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Fairchild/ON Semiconductor |
IGBT 600V 27A 104W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 27A
- Current - Collector Pulsed (Icm): 110A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 104W
- Switching Energy: 150µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 51nC
- Td (on/off) @ 25°C: 26ns/150ns
- Test Condition: 480V, 12A, 25 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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pacchetto: TO-247-3 |
Azione7.472 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 345W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione8.160 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.7A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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pacchetto: SC-94 |
Azione6.544 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 47A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione118.008 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 14A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione390.108 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione49.920 |
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Fairchild/ON Semiconductor |
TRANS NPN 80V 1.2A TO-226
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
- Power - Max: 1W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-226
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pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.328 |
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Fairchild/ON Semiconductor |
TRANS PNP 50V 0.05A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 40MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.648 |
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Fairchild/ON Semiconductor |
TRANS PNP 50V 0.3A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione7.312 |
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Fairchild/ON Semiconductor |
TRANS NPN DARL 150V 8A TO-220
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 60W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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pacchetto: TO-220-3 |
Azione4.576 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione113.496 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 350mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione854.292 |
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Fairchild/ON Semiconductor |
DIODE ZENER 2.7V 500MW DO35
- Voltage - Zener (Nom) (Vz): 2.7V
- Tolerance: ±7%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 85 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 1V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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pacchetto: DO-204AH, DO-35, Axial |
Azione3.216 |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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pacchetto: DO-204AH, DO-35, Axial |
Azione811.968 |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 120V 10A TO277-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 16.7ns
- Current - Reverse Leakage @ Vr: 25µA @ 120V
- Capacitance @ Vr, F: 608pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 150°C
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pacchetto: TO-277, 3-PowerDFN |
Azione3.920 |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 50nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C (Max)
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione1.788.564 |
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Fairchild/ON Semiconductor |
IC CONVERTER DDR3 24MLP
- Applications: Converter, DDR
- Voltage - Input: 4.5 V ~ 5.5 V
- Number of Outputs: 3
- Voltage - Output: -
- Operating Temperature: -10°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 24-WQFN Exposed Pad
- Supplier Device Package: 24-MLP (5x5)
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pacchetto: 24-WQFN Exposed Pad |
Azione885.144 |
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Fairchild/ON Semiconductor |
IC REG LINEAR 5V 100MA TO92-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 30V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 5.5mA
- PSRR: 80dB (120Hz)
- Control Features: -
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione28.932 |
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Fairchild/ON Semiconductor |
IC REG FWRD FULL BRDG ISO EPM15
- Function: Step-Up/Step-Down
- Output Configuration: Positive, Isolation Capable
- Topology: Forward Converter, Full Bridge
- Output Type: Programmable
- Number of Outputs: 1
- Voltage - Input (Min): 5V
- Voltage - Input (Max): 20V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): 12V
- Current - Output: 40A
- Frequency - Switching: -
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: EPM15
- Supplier Device Package: EPM15
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pacchetto: EPM15 |
Azione2.256 |
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Fairchild/ON Semiconductor |
IC GATE NOR 4CH 2-INP 14-SOIC
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.209", 5.30mm Width)
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pacchetto: 14-SOIC (0.209", 5.30mm Width) |
Azione2.288 |
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Fairchild/ON Semiconductor |
IC COUNTER BIN 12STAGE 16-TSSOP
- Logic Type: Binary Counter
- Direction: Up
- Number of Elements: 1
- Number of Bits per Element: 12
- Reset: Asynchronous
- Timing: -
- Count Rate: 210MHz
- Trigger Type: Negative Edge
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione6.480 |
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Fairchild/ON Semiconductor |
IC TXRX BI-DIRECT 16B LV 48TSSOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 12mA, 12mA; 24mA, 24mA
- Voltage - Supply: 1.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.240", 6.10mm Width)
- Supplier Device Package: 48-TSSOP
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pacchetto: 48-TFSOP (0.240", 6.10mm Width) |
Azione7.520 |
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Fairchild/ON Semiconductor |
IC MUX/DEMUX TRIPLE 2X1 16SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 3
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 6 V
- Voltage - Supply, Dual (V±): ±2 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 41ns, 32ns
- -3db Bandwidth: 35MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 5pF, 30pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -50dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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pacchetto: 16-SOIC (0.295", 7.50mm Width) |
Azione22.764 |
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Fairchild/ON Semiconductor |
EMITTER IR 940NM 100MA TO-46
- Type: Infrared (IR)
- Current - DC Forward (If) (Max): 100mA
- Radiant Intensity (Ie) Min @ If: -
- Wavelength: 940nm
- Voltage - Forward (Vf) (Typ): 1.7V
- Viewing Angle: 80°
- Orientation: Top View
- Operating Temperature: -65°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-46-2 Lens Top Metal Can
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pacchetto: TO-46-2 Lens Top Metal Can |
Azione8.280 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANS W/BASE 6SMD
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): 25% @ 10mA
- Current Transfer Ratio (Max): 400% @ 10mA
- Turn On / Turn Off Time (Typ): 50µs, 150µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 80V
- Current - Output / Channel: 100mA
- Voltage - Forward (Vf) (Typ): 1.23V
- Current - DC Forward (If) (Max): 100mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Gull Wing
- Supplier Device Package: 6-SMD
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pacchetto: 6-SMD, Gull Wing |
Azione4.302 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANS W/BASE 6SMD
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): 20% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 2µs, 2µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: -
- Voltage - Forward (Vf) (Typ): 1.18V
- Current - DC Forward (If) (Max): 100mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Gull Wing
- Supplier Device Package: 6-SMD
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pacchetto: 6-SMD, Gull Wing |
Azione6.534 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANS W/BASE 6DIP
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): 10µs, 10µs (Max)
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: 2mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 100mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
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pacchetto: 6-DIP (0.300", 7.62mm) |
Azione260.796 |
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Fairchild/ON Semiconductor |
OPTOISOLATOR 5KV TRANSISTOR 4DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 400% @ 5mA
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): 4µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 70V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 200mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.400", 10.16mm)
- Supplier Device Package: 4-DIP
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pacchetto: 4-DIP (0.400", 10.16mm) |
Azione1.287.360 |
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