Pagina 88 - Transistor - IGBT - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - IGBT - Singoli

Record 4.424
Pagina  88/158
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P40N120KDPBF
Infineon Technologies

IGBT 1200V 60A 305W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
  • Power - Max: 305W
  • Switching Energy: 1.6mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 40ns/245ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacchetto: TO-247-3
Azione5.744
1200V
60A
75A
2V @ 15V, 25A
305W
1.6mJ (on), 1.8mJ (off)
Standard
240nC
40ns/245ns
600V, 25A, 10 Ohm, 15V
80ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGP4063-EPBF
Infineon Technologies

IGBT 600V 96A 330W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione103.464
600V
96A
144A
2.14V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
95nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGBC20FD2
Infineon Technologies

IGBT W/DIODE 600V 16A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione14.820
600V
16A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-220-3
TO-220AB
IXGH32N60BD1
IXYS

IGBT 600V 60A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/100ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacchetto: TO-247-3
Azione6.272
600V
60A
120A
2.3V @ 15V, 32A
200W
600µJ (off)
Standard
110nC
25ns/100ns
480V, 32A, 4.7 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot SGL160N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 160A 250W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
  • Power - Max: 250W
  • Switching Energy: 2.5mJ (on), 1.76mJ (off)
  • Input Type: Standard
  • Gate Charge: 345nC
  • Td (on/off) @ 25°C: 40ns/90ns
  • Test Condition: 300V, 80A, 3.9 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
pacchetto: TO-264-3, TO-264AA
Azione11.916
600V
160A
300A
2.6V @ 15V, 80A
250W
2.5mJ (on), 1.76mJ (off)
Standard
345nC
40ns/90ns
300V, 80A, 3.9 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot ISL9V3040S3S
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione314.664
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGB40N6S2
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 115µJ (on), 195µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 8ns/35ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.888
600V
75A
180A
2.7V @ 15V, 20A
290W
115µJ (on), 195µJ (off)
Standard
35nC
8ns/35ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGH30N6S2
Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 6ns/40ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione7.248
600V
45A
108A
2.5V @ 15V, 12A
167W
55µJ (on), 100µJ (off)
Standard
23nC
6ns/40ns
390V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRG7CH37K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 28ns/122ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione3.072
1200V
15A
-
2.3V @ 15V, 15A
-
-
Standard
80nC
28ns/122ns
600V, 15A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SKB02N120ATMA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3-2

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.968
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IXGK400N30B3
IXYS

IGBT 300V 400A TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 400A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
pacchetto: TO-264-3, TO-264AA
Azione5.024
300V
400A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
APT68GA60B2D40
Microsemi Corporation

IGBT 600V 121A 520W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 121A
  • Current - Collector Pulsed (Icm): 202A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 715µJ (on), 607µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 21ns/133ns
  • Test Condition: 400V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
pacchetto: TO-247-3 Variant
Azione7.056
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGR24N120C3H1
IXYS

IGBT 1200V 48A ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione7.360
1200V
48A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
FGH50N3
Fairchild/ON Semiconductor

IGBT 300V 75A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 130µJ (on), 92µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 20ns/135ns
  • Test Condition: 180V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione2.512
300V
75A
240A
1.4V @ 15V, 30A
463W
130µJ (on), 92µJ (off)
Standard
180nC
20ns/135ns
180V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGT60N60C3D1
IXYS

IGBT 600V 75A 380W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione5.120
600V
75A
300A
2.5V @ 15V, 40A
380W
800µJ (on), 450µJ (off)
Standard
115nC
21ns/70ns
480V, 40A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGA48N60A3
IXYS

IGBT 600V 120A 300W TO263AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.120
600V
120A
300A
1.35V @ 15V, 32A
300W
950µJ (on), 2.9mJ (off)
Standard
110nC
25ns/334ns
480V, 32A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
STGB30V60DF
STMicroelectronics

IGBT 600V 60A 258W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.208
600V
60A
120A
2.3V @ 15V, 30A
258W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4BC20FDPBF
Infineon Technologies

IGBT 600V 16A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione13.200
600V
16A
64A
2V @ 15V, 9A
60W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4BC20UPBF
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 100µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 21ns/86ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione6.204
600V
13A
52A
2.1V @ 15V, 6.5A
60W
100µJ (on), 120µJ (off)
Standard
27nC
21ns/86ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4PC30KDPBF
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacchetto: TO-247-3
Azione18.660
600V
28A
58A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
MGB20N36CL
onsemi

IGBT 360V D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
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-
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NGP8203N
onsemi

IGBT 440 20A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
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SIGC42T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 57ns/380ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
57ns/380ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
HG24N60D1D
Harris Corporation

HG24N60D1D

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
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FGA25S125P
onsemi

IGBT 1250V 50A 250W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 204 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
pacchetto: -
Request a Quote
1250 V
50 A
75 A
2.35V @ 15V, 25A
250 W
-
Standard
204 nC
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXYP15N65B3D1
IXYS

IGBT TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
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HGTG2ON60C3DR
Harris Corporation

40A, 600V, RUGGED UFS SERIES N C

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
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IXYX140N120A4
IXYS

IGBT PT 1200V 480A PLUS247-3

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 480 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
  • Power - Max: 1500 W
  • Switching Energy: 4.9mJ (on), 12mJ (off)
  • Input Type: Standard
  • Gate Charge: 420 nC
  • Td (on/off) @ 25°C: 52ns/590ns
  • Test Condition: 600V, 70A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
pacchetto: -
Azione219
1200 V
480 A
1200 A
1.7V @ 15V, 140A
1500 W
4.9mJ (on), 12mJ (off)
Standard
420 nC
52ns/590ns
600V, 70A, 1.5Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3