Prodotti Infineon Technologies

IPD50R280CEATMA1

Infineon Technologies

MOSFET N-CH 500V 13A PG-TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 350µA
• Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 119W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF3205ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

64-2042

Infineon Technologies

MOSFET N-CH 40V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 220W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF5806

Infineon Technologies

MOSFET P-CH 20V 4A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro6?(TSOP-6)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

IRFS23N15D

Infineon Technologies

MOSFET N-CH 150V 23A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRF2804L

Infineon Technologies

MOSFET N-CH 40V 195A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IPA65R150CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34.7W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

AUIRF7343Q

Infineon Technologies

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC

IRF7907PBF

Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
• Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

BFP405E6327BTSA1

Infineon Technologies

TRANS NPN RF 4.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

pacchetto: SC-82A, SOT-343

BAS7007WH6327XTSA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT343

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

pacchetto: SC-82A, SOT-343

IRU1150CSTR

Infineon Technologies

IC REG LINEAR POS ADJ 4A 8SOIC

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 5.5V
• Voltage Dropout (Max): 1.2V @ 4A
• Current - Output: 4A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

IR11671ASPBF

Infineon Technologies

IC FET DRIVER EXTERNAL

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

IRS2112SPBF

Infineon Technologies

IC DRIVER HI/LOW SIDE 16-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 75ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.295", 7.50mm Width)

SFH 757

Infineon Technologies

TRANSMITTER DIODE FIBER OPTIC

• Wavelength: 650nm
• Spectral Bandwidth: 25nm
• Voltage - Forward (Vf) (Typ): 2.1V
• Current - DC Forward (If) (Max): 50mA
• Voltage - DC Reverse (Vr) (Max): 3V
• Capacitance: 30pF
• Connector Type: -

pacchetto: -

TLE49611MXTMA1

Infineon Technologies

MAGNETIC SWITCH LATCH SOT23-3

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 3.5mT Trip, -3.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 32 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 170°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-15

pacchetto: TO-236-3, SC-59, SOT-23-3

PVA1354NS

Infineon Technologies

IC RELAY PHOTOVO 100V 375MA 8SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 5 Ohm
• Load Current: 375mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
• Supplier Device Package: 8-SMT Modified
• Relay Type: Relay

pacchetto: 8-SMD (0.300", 7.62mm) 4 Leads

IR3570AMCP01TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

pacchetto: 40-VFQFN Exposed Pad

TLE52062GNTMA1

Infineon Technologies

IC MOTOR DRIVER PAR TO263-7

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

FF4MR20KM1HHPSA1

Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

pacchetto: -

FZ1000R33HE3B60BPSA1

Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-IHVB13

• IGBT Type: Trench Field Stop
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 1000 A
• Power - Max: 1600000 W
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-IHVB130-3

pacchetto: -

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PEF55016EV1-3-G

Infineon Technologies

GEMINAX-D16 PRO E V2.1 16 CHANNE

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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IS26KL128S-DABLA300

Infineon Technologies

INFINEON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: HyperFlash
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-VFBGA (6x8)

pacchetto: -

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AUIRFS3107-7TRL

Infineon Technologies

MOSFET N-CH 75V 240A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacchetto: -

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T3841N18TOFVTXPSA1

Infineon Technologies

STD THYR/DIODEN DISC

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

SLS32AIA010MLUSON10XTMA2

Infineon Technologies

OPTIGA TRUST M V3 HIGH TEMP

• Applications: Security
• Core Processor: 16-Bit
• Program Memory Type: NVM (10kB)
• Controller Series: -
• RAM Size: -
• Interface: I2C
• Number of I/O: -
• Voltage - Supply: 1.62V ~ 5.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: PG-USON-10-2

pacchetto: -

S25HS01GTFABHA030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

pacchetto: -

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S80KS2564GACHV043

Infineon Technologies

SPCM

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 256Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 49-VBGA
• Supplier Device Package: 49-FBGA (8x8)

pacchetto: -

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