Pagina 240 - Diodi - Raddrizzatori a ponte | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori a ponte

Record 7.565
Pagina  240/271
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APT50DL120HJ
Microsemi Corporation

MOD DIODE 1200V SOT-227

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione6.480
Standard
1200V
50A
2.1V @ 50A
250µA @ 1200V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VSIB10A60-E3/45
Vishay Semiconductor Diodes Division

DIODE 10A 600V SGL BRIDGE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
pacchetto: 4-SIP, GSIB-5S
Azione2.768
Standard
600V
10A
1V @ 5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
hot GBPC3501W
Diodes Incorporated

RECT BRIDGE GPP 100V 35A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
pacchetto: 4-Square, GBPC-W
Azione7.456
Standard
100V
35A
1.1V @ 17.5A
5µA @ 100V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
SC3BJ10FF
Semtech Corporation

BRIDGE RECT 1.5A 100V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
  • Current - Reverse Leakage @ Vr: 3µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Rectangle
  • Supplier Device Package: -
pacchetto: 5-Rectangle
Azione4.608
Standard
100V
1.5A
1.2V @ 1.5A
3µA @ 100V
-55°C ~ 150°C (TJ)
Chassis Mount
5-Rectangle
-
GBPC5001T
GeneSiC Semiconductor

DIODE BRIDGE 100V 50A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacchetto: 4-Square, GBPC
Azione6.128
Standard
100V
50A
1.2V @ 25A
5µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS25P07G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione7.888
Standard
1000V
25A
1.1V @ 25A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS8P02GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: 4-SIP, TS-6P
Azione3.472
Standard
100V
8A
1.1V @ 8A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBU2501-G
Comchip Technology

RECTIFIER BRIDGE 25A 100V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacchetto: 4-SIP, KBU
Azione6.720
Standard
100V
3.6A
1.1V @ 12.5A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
BU1208-M3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 12A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
pacchetto: 4-SIP, BU
Azione7.328
Standard
800V
12A
1.05V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BR10005SG-G
Comchip Technology

BRIDGE RECTIFIER 10A 50V BR8 ROH

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-8
  • Supplier Device Package: BR-8
pacchetto: 4-Square, BR-8
Azione7.392
Standard
50V
10A
1.1V @ 5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, BR-8
BR-8
BR34
GeneSiC Semiconductor

DIODE BRIDGE 400V 3A BR-3

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-3
  • Supplier Device Package: BR-3
pacchetto: 4-Square, BR-3
Azione2.976
Standard
400V
3A
1V @ 1.5A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-3
BR-3
GBJ10005TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 10A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
pacchetto: 4-ESIP
Azione5.184
Standard
50V
10A
1.1V @ 10A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
GHXS030A120S-D1E
Global Power Technologies Group

MOD SBD BRIDGE 1200V 30A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione4.224
Silicon Carbide Schottky
1200V
30A
1.7V @ 30A
200µA @ 1200V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
DB157STR
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
pacchetto: 4-SMD, Gull Wing
Azione14.814
Standard
1000V
1.5A
1.1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
VS-KBPC808PBF
Vishay Semiconductor Diodes Division

MOD BRIDGE 1PH 8A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
pacchetto: 4-Square, D-72
Azione6.612
Standard
800V
8A
1V @ 3A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
NTE5301
NTE Electronics, Inc

R-BRIDGE 600V 8 AMP SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
pacchetto: -
Request a Quote
Standard
600 V
8 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIP
GBJA1008-BP
Micro Commercial Co

DIODE BRIDGE 10A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
pacchetto: -
Request a Quote
Standard
800 V
10 A
1.1 V @ 5 A
10 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
GBJ20K
GeneSiC Semiconductor

800V 20A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
pacchetto: -
Request a Quote
Standard
800 V
20 A
1.05 V @ 10 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DB35-14
Diotec Semiconductor

BRIDGE 3-PH DB 1400V 35A 150C

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.4 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB-35
pacchetto: -
Request a Quote
Standard
1.4 kV
35 A
1.05 V @ 17.5 A
10 µA @ 1400 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB-35
GBL204-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
pacchetto: -
Request a Quote
Standard
400 V
2 A
1.05 V @ 1 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBV15D
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 10.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
200 V
10.5 A
1.1 V @ 7.5 A
5 µA @ 200 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBV15K
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: -
Request a Quote
Standard
800 V
10.5 A
1.1 V @ 7.5 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJA1506-BP
Micro Commercial Co

DIODE BRIDGE 15A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
pacchetto: -
Request a Quote
Standard
600 V
15 A
1.05 V @ 7.5 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
DF20AA120
SanRex Corporation

DIOE MODULE 1200V 20A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
  • Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
Standard
1.2 kV
20 A
1.25 V @ 20 A
3 mA @ 1200 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
ABS8U
SMC Diode Solutions

BRIDGE RECT 1PHASE 800V 1A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
pacchetto: -
Request a Quote
Standard
800 V
1 A
1.1 V @ 1 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
697-1
Microchip Technology

BRIDGES

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-Flatpack
  • Supplier Device Package: GA
pacchetto: -
Request a Quote
Standard
100 V
2.5 A
1 V @ 2 A
5 µA @ 100 V
-65°C ~ 150°C (TJ)
Surface Mount
4-Flatpack
GA
LMB4S-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: LMBS-1
pacchetto: -
Request a Quote
Standard
400 V
1 A
950 mV @ 400 mA
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
LMBS-1
DBD10C-E
Sanyo

DBD10 - 1A SINGLE-PHASE BRIDGE R

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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