Pagina 11 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

IRLU3636-701TRP

Infineon Technologies

MOSFET N-CH 60V 50A IPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IMZA65R030M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
Vgs (Max): +20V, -2V
FET Feature: -
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-3
Package / Case: TO-247-4

pacchetto: -

Azione573

SiCFET (Silicon Carbide)

650 V

53A (Tc)

18V

5.7V @ 8.8mA

48 nC @ 18 V

1643 pF @ 400 V

+20V, -2V

-

197W (Tc)

42mOhm @ 29.5A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-3

TO-247-4

AUIRLR3636TRL

Infineon Technologies

MOSFET N-CH 60V 99A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

60 V

50A (Tc)

-

2.5V @ 100µA

49 nC @ 4.5 V

3779 pF @ 50 V

-

143W (Tc)

6.8mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC014N03MSGATMA1

Infineon Technologies

MOSFET N-CH 30V 30A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

30 V

30A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

173 nC @ 10 V

13000 pF @ 15 V

±20V

-

2.5W (Ta), 139W (Tc)

1.4mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPT60R055CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 44A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

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MOSFET (Metal Oxide)

600 V

44A (Tc)

10V

4.5V @ 760µA

67 nC @ 10 V

2721 pF @ 400 V

±20V

-

236W (Tc)

55mOhm @ 15.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IRFH5015TR2PBF

Infineon Technologies

MOSFET N-CH 150V 10A 8VQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

pacchetto: -

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MOSFET (Metal Oxide)

150 V

10A (Ta), 56A (Tc)

-

5V @ 150µA

50 nC @ 10 V

2300 pF @ 50 V

-

31mOhm @ 34A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

IPL60R095CFD7AUMA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

pacchetto: -

Azione8.340

MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

4.5V @ 570µA

51 nC @ 10 V

2103 pF @ 400 V

±20V

-

147W (Tc)

95mOhm @ 1.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

IPP139N08N3GXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

80 V

45A (Tc)

6V, 10V

3.5V @ 33µA

25 nC @ 10 V

1730 pF @ 40 V

±20V

-

79W (Tc)

13.9mOhm @ 45A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPLK80R1K2P7ATMA1

Infineon Technologies

MOSFET 800V TDSON-8

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

800 V

-

±20V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPW50R190CEFKSA1

Infineon Technologies

MOSFET N-CH 500V 18.5A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacchetto: -

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MOSFET (Metal Oxide)

500 V

18.5A (Tc)

13V

3.5V @ 510µA

47.2 nC @ 10 V

1137 pF @ 100 V

±20V

-

127W (Tc)

190mOhm @ 6.2A, 13V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPF010N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-U02
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacchetto: -

Azione2.250

MOSFET (Metal Oxide)

60 V

44A (Ta), 293A (Tc)

6V, 10V

3.3V @ 246µA

305 nC @ 10 V

13800 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

1.05mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-U02

TO-263-7, D2PAK (6 Leads + Tab)

IRLML6401TR

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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MOSFET (Metal Oxide)

12 V

4.3A (Ta)

-

950mV @ 250µA

15 nC @ 5 V

830 pF @ 10 V

-

50mOhm @ 4.3A, 4.5V

-

Surface Mount

Micro3™/SOT-23

TO-236-3, SC-59, SOT-23-3

ISC015N04NM5ATMA1

Infineon Technologies

40V 1.5M OPTIMOS MOSFET SUPERSO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione1.557

MOSFET (Metal Oxide)

40 V

33A (Ta), 206A (Tc)

7V, 10V

3.4V @ 60µA

67 nC @ 10 V

4800 pF @ 20 V

±20V

-

3W (Ta), 115W (Tc)

1.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IRLML6402TR

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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MOSFET (Metal Oxide)

20 V

3.7A (Ta)

-

1.2V @ 250µA

12 nC @ 5 V

633 pF @ 10 V

-

65mOhm @ 3.7A, 4.5V

-

Surface Mount

Micro3™/SOT-23

TO-236-3, SC-59, SOT-23-3

IAUC100N08S5N031ATMA1

Infineon Technologies

MOSFET N-CH 80V 100A TDSON-8-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

pacchetto: -

Azione12.468

MOSFET (Metal Oxide)

80 V

100A (Tc)

6V, 10V

3.8V @ 95µA

76 nC @ 10 V

5525 pF @ 40 V

±20V

-

167W (Tc)

3.1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

BTS247Z

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

BSC026N02KSGAUMA1

Infineon Technologies

MOSFET N-CH 20V 25A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

pacchetto: -

Azione7.446

MOSFET (Metal Oxide)

20 V

25A (Ta), 100A (Tc)

2.5V, 4.5V

1.2V @ 200µA

52.7 nC @ 4.5 V

7800 pF @ 10 V

±12V

-

2.8W (Ta), 78W (Tc)

2.6mOhm @ 50A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPT030N12N3GATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 237A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

