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Prodotti Infineon Technologies

Record 16.988
Pagina  294/607
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
AUIRGSL4062D1
Infineon Technologies

IGBT 600V 59A 246W TO-262

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 59A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 246W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione5.600
hot IRF3711PBF
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione385.836
IRF3709ZL
Infineon Technologies

MOSFET N-CH 30V 87A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione7.920
IRF7453TR
Infineon Technologies

MOSFET N-CH 250V 2.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.944
hot IRF7453
Infineon Technologies

MOSFET N-CH 250V 2.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione24.000
IRF3706STRL
Infineon Technologies

MOSFET N-CH 20V 77A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.088
AUIRFS8407TRL
Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.736
IPN60R1K0CEATMA1
Infineon Technologies

CONSUMER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione7.312
IPA80R1K4CEXKSA2
Infineon Technologies

MOSFET NCH 800V 3.9A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione20.712
hot IRF6618TRPBF
Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MT
  • Package / Case: DirectFET? Isometric MT
pacchetto: DirectFET? Isometric MT
Azione18.948
hot IR3092MTR
Infineon Technologies

IC CONTROLLER 2PHASE 48-MLPQ

  • Applications: VID Voltage Programmer
  • Voltage - Input: -
  • Voltage - Supply: 7.3 V ~ 21 V
  • Current - Supply: 29mA
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-MLPQ (7x7)
pacchetto: 48-VFQFN Exposed Pad
Azione12.540
hot IPS021
Infineon Technologies

IC MOSFET LS DRIVER 5A TO-220AB

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 35V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.8A
  • Rds On (Typ): 130 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione48.912
TLF35584QKVS1XUMA2
Infineon Technologies

DC/DC CONVERTER

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.904
XMC4104Q48K64ABXUMA1
Infineon Technologies

IC MCU 32BIT 48KB FLASH 48VQFN

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 80MHz
  • Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 21
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 20K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 9x12b; D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-53
pacchetto: 48-VFQFN Exposed Pad
Azione3.648
TLE9254VSKXUMA1
Infineon Technologies

IC TRANSCEIVER HALF 2/2 DSO-14

  • Type: Transceiver
  • Protocol: CANbus
  • Number of Drivers/Receivers: 2/2
  • Duplex: Half
  • Receiver Hysteresis: 50 mV
  • Data Rate: 5Mbps
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
pacchetto: -
Request a Quote
BTG70502EPLXUMA1
Infineon Technologies

PROFET

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 2.7V ~ 28V
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
  • Current - Output (Max): 3A
  • Rds On (Typ): 50mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14
pacchetto: -
Azione7.284
XDPS2201XUMA1
Infineon Technologies

XDP DIGITAL POWER HYBRID FLYBACK

  • Output Type: Transistor Driver
  • Function: Step-Up/Step-Down
  • Output Configuration: Positive
  • Topology: Flyback
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 11V ~ 24V
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: No
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Current Limit, Enable, Soft Start
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
pacchetto: -
Azione8.577
SIDC161D170HX1SA2
Infineon Technologies

DIODE GP 1.7KV 300A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
IS26KS256S-DPBLE00TR
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
S29PL064J70BFW072
Infineon Technologies

IC FLASH 64MBIT PARALLEL 56FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-FBGA (9x7)
pacchetto: -
Request a Quote
CY8C4146LQS-S453
Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 34
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 40-UFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
pacchetto: -
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BAT63-07WE6327
Infineon Technologies

MIXER DIODE, LOW BARRIER

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 3V
  • Current - Max: 100 mA
  • Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100 mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: -
Request a Quote
TT320N16SOFTIMHPSA1
Infineon Technologies

LT-BOND MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 320 A
  • Current - On State (It (RMS)) (Max): 520 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
  • Current - Hold (Ih) (Max): 150 mA
  • Operating Temperature: 130°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
pacchetto: -
Request a Quote
ETD580N16P60HPSA1
Infineon Technologies

SCR MODULE 1.6KV 700A MODULE

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 586 A
  • Current - On State (It (RMS)) (Max): 700 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 135°C (TC)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
pacchetto: -
Request a Quote
IPC60R190P6X7SA1
Infineon Technologies

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
IS26KL256S-DABLA100
Infineon Technologies

INFINEON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: HyperFlash
  • Memory Size: 256Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 96 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-VFBGA (6x8)
pacchetto: -
Request a Quote
TLD60981EPXUMA2
Infineon Technologies

LITIX POWER BOOST CONTROLLER

  • Type: DC DC Controller
  • Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
  • Internal Switch(s): No
  • Number of Outputs: 1
  • Voltage - Supply (Min): 4.5V
  • Voltage - Supply (Max): 58V
  • Voltage - Output: 0V ~ 70V
  • Current - Output / Channel: 3mA
  • Frequency: 100kHz ~ 500kHz
  • Dimming: PWM
  • Applications: Lighting
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14
pacchetto: -
Azione7.989
IPP039N10N5XKSA1
Infineon Technologies

MV POWER MOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote