Prodotti Infineon Technologies

SKB15N60ATMA1

Infineon Technologies

IGBT 600V 31A 139W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 62A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 139W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 76nC
• Td (on/off) @ 25°C: 32ns/234ns
• Test Condition: 400V, 15A, 21 Ohm, 15V
• Reverse Recovery Time (trr): 279ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD530N15N3GBTMA1

Infineon Technologies

MOSFET N-CH 150V 21A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFB4310GPBF

Infineon Technologies

MOSFET N-CH 100V 130A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IRF6604TR1

Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MQ
• Package / Case: DirectFET? Isometric MQ

pacchetto: DirectFET? Isometric MQ

SPP02N60S5HKSA1

Infineon Technologies

MOSFET N-CH 600V 1.8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

pacchetto: TO-220-3

SPB77N06S2-12

Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 93µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 158W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB100N08S2-07

Infineon Technologies

MOSFET N-CH 75V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB100N03S2L-03

Infineon Technologies

MOSFET N-CH 30V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPL60R185C7AUMA1

Infineon Technologies

MOSFET N-CH 600V 13A 4VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 260µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 77W (Tc)
• Rds On (Max) @ Id, Vgs: 185 mOhm @ 5.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-VSON-4
• Package / Case: 4-PowerTSFN

pacchetto: 4-PowerTSFN

IPD50N04S308ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP023NE7N3 G

Infineon Technologies

MOSFET N-CH 75V 120A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 273µA
• Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

pacchetto: TO-220-3

PTFB213004FV2R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 18dB
• Voltage - Test: 30V
• Current Rating: -
• Noise Figure: -
• Current - Test: 2.4A
• Power - Output: 60W
• Voltage - Rated: 65V
• Package / Case: H-37275-6/2
• Supplier Device Package: H-37275-6/2

pacchetto: H-37275-6/2

BC860BWH6327XTSA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

pacchetto: SC-70, SOT-323

IDW24G65C5BXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 24A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 12A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 190µA @ 650V
• Capacitance @ Vr, F: 360pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-3

ISP752T

Infineon Technologies

IC SWITCH HISIDE SMART 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 52 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.3A
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

pacchetto: 8-SOIC (0.154", 3.90mm Width)

XMC4800F100F1536AAXQMA1

Infineon Technologies

IC MCU 32BIT 1.5MB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 75
• Program Memory Size: 1.5MB (1.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 276K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 24x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-25

pacchetto: 100-LQFP Exposed Pad

TLE49641KXTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 18mT Trip, 12.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 32 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 170°C (TJ)
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

DD89N16KKHPSA1

Infineon Technologies

DIODE MOD GP 1600V 89A POWRBLOK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io) (per Diode): 89A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Chassis Mount
• Package / Case: POW-R-BLOK™ Module
• Supplier Device Package: POW-R-BLOK™ Module

pacchetto: -

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MB15A01PFV1-G-BND-ERE1

Infineon Technologies

IC SYNTHESIZER 16SSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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6MS24017P43W39872NOSA1

Infineon Technologies

IGBT MODULE 1700V 1100A

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 1100 A
• Power - Max: 14500 W
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -25°C ~ 55°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

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CY15V116QN-40BKXIT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI
• Clock Frequency: 40 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 9 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

pacchetto: -

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PEB8191HDV1-1

Infineon Technologies

INTELLIGENT NTC-Q NETWORK TERMI

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

Request a Quote

IRSM515-025PATRAUMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 1.5A SOP23

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic, PWM
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 3Ohm LS, 3Ohm HS
• Current - Output / Channel: 1.5A
• Current - Peak Output: -
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 23-PowerSMD Module
• Supplier Device Package: PG-DIP-23-901/SOP 29x12F

pacchetto: -

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IMZA75R060M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

pacchetto: -

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CY8C4247LTI-L445

Infineon Technologies

IC MCU 32BIT 128KB FLASH 68QFN

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LVD, POR, PWM, SmartSense, WDT
• Number of I/O: 57
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

pacchetto: -

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IPW60R160C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 23.8A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 750µA
• Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 176W (Tc)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

pacchetto: -

TLE73683EXUMA3

Infineon Technologies

OPTIREG PMIC

• Applications: Power Supply, Automotive Applications
• Voltage - Input: 4.5V ~ 45V
• Number of Outputs: 3
• Voltage - Output: 5V, 3.3V/2.6V, 1.3V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

pacchetto: -

IPP330P10NMAKSA1

Infineon Technologies

TRENCH >=100V PG-TO220-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 5.55mA
• Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

pacchetto: -