Azione25.734

MOSFET (Metal Oxide)

120 V

24A (Ta), 237A (Tc)

10V

4V @ 270µA

198 nC @ 10 V

13000 pF @ 60 V

±20V

-

3.8W (Ta), 375W (Tc)

3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IMBG120R060M1HXTMA1

Infineon Technologies

SICFET N-CH 1.2KV 36A TO263

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Vgs (Max): +18V, -15V
FET Feature: -
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

Azione5.841

SiCFET (Silicon Carbide)

1200 V

36A (Tc)

-

5.7V @ 5.6mA

34 nC @ 18 V

1145 pF @ 800 V

+18V, -15V

-

181W (Tc)

83mOhm @ 13A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IMT65R083M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

Azione5.895

SiCFET (Silicon Carbide)

650 V

-

18V

-

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPD95R750P7ATMA1

Infineon Technologies

MOSFET N-CH 950V 9A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione6.060

MOSFET (Metal Oxide)

950 V

9A (Tc)

10V

3.5V @ 220µA

23 nC @ 10 V

712 pF @ 400 V

±20V

-

73W (Tc)

750mOhm @ 4.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

92-0263PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IRLMS2002TR

Infineon Technologies

MOSFET N-CH 20V 6.5A 6-TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro6™(SOT23-6)
Package / Case: SOT-23-6

pacchetto: -

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MOSFET (Metal Oxide)

20 V

6.5A (Ta)

-

1.2V @ 250µA

22 nC @ 5 V

1310 pF @ 15 V

-

30mOhm @ 6.5A, 4.5V

-

Surface Mount

Micro6™(SOT23-6)

SOT-23-6

IRFP4310ZPBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-901
Package / Case: TO-247-3

pacchetto: -

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MOSFET (Metal Oxide)

100 V

120A (Tc)

10V

4V @ 1.037mA

170 nC @ 10 V

6860 pF @ 50 V

±20V

-

280W (Tc)

6mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3-901

TO-247-3

BSC093N15NS5SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

pacchetto: -

Azione10.554

MOSFET (Metal Oxide)

150 V

87A (Tc)

8V, 10V

4.6V @ 107µA

40.7 nC @ 10 V

3230 pF @ 75 V

±20V

-

139W (Tc)

9.3mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

ISP25DP06NMXTSA1

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223-4

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

pacchetto: -

Azione11.919

MOSFET (Metal Oxide)

60 V

1.9A (Ta)

10V

4V @ 270µA

10.8 nC @ 10 V

420 pF @ 30 V

±20V

-

1.8W (Ta), 4.2W (Tc)

250mOhm @ 1.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IPD042P03L3GBTMA1

Infineon Technologies

MOSFET P-CH 30V 70A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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MOSFET (Metal Oxide)

30 V

70A (Tc)

4.5V, 10V

2V @ 270µA

175 nC @ 10 V

12400 pF @ 15 V

±20V

-

150W (Tc)

4.2mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB03N03LAG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

25 V

80A (Tc)

4.5V, 10V

2V @ 100µA

57 nC @ 5 V

7027 pF @ 15 V

±20V

-

150W (Tc)

