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Diodi - Raddrizzatori - Array

Record 16.443
Pagina  116/588
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
BAW79DE6327HTSA1
Infineon Technologies

DIODE ARRAY GP 400V 1A SOT89

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
pacchetto: TO-243AA
Azione3.072
Standard
400V
1A (DC)
1.6V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1µs
1µA @ 400V
150°C (Max)
Surface Mount
TO-243AA
PG-SOT89
VS-20CWT10TRHE3
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.544
-
-
-
-
-
-
-
-
-
-
-
BAT54C-BO-G3-18
Vishay Semiconductor Diodes Division

DIODE SCHTKY DL 30V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.224
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MURF30005R
GeneSiC Semiconductor

DIODE GEN PURP 50V 150A TO244

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244
pacchetto: TO-244AB
Azione6.192
Standard
50V
150A
1V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 50V
-55°C ~ 150°C
Chassis Mount
TO-244AB
TO-244
MBRTA80045R
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 400A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione7.168
Schottky
45V
400A
720mV @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBRTA50045R
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 250A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 250A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione6.224
Schottky
45V
250A
700mV @ 250A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBRT60030L
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione3.216
Schottky
30V
300A
580mV @ 300A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
hot SS8P3CLHM3/86A
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO277A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 4A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
pacchetto: TO-277, 3-PowerDFN
Azione123.600
Schottky
30V
4A
540mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
-55°C ~ 150°C
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
hot 16CTU04S
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 400V D2PAK D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.000
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
-65°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot BAS40TW-7
Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT363

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione247.860
Schottky
40V
200mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
5ns
200nA @ 30V
-55°C ~ 125°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
VS-VSKD250-20PBF
Vishay Semiconductor Diodes Division

DIODE GEN 2KV 125A MAGNAPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io) (per Diode): 125A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (2)
  • Supplier Device Package: MAGN-A-PAK?
pacchetto: MAGN-A-PAK (2)
Azione4.240
Standard
2000V
125A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 2000V
-40°C ~ 150°C
Chassis Mount
MAGN-A-PAK (2)
MAGN-A-PAK?
MURTA50060R
GeneSiC Semiconductor

DIODE MODULE 600V 500A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 500A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione2.416
Standard
600V
500A (DC)
1.7V @ 250A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
25µA @ 50V
-
Chassis Mount
Three Tower
Three Tower
MBR12080CTR
GeneSiC Semiconductor

DIODE MODULE 80V 120A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 120A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione3.712
Schottky
80V
120A (DC)
840mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 20V
-
Chassis Mount
Twin Tower
Twin Tower
MUR2X060A12
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.35V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione7.184
Standard
1200V
60A
2.35V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 1200V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
hot STTH12003TV1
STMicroelectronics

DIODE MODULE 300V 60A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 120µA @ 300V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
pacchetto: ISOTOP
Azione6.400
Standard
300V
60A
1.25V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
120µA @ 300V
-
Chassis Mount
ISOTOP
ISOTOP?
SR1690 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.696
Schottky
90V
16A
900mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
FEPE16DT-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 200V 16A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione3.184
Standard
200V
16A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
30CTQ035STR
SMC Diode Solutions

DIODE SCHOTTKY 35V 15A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.088
Schottky
35V
15A
620mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 35V
-55°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MURT40040R
GeneSiC Semiconductor

DIODE MODULE 400V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione3.888
Standard, Reverse Polarity
400V
200A (DC)
1.35V @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
25µA @ 50V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
hot FMU-22S
Sanken

DIODE ARRAY GP 200V 10A TO220F

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
pacchetto: TO-220-3 Full Pack
Azione9.732
Standard
200V
10A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
50µA @ 200V
-40°C ~ 150°C
Through Hole
TO-220-3 Full Pack
TO-220F
hot BAR43C
Fairchild/ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.569.888
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
STPS200170TV1
STMicroelectronics

DIODE MODULE 170V 100A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 170V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
pacchetto: ISOTOP
Azione8.052
Schottky
170V
100A
830mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 170V
150°C (Max)
Chassis Mount
ISOTOP
ISOTOP?
MBR1045CT-BP
Micro Commercial Co

DIODE ARRAY GP 45V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Request a Quote
Standard
45 V
10A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 45 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
BAS40W-05-7-F-79
Diodes Incorporated

DIODE ARR SCHOT 40V 200MA SOT323

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Request a Quote
Schottky
40 V
200mA (DC)
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
200 nA @ 30 V
-55°C ~ 125°C
Surface Mount
SC-70, SOT-323
SOT-323
BAS21TMQ-13
Diodes Incorporated

DIODE ARRAY GP 250V 250MA SOT26

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250 V
  • Current - Average Rectified (Io) (per Diode): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
Azione29.940
Standard
250 V
250mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 200 V
-65°C ~ 150°C
Surface Mount
SOT-23-6
SOT-26
SK2S090-150
SMC Diode Solutions

DIODE MOD SCHOTT 150V 45A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 45A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 90 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: -
Azione945
Schottky
150 V
45A
950 mV @ 90 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 150 V
-55°C ~ 200°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
DD600N16KAHPSA1
Infineon Technologies

DIODE MOD GP 1600V 600A BGPB60-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60-1
pacchetto: -
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Standard
1600 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
150°C
Chassis Mount
Module
BG-PB60-1
BAT54T-G
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 30V 200MA SOT363

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
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Schottky
30 V
200mA (DC)
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
-65°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363