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Fairchild/ON Semiconductor |
IGBT 600V 23A 100W TO3P
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 23A
- Current - Collector Pulsed (Icm): 92A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 115µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: 49nC
- Td (on/off) @ 25°C: 17ns/60ns
- Test Condition: 300V, 12A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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pacchetto: TO-3P-3, SC-65-3 |
Azione4.400 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 6.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione203.748 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 16A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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pacchetto: SC-94 |
Azione6.552 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione97.488 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 2.6A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 21.9W (Tc)
- Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione19.116 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 240A H-PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 169nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tj)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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pacchetto: 8-PowerSFN |
Azione6.784 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 3.8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione11.052 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione24.690 |
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Fairchild/ON Semiconductor |
TRANS PNP 120V 0.05A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione3.888 |
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Fairchild/ON Semiconductor |
TRANS PNP 65V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione1.995.036 |
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Fairchild/ON Semiconductor |
TRANS PNP 50V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
- Power - Max: 625mW
- Frequency - Transition: 40MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione3.104 |
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Fairchild/ON Semiconductor |
TRANS PNP 60V 1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione4.096 |
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Fairchild/ON Semiconductor |
TRANS NPN 350V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 350mW
- Frequency - Transition: 50MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione34.800 |
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Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 200MW SOT323
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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pacchetto: SC-70, SOT-323 |
Azione7.568 |
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Fairchild/ON Semiconductor |
TRANS RF NPN 15V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 15dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione7.664 |
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Fairchild/ON Semiconductor |
DIODE ZENER 43V 500MW DO35
- Voltage - Zener (Nom) (Vz): 43V
- Tolerance: ±7%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 32V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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pacchetto: DO-204AH, DO-35, Axial |
Azione5.680 |
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Fairchild/ON Semiconductor |
DIODE ARRAY GP 100V 200MA SOT23
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 100V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.232 |
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Fairchild/ON Semiconductor |
IC LED DRIVER CTRLR DIM 16SO
- Type: DC DC Controller
- Topology: Step-Up (Boost)
- Internal Switch(s): No
- Number of Outputs: 1
- Voltage - Supply (Min): 10V
- Voltage - Supply (Max): 35V
- Voltage - Output: -
- Current - Output / Channel: -
- Frequency: 50kHz ~ 300kHz
- Dimming: Analog, PWM
- Applications: Backlight
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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pacchetto: 16-SOIC (0.154", 3.90mm Width) |
Azione7.568 |
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Fairchild/ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 12ns, 9ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.208 |
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Fairchild/ON Semiconductor |
IC LATCH OCTAL D 3STATE 20DIP
- Logic Type: D-Type Transparent Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 2 V ~ 5.5 V
- Independent Circuits: 1
- Delay Time - Propagation: 4.5ns
- Current - Output High, Low: 8mA, 8mA
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
- Supplier Device Package: 20-PDIP
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pacchetto: 20-DIP (0.300", 7.62mm) |
Azione59.724 |
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Fairchild/ON Semiconductor |
IC GATE NAND 4CH 2-INP 14-SOIC
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 12mA, 12mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.209", 5.30mm Width)
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pacchetto: 14-SOIC (0.209", 5.30mm Width) |
Azione6.272 |
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Fairchild/ON Semiconductor |
IC TRANSCVR TRI-ST 16BIT 54FBGA
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-LFBGA
- Supplier Device Package: 54-FBGA (5.5x8)
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pacchetto: 54-LFBGA |
Azione4.688 |
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Fairchild/ON Semiconductor |
LED GREEN CLEAR SHORT 5MM T/H
- Color: -
- Configuration: -
- Lens Color: -
- Lens Transparency: -
- Millicandela Rating: -
- Lens Style/Size: -
- Voltage - Forward (Vf) (Typ): -
- Current - Test: -
- Viewing Angle: -
- Mounting Type: Through Hole
- Wavelength - Dominant: -
- Wavelength - Peak: -
- Features: -
- Package / Case: Radial
- Supplier Device Package: T-1 3/4 (5mm)
- Size / Dimension: -
- Height (Max): 8.60mm
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pacchetto: Radial |
Azione5.724 |
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Fairchild/ON Semiconductor |
SENSOR OPTO SLOT 3MM DARL THRU
- Sensing Distance: 0.118" (3mm)
- Sensing Method: Transmissive
- Output Configuration: Photodarlington
- Current - DC Forward (If) (Max): 50mA
- Current - Collector (Ic) (Max): 40mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Response Time: 7µs, 45µs
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: PCB Mount
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pacchetto: PCB Mount |
Azione8.244 |
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Fairchild/ON Semiconductor |
OPTOISOLATOR 3.75KV TRIAC 4SMD
- Output Type: Triac
- Zero Crossing Circuit: No
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Voltage - Off State: 600V
- Static dV/dt (Min): 1kV/µs
- Current - LED Trigger (Ift) (Max): 10mA
- Current - On State (It (RMS)) (Max): 70mA
- Current - Hold (Ih): 300µA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 60mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-Mini-Flat
- Approvals: cUR, UR, VDE
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pacchetto: 4-SMD, Gull Wing |
Azione8.550 |
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Fairchild/ON Semiconductor |
OPTOISO 3.75KV TRANSISTOR 4SMD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 300% @ 5mA
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): 3µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 40V
- Current - Output / Channel: 80mA
- Voltage - Forward (Vf) (Typ): 1.3V (Max)
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-Mini-Flat
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pacchetto: 4-SMD, Gull Wing |
Azione8.964 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANS W/BASE 6SMD
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): 20% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): -
- Input Type: AC, DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: -
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 100mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Gull Wing
- Supplier Device Package: 6-SMD
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pacchetto: 6-SMD, Gull Wing |
Azione4.608 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANSISTOR 4DIP
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): 130% @ 5mA
- Current Transfer Ratio (Max): 260% @ 5mA
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): 2.4µs, 2.4µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 70V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 200mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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pacchetto: 4-DIP (0.300", 7.62mm) |
Azione289.116 |
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