Pagina 33 - Prodotti ISSI, Integrated Silicon Solution Inc - Memoria | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 813
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Prodotti ISSI, Integrated Silicon Solution Inc - Memoria

Record 5.873
Pagina  33/210
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS43R16320F-6TL-TR
ISSI, Integrated Silicon Solution Inc

512M, 2.5V, DDR 32Mx16, 166MHz,

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mbit
  • Memory Interface: SSTL_2
  • Clock Frequency: 167 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700 ps
  • Voltage - Supply: 2.3V ~ 2.7V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR
512Mbit
SSTL_2
167 MHz
15ns
700 ps
2.3V ~ 2.7V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
IS61WV10248EEBLL-10B2LI-TR
ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed/Low Power,Async w

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
IS61WV6416EEBLL-10KLI
ISSI, Integrated Silicon Solution Inc

1Mb,High-Speed/Low Power,Async w

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
IS45S16160L-6TLA1
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
pacchetto: -
Request a Quote
DRAM
SDRAM
256Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS21ES08GA-JQLI-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 64GBIT EMMC 100LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 64Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LFBGA (14x18)
pacchetto: -
Azione2.808
FLASH
FLASH - NAND (MLC)
64Gbit
eMMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LFBGA (14x18)
IS46TR16640C-107MBLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
Parallel
933 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS61WV102416EDALL-12TLI-TR
ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 12

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
12ns
12 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IS43TR85120AL-107MBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (9x10.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (9x10.5)
IS46LQ32128AL-062BLA2-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
IS42S16160L-7BLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
pacchetto: -
Request a Quote
DRAM
SDRAM
256Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS43TR82560DL-125KBLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 78TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
IS43LQ32640A-062BLI
ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-VFBGA (10x14.5)
IS25LP064D-JBLA3-TR
ISSI, Integrated Silicon Solution Inc

64Mb QPI/QSPI, 8-pin SOP 208Mil,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
64Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
6.5 ns
2.3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS65WV1288FBLL-55CTLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT PARALLEL 32TSOP I

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
pacchetto: -
Request a Quote
SRAM
SRAM - Synchronous
1Mbit
Parallel
-
55ns
55 ns
2.2V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
IS46TR16640BL-125JBLA25
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 115°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 115°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25WP256E-RMLE-TR
ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 16-pin SOP 300Mi

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS26KL128S-DABLI00
ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT PAR 24VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 96 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-VFBGA (6x8)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
Parallel
100 MHz
-
96 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-VFBGA (6x8)
IS49NLC36160A-25WBL
ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x36, Co

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 2
  • Memory Size: 576Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-TWBGA (11x18.5)
pacchetto: -
Request a Quote
DRAM
RLDRAM 2
576Mbit
HSTL
400 MHz
-
20 ns
1.7V ~ 1.9V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-TWBGA (11x18.5)
IS46LQ32128AL-062BLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
IS22EF16G-JCLA2
ISSI, Integrated Silicon Solution Inc

16GB, 153 BALL FBGA, 3.3V, ROHS,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 128Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND (MLC)
128Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
IS46LQ32640AL-062BLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
IS46LQ32640AL-062BLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 2G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-VFBGA (10x14.5)
IS66WVH32M8DALL-166B1LI-TR
ISSI, Integrated Silicon Solution Inc

256Mb, HyperRAM, 32Mbx8, 1.8V, 1

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 256Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 36ns
  • Access Time: 36 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
pacchetto: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
256Mbit
Parallel
166 MHz
36ns
36 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS25LX064-JHLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 64MBIT SPI/OCTL 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
pacchetto: -
Request a Quote
FLASH
FLASH
64Mbit
SPI - Octal I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS42S32400J-7BLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
pacchetto: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS49NLC96400A-18WBLI
ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Com

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 2
  • Memory Size: 576Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-TWBGA (11x18.5)
pacchetto: -
Request a Quote
DRAM
RLDRAM 2
576Mbit
HSTL
533 MHz
-
15 ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-TWBGA (11x18.5)
IS43TR16128D-093NBLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3
2Gbit
Parallel
1.066 GHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25WP256E-JLLE
ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 8-pin WSON 6X8MM

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)