Pagina 120 - Transistor - IGBT - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559-802
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - IGBT - Singoli

Record 4.424
Pagina  120/158
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH73K10EF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 360nC
  • Td (on/off) @ 25°C: 63ns/267ns
  • Test Condition: 600V, 75A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione2.560
1200V
-
-
1.6V @ 15V, 20A
-
-
Standard
360nC
63ns/267ns
600V, 75A, 4.7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG4PC60U-PPBF
Infineon Technologies

IGBT 600V 75A 520W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 280µJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 39ns/200ns
  • Test Condition: 480V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacchetto: TO-247-3
Azione3.168
600V
75A
300A
2V @ 15V, 40A
520W
280µJ (on), 1.1mJ (off)
Standard
310nC
39ns/200ns
480V, 40A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4BAC50W-S
Infineon Technologies

IGBT 600V 55A 200W SUPER 220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 80µJ (on), 320µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/120ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: Super-220?-3 (Straight Leads)
  • Supplier Device Package: SUPER-220? (TO-273AA)
pacchetto: Super-220?-3 (Straight Leads)
Azione50.772
600V
55A
-
2.3V @ 15V, 27A
200W
80µJ (on), 320µJ (off)
Standard
-
46ns/120ns
-
-
-
Through Hole
Super-220?-3 (Straight Leads)
SUPER-220? (TO-273AA)
IXGH12N60C
IXYS

IGBT 600V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacchetto: TO-247-3
Azione3.360
600V
24A
48A
2.7V @ 15V, 12A
100W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGR120N60B
IXYS

IGBT 600V 156A 520W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 156A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: 520W
  • Switching Energy: 2.4mJ (on), 5.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 60ns/200ns
  • Test Condition: 480V, 100A, 2.4 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione3.216
600V
156A
300A
2.1V @ 15V, 100A
520W
2.4mJ (on), 5.5mJ (off)
Standard
350nC
60ns/200ns
480V, 100A, 2.4 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGX50N60B2D1
IXYS

IGBT 600V 75A 400W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 400W
  • Switching Energy: 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 18ns/190ns
  • Test Condition: 480V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
pacchetto: TO-247-3
Azione2.064
600V
75A
200A
2V @ 15V, 40A
400W
550µJ (off)
Standard
140nC
18ns/190ns
480V, 40A, 5 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGA16N60C2
IXYS

IGBT 600V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 16ns/75ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.232
600V
40A
100A
3V @ 15V, 12A
150W
160µJ (on), 90µJ (off)
Standard
25nC
16ns/75ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
SGH15N60RUFTU
Fairchild/ON Semiconductor

IGBT 600V 24A 160W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 356µJ (off)
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 17ns/44ns
  • Test Condition: 300V, 15A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
pacchetto: TO-3P-3, SC-65-3
Azione7.936
600V
24A
45A
2.8V @ 15V, 15A
160W
320µJ (on), 356µJ (off)
Standard
42nC
17ns/44ns
300V, 15A, 13 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IRG7PH42U-EP
Infineon Technologies

IGBT 1200V 90A 385W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 385W
  • Switching Energy: 2.11mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 25ns/229ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 153ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione5.920
1200V
90A
90A
2V @ 15V, 30A
385W
2.11mJ (on), 1.18mJ (off)
Standard
157nC
25ns/229ns
600V, 30A, 10 Ohm, 15V
153ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IGB20N60H3
Infineon Technologies

IGBT 600V 40A 170W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.504
600V
40A
80A
2.4V @ 15V, 20A
170W
690µJ
Standard
120nC
16ns/194ns
400V, 20A, 14.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IXYH40N65C3
IXYS

IGBT 650V 80A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 860µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 26ns/106ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
pacchetto: TO-247-3
Azione3.248
650V
80A
180A
2.2V @ 15V, 40A
300W
860µJ (on), 400µJ (off)
Standard
70nC
26ns/106ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
hot APT15GP60BDQ1G
Microsemi Corporation

IGBT 600V 56A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
pacchetto: TO-247-3
Azione5.104
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 120µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXBP5N160G
IXYS

