Pagina 81 - Transistor - IGBT - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - IGBT - Singoli

Record 4.424
Pagina  81/158
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGW10N60AFKSA1
Infineon Technologies

IGBT 600V 20A 92W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacchetto: TO-247-3
Azione7.632
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGD4536TM_SN00306
Fairchild/ON Semiconductor

IGBT 360V 125W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.544
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGP50N60C4
IXYS

IGBT 600V 90A 300W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 840µJ (off)
  • Input Type: Standard
  • Gate Charge: 113nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 400V, 36A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione4.960
600V
90A
220A
2.3V @ 15V, 36A
300W
950µJ (on), 840µJ (off)
Standard
113nC
40ns/270ns
400V, 36A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXST15N120B
IXYS

IGBT 1200V 30A 150W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: 30ns/148ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione6.416
1200V
30A
60A
3.4V @ 15V, 15A
150W
1.5mJ (off)
Standard
57nC
30ns/148ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGH10N100U1
IXYS

IGBT 1000V 20A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 100ns/550ns
  • Test Condition: 800V, 10A, 150 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacchetto: TO-247-3
Azione7.664
1000V
20A
40A
3.5V @ 15V, 10A
100W
2mJ (off)
Standard
52nC
100ns/550ns
800V, 10A, 150 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
AUIRGP4063D-E
Infineon Technologies

IGBT 600V 96A 330W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione4.032
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG8CH76K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 480nC
  • Td (on/off) @ 25°C: 80ns/210ns
  • Test Condition: 600V, 75A, 1.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione7.952
1200V
75A
-
2V @ 15V, 75A
-
-
Standard
480nC
80ns/210ns
600V, 75A, 1.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIKW75N60CTXKSA1
Infineon Technologies

IC DISCRETE 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428W
  • Switching Energy: 2mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacchetto: TO-247-3
Azione2.480
600V
80A
225A
2V @ 15V, 75A
428W
2mJ (on), 2.5mJ (off)
Standard
470nC
33ns/330ns
400V, 75A, 5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGR32N170AH1
IXYS

IGBT 1700V 26A 200W ISOPLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 26A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 21A
  • Power - Max: 200W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 46ns/260ns
  • Test Condition: 1360V, 21A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione2.224
1700V
26A
200A
5.2V @ 15V, 21A
200W
1.5mJ (off)
Standard
155nC
46ns/260ns
1360V, 21A, 2.7 Ohm, 15V
230ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXDA20N120AS
IXYS

IGBT 1200V 38A 200W TO263AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 3.1mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 20A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.424
1200V
38A
-
3V @ 15V, 20A
200W
3.1mJ (on), 2.4mJ (off)
Standard
70nC
-
600V, 20A, 82 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263
hot HGTP20N60A4
Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 105µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 15ns/73ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione330.120
600V
70A
280A
2.7V @ 15V, 20A
290W
105µJ (on), 150µJ (off)
Standard
142nC
15ns/73ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGP4660D-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione23.268
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
RJH60D7BDPQ-E0#T2
Renesas Electronics America

IGBT 600V 90A 300W TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 700µJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 60ns/180ns
  • Test Condition: 300V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione7.488
600V
90A
-
2.2V @ 15V, 50A
300W
700µJ (on), 1.4mJ (off)
Standard
125nC
60ns/180ns
300V, 50A, 5 Ohm, 15V
25ns
150°C (TJ)
Through Hole
TO-247-3
TO-247
STGB20N40LZ
STMicroelectronics

IGBT 390V 25A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 700ns/4.3µs
  • Test Condition: 300V, 10A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.016
390V
25A
40A
1.6V @ 4V, 6A
150W
-
Logic
24nC
700ns/4.3µs
300V, 10A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
IGW50N65F5FKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 305W
  • Switching Energy: 490µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 21ns/175ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacchetto: TO-247-3
Azione7.664
650V
80A
150A
2.1V @ 15V, 50A
305W
490µJ (on), 160µJ (off)
Standard
120nC
21ns/175ns
400V, 25A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGP15M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 136W
  • Switching Energy: 90µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 24ns/93ns
  • Test Condition: 400V, 15A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 142ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: TO-220-3
Azione19.944
650V
30A
60A
2V @ 15V, 15A
136W
90µJ (on), 450µJ (off)
Standard
45nC
24ns/93ns
400V, 15A, 12 Ohm, 15V
142ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
FGH60N60SMD_F085
Fairchild/ON Semiconductor

