Pagina 58 - Transistor - IGBT - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - IGBT - Singoli

Record 4.424
Pagina  58/158
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH35U-EP
Infineon Technologies

IGBT 1200V 55A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 210W
  • Switching Energy: 1.06mJ (on), 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione7.152
1200V
55A
60A
2.2V @ 15V, 20A
210W
1.06mJ (on), 620µJ (off)
Standard
130nC
30ns/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXGL50N60BD1
IXYS

IGBT 600V ISOPLUS264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264?
  • Supplier Device Package: ISOPLUS264?
pacchetto: ISOPLUS264?
Azione2.016
600V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS264?
ISOPLUS264?
IXGC12N60C
IXYS

IGBT 600V 15A 85W ISOPLUS220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 85W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
pacchetto: ISOPLUS220?
Azione3.648
600V
15A
48A
2.7V @ 15V, 12A
85W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
hot IXGH16N60B2D1
IXYS

IGBT 600V 40A 150W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacchetto: TO-247-3
Azione24.540
600V
40A
100A
1.95V @ 15V, 12A
150W
160µJ (on), 120µJ (off)
Standard
24nC
18ns/73ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
SGH80N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 80A 195W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 195W
  • Switching Energy: 570µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 175nC
  • Td (on/off) @ 25°C: 23ns/90ns
  • Test Condition: 300V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
pacchetto: TO-3P-3, SC-65-3
Azione7.168
600V
80A
220A
2.6V @ 15V, 40A
195W
570µJ (on), 590µJ (off)
Standard
175nC
23ns/90ns
300V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXXH40N65B4
IXYS

IGBT 650V 120A 455W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 455W
  • Switching Energy: 1.4mJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 28ns/144ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
pacchetto: TO-247-3
Azione2.224
650V
120A
240A
1.8V @ 15V, 40A
455W
1.4mJ (on), 560µJ (off)
Standard
77nC
28ns/144ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
STGB20NB32LZ
STMicroelectronics

IGBT 375V 40A 150W I2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 375V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: 11.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 2.3µs/11.5µs
  • Test Condition: 250V, 20A, 1 kOhm, 4.5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.592
375V
40A
80A
2V @ 4.5V, 20A
150W
11.8mJ (off)
Standard
51nC
2.3µs/11.5µs
250V, 20A, 1 kOhm, 4.5V
-
175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
GPA040A120MN-FD
Global Power Technologies Group

IGBT 1200V 80A 480W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 5.3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 480nC
  • Td (on/off) @ 25°C: 55ns/200ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3PN
pacchetto: TO-3
Azione6.432
1200V
80A
120A
2.6V @ 15V, 40A
480W
5.3mJ (on), 1.1mJ (off)
Standard
480nC
55ns/200ns
600V, 40A, 5 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3PN
hot NGB8206ANSL3G
Littelfuse Inc.

IGBT 390V 20A 150W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione477.864
390V
20A
50A
1.9V @ 4.5V, 20A
150W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
NGTB10N60FG
ON Semiconductor

IGBT 600V 10A TO220F3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
  • Power - Max: 40W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 40ns/145ns
  • Test Condition: 300V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3FS
pacchetto: TO-220-3 Full Pack
Azione7.600
600V
20A
72A
1.7V @ 15V, 10A
40W
-
Standard
55nC
40ns/145ns
300V, 10A, 30 Ohm, 15V
70ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3FS
hot NGB8204ANT4G
Littelfuse Inc.

IGBT 430V 18A 115W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione236.796
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RJH60D5BDPQ-E0#T2
Renesas Electronics America

