Prodotti Global Power Technologies Group

GPA030A120MN-FD

Global Power Technologies Group

IGBT 1200V 60A 329W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 329W
• Switching Energy: 4.5mJ (on), 850µJ (off)
• Input Type: Standard
• Gate Charge: 330nC
• Td (on/off) @ 25°C: 40ns/245ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 450ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

pacchetto: TO-3

GSID100A120T2C1

Global Power Technologies Group

SILICON IGBT MODULES

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Power - Max: 640W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 13.7nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: Module

GP1M016A060H

Global Power Technologies Group

MOSFET N-CH 600V 16A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: TO-220-3

GP1M008A050HG

Global Power Technologies Group

MOSFET N-CH 500V 8A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: TO-220-3

GP2M002A060PG

Global Power Technologies Group

MOSFET N-CH 600V 2A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52.1W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

GP1M005A050PH

Global Power Technologies Group

MOSFET N-CH 500V 4.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 92.5W (Tc)
• Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

GCMS080A120B1H1

Global Power Technologies Group

SIC MOSFET FULL BRIDGE MODULE B1

• Type: MOSFET
• Configuration: Full Bridge
• Current: 40A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

pacchetto: Power Module

GHIS020A060B1P2

Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

• Type: IGBT
• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

pacchetto: Power Module

GDP15S120A

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 15A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 15A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: 895pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 135°C

pacchetto: TO-220-2

GDP60P120B

Global Power Technologies Group

DIODE SCHOTT 1.2KV 60A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 60A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 135°C

pacchetto: TO-247-2

GP2D030A120B

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 30A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 1200V
• Capacitance @ Vr, F: 1905pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

GDP12S060D

Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 12A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 487pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 135°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GP2D010A060B

Global Power Technologies Group

SIC SCHOTTKY DIODE 600V 10A TO-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Capacitance @ Vr, F: 527pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-2

GP2D012A060A

Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Capacitance @ Vr, F: 632pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

GP2D040A120U

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 65A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

pacchetto: TO-247-3

GHXS010A060S-D3

Global Power Technologies Group

DIODE SBD SCHOTT 600V 10A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GP2D020A065U

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 650V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

pacchetto: TO-247-3

GP2D020A060U

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

pacchetto: TO-247-3

GHXS030A060S-D3

Global Power Technologies Group

DIODE SBD SHOTT 600V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD160A008S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 80V 160A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 160A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 160A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 80V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD100A010S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 100V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD080A012S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 120V 80A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 120V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD160A015S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 150V 320A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 160A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 150V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD160A010S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 100V 160A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 160A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 160A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXD050A006S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 60V 50A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 50A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXF100A120S1-D3

Global Power Technologies Group

DIODE FAST REC 1200V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 2.35V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 125ns
• Current - Reverse Leakage @ Vr: 25µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GSXF060A020S1-D3

Global Power Technologies Group

DIODE FAST REC 200V 60A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC

GHXS010A060S-D1E

Global Power Technologies Group

MOD SBD BRIDGE 600V 10A SOT227

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

pacchetto: SOT-227-4, miniBLOC