Prodotti GeneSiC Semiconductor - Diodi - Raddrizzatori - Singoli

MBRH240100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH240100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH20045RL

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH20045L

GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH20040RL

GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67 HALF-PAK

MBRH20040L

GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH20035RL

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH20035L

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH20030RL

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH20030L

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH20020RL

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH20020L

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15045RL

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15045L

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15040RL

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15040L

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15035RL

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15035L

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15030RL

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15030L

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

MBRH15020RL

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

MBRH15020L

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

pacchetto: D-67

GB10SLT12-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 1200V 10A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

GB02SLT06-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 650V 2A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

GAP05SLT80-220

GeneSiC Semiconductor

DIODE SCHOTTKY 8KV 50MA AXIAL

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 8000V
• Current - Average Rectified (Io): 50mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 3.8µA @ 8000V
• Capacitance @ Vr, F: 25pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: Axial

1N8028-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 9.4A TO257

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 9.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: 884pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-257-3
• Supplier Device Package: TO-257
• Operating Temperature - Junction: -55°C ~ 250°C

pacchetto: TO-257-3

1N8034-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 9.4A TO257

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 9.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 5µA @ 650V
• Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-257-3
• Supplier Device Package: TO-257
• Operating Temperature - Junction: -55°C ~ 250°C

pacchetto: TO-257-3

1N8031-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 5µA @ 650V
• Capacitance @ Vr, F: 76pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-276AA
• Supplier Device Package: TO-276
• Operating Temperature - Junction: -55°C ~ 250°C

pacchetto: TO-276AA