IGBT 600V 75A 200W TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
  • Power - Max: 200W
  • Switching Energy: 400µJ (on), 810µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 50ns/130ns
  • Test Condition: 300V, 37A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione6.276
600V
75A
-
2.2V @ 15V, 37A
200W
400µJ (on), 810µJ (off)
Standard
78nC
50ns/130ns
300V, 37A, 5 Ohm, 15V
25ns
150°C (TJ)
Through Hole
TO-247-3
TO-247
STGB15M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 136W
  • Switching Energy: 90µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 24ns/93ns
  • Test Condition: 400V, 15A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 142ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione20.832
650V
30A
60A
2V @ 15V, 15A
136W
90µJ (on), 450µJ (off)
Standard
45nC
24ns/93ns
400V, 15A, 12 Ohm, 15V
142ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGH40T65SHD_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
pacchetto: TO-247-3
Azione13.620
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
FGH40T65SH_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
pacchetto: TO-247-3
Azione12.822
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IGT7E20CS
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-5
  • Supplier Device Package: TO-218-5
pacchetto: -
Request a Quote
500 V
25 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-218-5
TO-218-5
STGYA120M65DF2AG
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A
  • Power - Max: 625 W
  • Switching Energy: 1.8mJ (on), 4.41mJ (off)
  • Input Type: Standard
  • Gate Charge: 420 nC
  • Td (on/off) @ 25°C: 66ns/185ns
  • Test Condition: 400V, 120A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 202 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: MAX247™
pacchetto: -
Request a Quote
650 V
160 A
360 A
2.15V @ 15V, 120A
625 W
1.8mJ (on), 4.41mJ (off)
Standard
420 nC
66ns/185ns
400V, 120A, 4.7Ohm, 15V
202 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
MAX247™
IXBH42N250
IXYS

BIMOSFET TRANS 2500V 42A TO-247A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
  • Power - Max: 500 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 72ns/445ns
  • Test Condition: 1250V, 42A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 1.7 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: -
Request a Quote
2500 V
104 A
400 A
3V @ 15V, 42A
500 W
-
Standard
200 nC
72ns/445ns
1250V, 42A, 20Ohm, 15V
1.7 µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXYX200N65B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 410 A
  • Current - Collector Pulsed (Icm): 1100 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1560 W
  • Switching Energy: 5mJ (on), 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 60ns/370ns
  • Test Condition: 400V, 100A, 0Ohm, 15V
  • Reverse Recovery Time (trr): 108 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
pacchetto: -
Request a Quote
650 V
410 A
1100 A
1.7V @ 15V, 100A
1560 W
5mJ (on), 4mJ (off)
Standard
340 nC
60ns/370ns
400V, 100A, 0Ohm, 15V
108 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
RGTH60TS65GC13
Rohm Semiconductor

IGBT TRENCH FIELD 650V 58A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: -
Azione1.770
650 V
58 A
120 A
2.1V @ 15V, 30A
194 W
-
Standard
58 nC
27ns/105ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRGC4067EFX7SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
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600 V
240 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IRG4CC30FB
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
600 V
-
-
1.7V @ 15V, 6A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGY60T120SWD
onsemi

IGBT FIELD STOP 1200V 105A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 105 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15A, 60A
  • Power - Max: 635 W
  • Switching Energy: 5.7mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 174 nC
  • Td (on/off) @ 25°C: 28.8ns/153.6ns
  • Test Condition: 600V, 60A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
pacchetto: -
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1200 V
105 A
240 A
2V @ 15A, 60A
635 W
5.7mJ (on), 2.8mJ (off)
Standard
174 nC
28.8ns/153.6ns
600V, 60A, 4.7Ohm, 15V
200 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
DGTD65T50S1PT
Diodes Incorporated

IGBT 600V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 375 W
  • Switching Energy: 770µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 287 nC
  • Td (on/off) @ 25°C: 58ns/328ns
  • Test Condition: 400V, 50A, 7.9Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: -
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650 V
100 A
200 A
2.4V @ 15V, 50A
375 W
770µJ (on), 550µJ (off)
Standard
287 nC
58ns/328ns
400V, 50A, 7.9Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGW50TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 156 W
  • Switching Energy: 390µJ (on), 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 35ns/102ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: -
Azione1.338
650 V
50 A
100 A
1.9V @ 15V, 25A
156 W
390µJ (on), 430µJ (off)
Standard
73 nC
35ns/102ns
400V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGTH60TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 58A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: -
Azione1.785
650 V
58 A
120 A
2.1V @ 15V, 30A
194 W
-
Standard
58 nC
27ns/105ns
400V, 30A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGW50NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 57A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 57 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 165 W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 31ns/119ns
  • Test Condition: 400V, 12.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 71 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
pacchetto: -
Azione3.000
650 V
57 A
100 A
1.9V @ 15V, 25A
165 W
110µJ (on), 230µJ (off)
Standard
73 nC
31ns/119ns
400V, 12.5A, 10Ohm, 15V
71 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
FGH40N60SMDF-F085
onsemi

IGBT FIELD STOP 600V 80A TO247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349 W
  • Switching Energy: 1.3mJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 122 nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: -
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600 V
80 A
120 A
2.5V @ 15V, 40A
349 W
1.3mJ (on), 260µJ (off)
Standard
122 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
90 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3