IGBT 600V 120A 600W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.59mJ (on), 390µJ (off)
  • Input Type: Standard
  • Gate Charge: 280nC
  • Td (on/off) @ 25°C: 22ns/116ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione10.104
600V
120A
180A
2.5V @ 15V, 60A
600W
1.59mJ (on), 390µJ (off)
Standard
280nC
22ns/116ns
400V, 60A, 3 Ohm, 15V
42ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40T65SHDF_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.22mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 101ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione6.784
650V
80A
120A
1.81V @ 15V, 40A
268W
1.22mJ (on), 440µJ (off)
Standard
68nC
18ns/64ns
400V, 40A, 6 Ohm, 15V
101ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH75T65SQD_F155
Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 375W
  • Switching Energy: 760µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione8.484
650V
150A
300A
-
375W
760µJ (on), 180µJ (off)
Standard
128nC
-
-
43ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXA70R1200NA
IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 350 W
  • Switching Energy: 4.5mJ (on), 5.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 190 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 50A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
pacchetto: -
Request a Quote
1200 V
100 A
-
2.1V @ 15V, 50A
350 W
4.5mJ (on), 5.5mJ (off)
Standard
190 nC
70ns/250ns
600V, 50A, 15Ohm, 15V
-
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
RGW80TK65EGVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 39 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 81 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
pacchetto: -
Azione1.350
650 V
39 A
160 A
1.9V @ 15V, 40A
81 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IKFW50N65DH5XKSA1
Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 59 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
  • Power - Max: 124 W
  • Switching Energy: 1.46mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 23ns/131ns
  • Test Condition: 400V, 50A, 12.2Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
pacchetto: -
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650 V
59 A
160 A
2.25V @ 15V, 50A
124 W
1.46mJ (on), 630µJ (off)
Standard
95 nC
23ns/131ns
400V, 50A, 12.2Ohm, 15V
68 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
DGG4015
Sanken Electric USA Inc.

IGBT WITH GATE PROTECTION DIODE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 425 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 10V, 10A
  • Power - Max: 55 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
pacchetto: -
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425 V
15 A
-
1.7V @ 10V, 10A
55 W
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
HGTP3N60B3R4724
Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGR15N40A
Fairchild Semiconductor

IGBT, 8A, 400V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 4V, 150A
  • Power - Max: 1.25 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 180ns/460ns
  • Test Condition: 300V, 150A, 51Ohm, 4V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSOP (0.130", 3.30mm Width)
  • Supplier Device Package: -
pacchetto: -
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400 V
8 A
150 A
6V @ 4V, 150A
1.25 W
-
Logic
41 nC
180ns/460ns
300V, 150A, 51Ohm, 4V
-
-40°C ~ 150°C (TJ)
Surface Mount
8-TSOP (0.130", 3.30mm Width)
-
HGT1S7N60C3D
Fairchild Semiconductor

IGBT, 14A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 60 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
pacchetto: -
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600 V
14 A
56 A
2V @ 15V, 7A
60 W
-
Standard
38 nC
-
-
25 ns
-40°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
FGD3245G2-F085C
onsemi

ECOSPARK2 IGN-IGBT TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Current - Collector (Ic) (Max): 23 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 23 nC
  • Td (on/off) @ 25°C: 0.9µs/5.4µs
  • Test Condition: 300V, 6.5A, 1000Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
pacchetto: -
Azione8.550
450 V
23 A
-
1.25V @ 4V, 6A
150 W
-
Logic
23 nC
0.9µs/5.4µs
300V, 6.5A, 1000Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
RGCL80TS60GC13
Rohm Semiconductor

IGBT TRENCH FS 600V 65A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
pacchetto: -
Azione1.800
600 V
65 A
160 A
1.8V @ 15V, 40A
148 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G