2.7mOhm @ 55A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU3636-701TRP	Infineon Technologies	MOSFET N-CH 60V 50A IPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMZA65R030M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 8.8mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	pacchetto: -	Azione573	SiCFET (Silicon Carbide)	650 V	53A (Tc)	18V	5.7V @ 8.8mA	48 nC @ 18 V	1643 pF @ 400 V	+20V, -2V	-	197W (Tc)	42mOhm @ 29.5A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
AUIRLR3636TRL	Infineon Technologies	MOSFET N-CH 60V 99A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	-	2.5V @ 100µA	49 nC @ 4.5 V	3779 pF @ 50 V	-	-	143W (Tc)	6.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC014N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 30A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	173 nC @ 10 V	13000 pF @ 15 V	±20V	-	2.5W (Ta), 139W (Tc)	1.4mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPT60R055CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 44A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	44A (Tc)	10V	4.5V @ 760µA	67 nC @ 10 V	2721 pF @ 400 V	±20V	-	236W (Tc)	55mOhm @ 15.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IRFH5015TR2PBF	Infineon Technologies	MOSFET N-CH 150V 10A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A (Ta), 56A (Tc)	-	5V @ 150µA	50 nC @ 10 V	2300 pF @ 50 V	-	-	-	31mOhm @ 34A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IPL60R095CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	pacchetto: -	Azione8.340	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.5V @ 570µA	51 nC @ 10 V	2103 pF @ 400 V	±20V	-	147W (Tc)	95mOhm @ 1.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
IPP139N08N3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	80 V	45A (Tc)	6V, 10V	3.5V @ 33µA	25 nC @ 10 V	1730 pF @ 40 V	±20V	-	79W (Tc)	13.9mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPLK80R1K2P7ATMA1	Infineon Technologies	MOSFET 800V TDSON-8 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	800 V	-	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPW50R190CEFKSA1	Infineon Technologies	MOSFET N-CH 500V 18.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 510µA Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	500 V	18.5A (Tc)	13V	3.5V @ 510µA	47.2 nC @ 10 V	1137 pF @ 100 V	±20V	-	127W (Tc)	190mOhm @ 6.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPF010N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 293A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 246µA Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-U02 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	pacchetto: -	Azione2.250	MOSFET (Metal Oxide)	60 V	44A (Ta), 293A (Tc)	6V, 10V	3.3V @ 246µA	305 nC @ 10 V	13800 pF @ 30 V	±20V	-	3.8W (Ta), 300W (Tc)	1.05mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-U02	TO-263-7, D2PAK (6 Leads + Tab)
IRLML6401TR	Infineon Technologies	MOSFET P-CH 12V 4.3A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	-	950mV @ 250µA	15 nC @ 5 V	830 pF @ 10 V	-	-	-	50mOhm @ 4.3A, 4.5V	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
ISC015N04NM5ATMA1	Infineon Technologies	40V 1.5M OPTIMOS MOSFET SUPERSO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione1.557	MOSFET (Metal Oxide)	40 V	33A (Ta), 206A (Tc)	7V, 10V	3.4V @ 60µA	67 nC @ 10 V	4800 pF @ 20 V	±20V	-	3W (Ta), 115W (Tc)	1.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IRLML6402TR	Infineon Technologies	MOSFET P-CH 20V 3.7A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	-	1.2V @ 250µA	12 nC @ 5 V	633 pF @ 10 V	-	-	-	65mOhm @ 3.7A, 4.5V	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IAUC100N08S5N031ATMA1	Infineon Technologies	MOSFET N-CH 80V 100A TDSON-8-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	pacchetto: -	Azione12.468	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3.8V @ 95µA	76 nC @ 10 V	5525 pF @ 40 V	±20V	-	167W (Tc)	3.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
BTS247Z	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC026N02KSGAUMA1	Infineon Technologies	MOSFET N-CH 20V 25A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	pacchetto: -	Azione7.446	MOSFET (Metal Oxide)	20 V	25A (Ta), 100A (Tc)	2.5V, 4.5V	1.2V @ 200µA	52.7 nC @ 4.5 V	7800 pF @ 10 V	±12V	-	2.8W (Ta), 78W (Tc)	2.6mOhm @ 50A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPT030N12N3GATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 237A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Azione25.734	MOSFET (Metal Oxide)	120 V	24A (Ta), 237A (Tc)	10V	4V @ 270µA	198 nC @ 10 V	13000 pF @ 60 V	±20V	-	3.8W (Ta), 375W (Tc)	3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IMBG120R060M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 36A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Azione5.841	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	-	5.7V @ 5.6mA	34 nC @ 18 V	1145 pF @ 800 V	+18V, -15V	-	181W (Tc)	83mOhm @ 13A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMT65R083M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Azione5.895	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPD95R750P7ATMA1	Infineon Technologies	MOSFET N-CH 950V 9A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione6.060	MOSFET (Metal Oxide)	950 V	9A (Tc)	10V	3.5V @ 220µA	23 nC @ 10 V	712 pF @ 400 V	±20V	-	73W (Tc)	750mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
92-0263PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLMS2002TR	Infineon Technologies	MOSFET N-CH 20V 6.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	-	1.2V @ 250µA	22 nC @ 5 V	1310 pF @ 15 V	-	-	-	30mOhm @ 6.5A, 4.5V	-	Surface Mount	Micro6™(SOT23-6)	SOT-23-6
IRFP4310ZPBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.037mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-901 Package / Case: TO-247-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4V @ 1.037mA	170 nC @ 10 V	6860 pF @ 50 V	±20V	-	280W (Tc)	6mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-901	TO-247-3
BSC093N15NS5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 107µA Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	pacchetto: -	Azione10.554	MOSFET (Metal Oxide)	150 V	87A (Tc)	8V, 10V	4.6V @ 107µA	40.7 nC @ 10 V	3230 pF @ 75 V	±20V	-	139W (Tc)	9.3mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
ISP25DP06NMXTSA1	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	pacchetto: -	Azione11.919	MOSFET (Metal Oxide)	60 V	1.9A (Ta)	10V	4V @ 270µA	10.8 nC @ 10 V	420 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	250mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPD042P03L3GBTMA1	Infineon Technologies	MOSFET P-CH 30V 70A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	70A (Tc)	4.5V, 10V	2V @ 270µA	175 nC @ 10 V	12400 pF @ 15 V	±20V	-	150W (Tc)	4.2mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB03N03LAG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	25 V	80A (Tc)	4.5V, 10V	2V @ 100µA	57 nC @ 5 V	7027 pF @ 15 V	±20V	-	150W (Tc)	2.7mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB