Pagina 194 - Prodotti IXYS | Heisener Electronics

Numero di parte	Produttore	Descrizione	pacchetto	Azione
IXSK30N60CD1	IXYS	IGBT 600V 55A 200W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 200W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 30ns/90ns Test Condition: 480V, 30A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264AA(IXSK)	pacchetto: TO-264-3, TO-264AA	Azione4.880
IXFN170N10	IXYS	MOSFET N-CH 100V 170A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 515nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	pacchetto: SOT-227-4, miniBLOC	Azione6.016
IXFX26N60Q	IXYS	MOSFET N-CH 600V 26A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	pacchetto: TO-247-3	Azione6.624
IXFK180N15P	IXYS	MOSFET N-CH 150V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	pacchetto: TO-264-3, TO-264AA	Azione6.128
IXTT30N50L	IXYS	MOSFET N-CH 500V 30A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Azione5.584
IXFR70N15	IXYS	MOSFET N-CH 150V 67A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	pacchetto: ISOPLUS247?	Azione103.464
IXTR20P50P	IXYS	MOSFET P-CH 500V 13A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	pacchetto: ISOPLUS247?	Azione4.176
IXTT6N120	IXYS	MOSFET N-CH 1200V 6A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Azione4.176
150-102N02A-00	IXYS	RF MOSFET N-CHANNEL DE150 Transistor Type: N-Channel Frequency: 30MHz Gain: - Voltage - Test: - Current Rating: 50µA Noise Figure: - Current - Test: - Power - Output: 200W Voltage - Rated: 1000V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE150	pacchetto: 6-SMD, Flat Lead Exposed Pad	Azione6.444
MCC170-16IO1	IXYS	MOD THYRISTOR DUAL 1600V Y1-CU Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 203A Current - On State (It (RMS)) (Max): 350A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5800A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	pacchetto: Y1-CU	Azione3.392
MDC700-18IO1W	IXYS	DIODE MODULE 1800V WC-500 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 700A Current - On State (It (RMS)) (Max): 1331A Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz Current - Hold (Ih) (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-500	pacchetto: WC-500	Azione2.848
VWO50-16IO7	IXYS	MODULE AC CTLR 3PH 1600V PWS-F Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 23A Current - On State (It (RMS)) (Max): 36A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	pacchetto: Module	Azione3.920
DSB1I60SA	IXYS	DIODE SCHOTTKY 60V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione3.344
DSA1-16D	IXYS	DIODE AVALANCHE 1.6KV 2.3A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Radial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: Radial	Azione20.400
DNA30E2200PZ	IXYS	DIODE RECT 2200V 30A D2PAK-HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione14.916
DSEE8-08CC	IXYS	DIODE ARRAY 800V 10A ISOPLUS220 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.53V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 60µA @ 800V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	pacchetto: ISOPLUS220?	Azione4.336
MDD255-20N1	IXYS	DIODE MODULE 2KV 270A Y1-CU Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io) (per Diode): 270A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 2000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU	pacchetto: Y1-CU	Azione4.176
MDD255-16N1	IXYS	DIODE MODULE 1.6KV 270A Y1-CU Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 270A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 1600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU	pacchetto: Y1-CU	Azione6.224
DSEP2X31-12A	IXYS	DIODE MODULE 1.2KV 30A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 2.72V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	pacchetto: SOT-227-4, miniBLOC	Azione5.056
DSEK60-12A	IXYS	DIODE ARRAY GP 1200V 26A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 26A Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 750µA @ 1200V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	pacchetto: TO-3P-3 Full Pack	Azione103.464
VUO60-16NO3	IXYS	RECT BRIDGE 3PH 1600V 72A FO-F-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 72A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-F-B Supplier Device Package: FO-F-B	pacchetto: FO-F-B	Azione6.704
SLMD600H10L	IXYS	MONO SOLAR CELL 22MM X 35MM Power (Watts) - Max: 111mW Current @ Pmpp: 22.3mA Voltage @ Pmpp: 5.01V Current Short Circuit (Isc): 25mA Type: Monocrystalline Voltage - Open Circuit: 6.3V Operating Temperature: - Package / Case: Cell (10) Size / Dimension: 0.866" L x 1.378" W x 0.079" H (22.00mm x 35.00mm x 2.00mm)	pacchetto: Cell (10)	Azione14.526
IXGH30N120B3	IXYS	DISC IGBT PT-MID FREQUENCY TO-24 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Power - Max: 300 W Switching Energy: 3.47mJ (on), 2.16mJ (off) Input Type: Standard Gate Charge: 87 nC Td (on/off) @ 25°C: 16ns/127ns Test Condition: 960V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 37 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	pacchetto: -	Request a Quote
IXTA120P065T-TRL	IXYS	MOSFET P-CH 65V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote
N5415EA360	IXYS	SCR 3.6KV W107 Voltage - Off State: 3.6 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 5415 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W107	pacchetto: -	Request a Quote
MCMA700P1600NCA	IXYS	SCR MODULE 1.6KV 700A COMPACK Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 700 A Current - On State (It (RMS)) (Max): 1100 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: ComPack	pacchetto: -	Request a Quote
IXDR35N120D1	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote
IXFK210N30X3	IXYS	MOSFET N-CH 300V 210A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	pacchetto: -	Request a Quote

IXSK30N60CD1

IXYS

IGBT 600V 55A 200W TO264

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 200W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 30ns/90ns
Test Condition: 480V, 30A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA(IXSK)

pacchetto: TO-264-3, TO-264AA

Azione4.880

IXFN170N10

IXYS

MOSFET N-CH 100V 170A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 515nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

Azione6.016

IXFX26N60Q

IXYS

MOSFET N-CH 600V 26A PLUS 247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

pacchetto: TO-247-3

Azione6.624

IXFK180N15P

IXYS

MOSFET N-CH 150V 180A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

Azione6.128

IXTT30N50L

IXYS

MOSFET N-CH 500V 30A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Azione5.584

IXFR70N15

IXYS

MOSFET N-CH 150V 67A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

pacchetto: ISOPLUS247?

Azione103.464

IXTR20P50P

IXYS

MOSFET P-CH 500V 13A ISOPLUS247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 490 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

pacchetto: ISOPLUS247?

Azione4.176

IXTT6N120

IXYS

MOSFET N-CH 1200V 6A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Azione4.176

150-102N02A-00

IXYS

RF MOSFET N-CHANNEL DE150

Transistor Type: N-Channel
Frequency: 30MHz
Gain: -
Voltage - Test: -
Current Rating: 50µA
Noise Figure: -
Current - Test: -
Power - Output: 200W
Voltage - Rated: 1000V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE150

pacchetto: 6-SMD, Flat Lead Exposed Pad

Azione6.444

MCC170-16IO1

IXYS

MOD THYRISTOR DUAL 1600V Y1-CU

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 203A
Current - On State (It (RMS)) (Max): 350A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5800A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

pacchetto: Y1-CU

Azione3.392

MDC700-18IO1W

IXYS

DIODE MODULE 1800V WC-500

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 700A
Current - On State (It (RMS)) (Max): 1331A
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
Current - Hold (Ih) (Max): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-500

pacchetto: WC-500

Azione2.848

VWO50-16IO7

IXYS

MODULE AC CTLR 3PH 1600V PWS-F

Structure: 3-Phase Controller - All SCRs
Number of SCRs, Diodes: 6 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 23A
Current - On State (It (RMS)) (Max): 36A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

pacchetto: Module

Azione3.920

DSB1I60SA

IXYS

DIODE SCHOTTKY 60V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione3.344

DSA1-16D

IXYS

DIODE AVALANCHE 1.6KV 2.3A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Radial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Radial

Azione20.400

DNA30E2200PZ

IXYS

DIODE RECT 2200V 30A D2PAK-HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione14.916

DSEE8-08CC

IXYS

DIODE ARRAY 800V 10A ISOPLUS220

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.53V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 60µA @ 800V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

pacchetto: ISOPLUS220?

Azione4.336

MDD255-20N1

IXYS

DIODE MODULE 2KV 270A Y1-CU

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io) (per Diode): 270A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 2000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU

pacchetto: Y1-CU

Azione4.176

MDD255-16N1

IXYS

DIODE MODULE 1.6KV 270A Y1-CU

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 270A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 1600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU

pacchetto: Y1-CU

Azione6.224

DSEP2X31-12A

IXYS

DIODE MODULE 1.2KV 30A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.72V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

pacchetto: SOT-227-4, miniBLOC

Azione5.056

DSEK60-12A

IXYS

DIODE ARRAY GP 1200V 26A TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 26A
Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 750µA @ 1200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

pacchetto: TO-3P-3 Full Pack

Azione103.464

VUO60-16NO3

IXYS

RECT BRIDGE 3PH 1600V 72A FO-F-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 72A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-F-B
Supplier Device Package: FO-F-B

pacchetto: FO-F-B

Azione6.704

SLMD600H10L

IXYS

MONO SOLAR CELL 22MM X 35MM

Power (Watts) - Max: 111mW
Current @ Pmpp: 22.3mA
Voltage @ Pmpp: 5.01V
Current Short Circuit (Isc): 25mA
Type: Monocrystalline
Voltage - Open Circuit: 6.3V
Operating Temperature: -
Package / Case: Cell (10)
Size / Dimension: 0.866" L x 1.378" W x 0.079" H (22.00mm x 35.00mm x 2.00mm)

pacchetto: Cell (10)

Azione14.526

IXGH30N120B3

IXYS

DISC IGBT PT-MID FREQUENCY TO-24

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Power - Max: 300 W
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 87 nC
Td (on/off) @ 25°C: 16ns/127ns
Test Condition: 960V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 37 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

pacchetto: -

Request a Quote

IXTA120P065T-TRL

IXYS

MOSFET P-CH 65V 120A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 65 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Request a Quote

N5415EA360

IXYS

SCR 3.6KV W107

Voltage - Off State: 3.6 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 5415 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W107

pacchetto: -

Request a Quote

MCMA700P1600NCA

IXYS

SCR MODULE 1.6KV 700A COMPACK

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 700 A
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ComPack

pacchetto: -

Request a Quote

IXDR35N120D1

IXYS

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

IXFK210N30X3

IXYS

MOSFET N-CH 300V 210A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

pacchetto: -

Request a Quote