IGBT 1600V 5.7A 68W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 5.7A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A
  • Power - Max: 68W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 3A, 47 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-220-3
Azione4.336
1600V
5.7A
-
7.2V @ 15V, 3A
68W
-
Standard
26nC
-
960V, 3A, 47 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-247AD
hot FGH40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.19mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 24ns/112ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione12.060
600V
80A
120A
2.4V @ 15V, 40A
290W
1.19mJ (on), 460µJ (off)
Standard
120nC
24ns/112ns
400V, 40A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F6BDPQ-A0#T0
Renesas Electronics America

IGBT 600V 85A 297.6W TO-247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
  • Power - Max: 297.6W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 58ns/131ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
pacchetto: TO-247-3
Azione4.160
600V
85A
-
1.75V @ 15V, 45A
297.6W
-
Standard
-
58ns/131ns
400V, 30A, 5 Ohm, 15V
25ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
IRG7PH35UDPBF
Infineon Technologies

IGBT 1200V 50A 180W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 180W
  • Switching Energy: 1.06mJ (on), 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 105ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacchetto: TO-247-3
Azione7.040
1200V
50A
60A
2.2V @ 15V, 20A
180W
1.06mJ (on), 620µJ (off)
Standard
85nC
30ns/160ns
600V, 20A, 10 Ohm, 15V
105ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXYH75N65C3H1
IXYS

IGBT 650V 170A 750W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 2.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 123nC
  • Td (on/off) @ 25°C: 27ns/93ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
pacchetto: TO-247-3
Azione4.432
650V
170A
360A
2.3V @ 15V, 60A
750W
2.8mJ (on), 1mJ (off)
Standard
123nC
27ns/93ns
400V, 60A, 3 Ohm, 15V
150ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
STGF35HF60W
STMicroelectronics

IGBT 600V 19A 40W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 40W
  • Switching Energy: 290µJ (on), 185µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 30ns/175ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
pacchetto: TO-220-3 Full Pack
Azione17.028
600V
19A
150A
2.5V @ 15V, 20A
40W
290µJ (on), 185µJ (off)
Standard
140nC
30ns/175ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
NGTB40N120S3WG
ON Semiconductor

IGBT 1.2KV 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 2.2mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 212nC
  • Td (on/off) @ 25°C: 12ns/145ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 163ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione8.340
1200V
160A
160A
1.95V @ 15V, 40A
454W
2.2mJ (on), 1.1mJ (off)
Standard
212nC
12ns/145ns
600V, 40A, 10 Ohm, 15V
163ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot APT25GT120BRG
Microsemi Corporation

IGBT 1200V 54A 347W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
  • Power - Max: 347W
  • Switching Energy: 930µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 14ns/150ns
  • Test Condition: 800V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
pacchetto: TO-247-3
Azione4.928
1200V
54A
75A
3.7V @ 15V, 25A
347W
930µJ (on), 720µJ (off)
Standard
170nC
14ns/150ns
800V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
SIGC12T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IGTH20N40AD
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3 Isolated Tab, TO-218AC
  • Supplier Device Package: TO-218 Isolated
pacchetto: -
Request a Quote
400 V
20 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-218-3 Isolated Tab, TO-218AC
TO-218 Isolated
IXBH32N300HV
IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 280 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 400 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
pacchetto: -
Request a Quote
3000 V
80 A
280 A
3.2V @ 15V, 32A
400 W
-
Standard
142 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
SIGC42T60UNX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGWS00TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 88 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 245 W
  • Switching Energy: 980µJ (on), 910µJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 46ns/145ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
pacchetto: -
Azione1.800
650 V
88 A
150 A
2V @ 15V, 50A
245 W
980µJ (on), 910µJ (off)
Standard
108 nC
46ns/145ns
400V, 50A, 10Ohm, 15V
88 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
STGP20H65FB2
STMicroelectronics

IGBT 600V 40A 167W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RJP63F3DPP-Z0-T2
Renesas Electronics Corporation

N CH IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DGTD65T40S2PT
Diodes Incorporated

IGBT 600V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: 500µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 6ns/55ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: -
Request a Quote
650 V
80 A
120 A
2.3V @ 15V, 40A
230 W
500µJ (on), 400µJ (off)
Standard
60 nC
6ns/55ns
400V, 40A, 10Ohm, 15V
60 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247