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Diodi - Raddrizzatori - Array

Record 16.443
Pagina  562/588
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DGSK36-03CS
IXYS

DIODE ARRAY SCHOTTKY 300V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 29A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 250µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.280
Schottky
300V
29A
1.9V @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
23ns
250µA @ 300V
-55°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
MA3X786E0L
Panasonic Electronic Components

DIODE ARRAY SCHOTTKY 30V MINI3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 2ns
  • Current - Reverse Leakage @ Vr: 15µA @ 30V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.416
Schottky
30V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
2ns
15µA @ 30V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
DD800S33K2C
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1700V 800A

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.328
-
-
-
-
-
-
-
-
-
-
-
MBRT120200R
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione4.288
Schottky
200V
60A
920mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
VS-VSKJ71/08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 40A ADDAPAK

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 800V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3)
  • Supplier Device Package: ADD-A-PAK?
pacchetto: ADD-A-PAK (3)
Azione3.792
Standard
800V
40A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 800V
-40°C ~ 150°C
Chassis Mount
ADD-A-PAK (3)
ADD-A-PAK?
hot MBR40H60PT-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V TO3P

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
pacchetto: TO-3P-3, SC-65-3
Azione7.344
Schottky
60V
40A
830mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
-65°C ~ 175°C
Through Hole
TO-3P-3, SC-65-3
TO-3P
VB30202C-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 30A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 200V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.528
Schottky
200V
15A
880mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 200V
-40°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
VS-25CTQ045STRL-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 15A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.75mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.624
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.75mA @ 45V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MUR1640CTHC0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 16A, 400V

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.056
Standard
400V
16A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-55°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
VBT3080C-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 80V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.592
Schottky
80V
15A
820mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 80V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
VFT2060G-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 60V ITO-220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione5.872
Schottky
60V
10A (DC)
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
VS-8CWH02FNHM3
Vishay Semiconductor Diodes Division

DIODE STANDARD 200V 4A DPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 4A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 27ns
  • Current - Reverse Leakage @ Vr: 4µA @ 200V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.240
Standard
200V
4A
950mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
27ns
4µA @ 200V
-65°C ~ 175°C
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
BAT 18-04 E6327
Infineon Technologies

DIODE ARRAY GP 35V 100MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 20nA @ 20V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.192
Standard
35V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
120ns
20nA @ 20V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
VS-16CTQ100-N3
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione18.240
Schottky
100V
8A
880mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
175°C (Max)
Through Hole
TO-220-3
TO-220AB
CMXSH-3 TR
Central Semiconductor Corp

DIODE SCHOTTKY 30V 100MA SOT26

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione45.600
Schottky
30V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
-65°C ~ 150°C
Surface Mount
SOT-23-6
SOT-26
DA3X103E0L
Panasonic Electronic Components

DIODE ARRAY GP 80V 100MA MINI3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 100nA @ 80V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G3-B
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione23.394
Standard
80V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
10ns
100nA @ 80V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G3-B
hot STPS16045TV
STMicroelectronics

DIODE MODULE 45V 80A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 80A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
pacchetto: ISOTOP
Azione3.440
Schottky
45V
80A
690mV @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
150°C (Max)
Chassis Mount
ISOTOP
ISOTOP?
SB3040PT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 40V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
pacchetto: -
Azione4.188
Schottky
40 V
30A
550 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247AD (TO-3P)
RRE04EA6DTR
Rohm Semiconductor

DIODE ARRAY GP 600V 400MA TSMD5

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSMD5
pacchetto: -
Azione4.668
Standard
600 V
400mA
1.1 V @ 200 mA
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
150°C
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSMD5
1N6672
Microchip Technology

DIODE ARRAY GP 300V 15A TO254

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 240 V
  • Operating Temperature - Junction: -
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
pacchetto: -
Request a Quote
Standard
300 V
15A
1.35 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 240 V
-
Through Hole
TO-254-3, TO-254AA
TO-254
MBRF20150CTC0
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
Request a Quote
Schottky
150 V
20A
1.05 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
V8P22CHM3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 3.1A TO277A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 3.1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
pacchetto: -
Request a Quote
Schottky
200 V
3.1A
900 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 200 V
-40°C ~ 175°C
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
SBCT2090
Diotec Semiconductor

IC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 90 V
  • Operating Temperature - Junction: -50°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Request a Quote
Schottky
90 V
10A
850 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 90 V
-50°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
RBR20BGE60ATL
Rohm Semiconductor

DIODE ARR SCHOTT 60V 20A TO252GE

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 60 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
pacchetto: -
Azione7.500
Schottky
60 V
20A
590 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 µA @ 60 V
150°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252GE
VS-MBR2090CTPBF
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 90V 10A TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 90 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
pacchetto: -
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Schottky
90 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 90 V
-65°C ~ 150°C
Through Hole
TO-220-3
TO-220-3
JANTX1N7043CCT1
Microchip Technology

DIODE ARR SCHOT 100V 35A TO254AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 35 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254AA
pacchetto: -
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Schottky
100 V
35A
1.3 V @ 35 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA
TO-254AA
RB228NS-40TL
Rohm Semiconductor

DIODE ARRAY SCHOTT 40V 30A LPDS

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
pacchetto: -
Azione2.022
Schottky
40 V
30A
770 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 40 V
150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
BAV99S-APGX
Nexperia USA Inc.

BAV99S/APG/SOT363/SC-88

  • Diode Configuration: 2 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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Standard
100 V
200mA (DC)
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
150°C (Max)
Surface Mount
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