ~ 28V
Voltage - Load: 3V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-29

pacchetto: -

Azione27.975

BSZ0909LSATMA1

Infineon Technologies

MOSFET N-CH 30V 19A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione14.352

FF450R12KE7HPSA1

Infineon Technologies

MEDIUM POWER 62MM

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione30

ISZ034N06LM5ATMA1

Infineon Technologies

MOSFET N-CH 60V 19A/112A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-26
Package / Case: 8-PowerTDFN

pacchetto: -

Azione18.780

CY9AF315NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 384KB FLASH 112BGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 384KB (384K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

pacchetto: -

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IAUCN04S7L009ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 129W (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

pacchetto: -

Azione3.000

CYT2BL8CAAQ1AZEGSTHUYA1

Infineon Technologies

TRAVEO-2 BODY ENTRYLEVEL

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 152
Program Memory Size: 4.063MB (4.063M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 512K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 82x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Supplier Device Package: 176-LQFP (24x24)

pacchetto: -

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CY62157G30-45ZXI

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

pacchetto: -

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CY95F564KPFT-G-UNCGE2

Infineon Technologies

IC MCU 8BIT 20KB FLASH 20TSSOP

Core Processor: F²MC-8FX
Core Size: 8-Bit
Speed: 16.25MHz
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 15
Program Memory Size: 20KB (20K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 496 x 8
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Data Converters: A/D 6x8/10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

pacchetto: -

Azione16.800