Pagina 112 - Transistor - IGBT - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - IGBT - Singoli

Record 4.424
Pagina  112/158
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4615DTRLPBF
Infineon Technologies

IGBT 600V 23A 99W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
  • Power - Max: 99W
  • Switching Energy: 70µJ (on), 145µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 30ns/95ns
  • Test Condition: 400V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.720
600V
23A
24A
1.85V @ 15V, 8A
99W
70µJ (on), 145µJ (off)
Standard
19nC
30ns/95ns
400V, 8A, 47 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4RC20FTR
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione393.960
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGH38N60
IXYS

IGBT 600V 76A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 152A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A
  • Power - Max: 200W
  • Switching Energy: 9mJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 30ns/600ns
  • Test Condition: 480V, 38A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacchetto: TO-247-3
Azione5.008
600V
76A
152A
1.8V @ 15V, 38A
200W
9mJ (off)
Standard
125nC
30ns/600ns
480V, 38A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot HGT1S14N36G3VLT
Fairchild/ON Semiconductor

IGBT 390V 18A 100W TO262AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: -/7µs
  • Test Condition: 300V, 7A, 25 Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262-3
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione13.140
390V
18A
-
2.2V @ 5V, 14A
100W
-
Logic
24nC
-/7µs
300V, 7A, 25 Ohm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262-3
IKQ40N120CT2XKSA1
Infineon Technologies

IGBT HS SW 1200V 40A TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 3.1mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 32ns/328ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
pacchetto: TO-247-3
Azione5.264
1200V
80A
160A
2.15V @ 15V, 40A
500W
3.1mJ (on), 2.9mJ (off)
Standard
190nC
32ns/328ns
600V, 40A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IGW40N65F5AXKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 350µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacchetto: TO-247-3
Azione4.048
650V
74A
120A
2.1V @ 15V, 40A
250W
350µJ (on), 100µJ (off)
Standard
95nC
19ns/165ns
400V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGB20N65S5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.568
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGR35N120B
IXYS

IGBT 1200V 70A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
  • Power - Max: 200W
  • Switching Energy: 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/180ns
  • Test Condition: 960V, 35A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione4.832
1200V
70A
140A
3.3V @ 15V, 35A
200W
3.8mJ (off)
Standard
170nC
50ns/180ns
960V, 35A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXXH30N60B3
IXYS

IGBT 600V TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 115A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
  • Power - Max: 270W
  • Switching Energy: 550µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 39nC
  • Td (on/off) @ 25°C: 23ns/97ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacchetto: TO-247-3
Azione2.768
600V
60A
115A
1.85V @ 15V, 24A
270W
550µJ (on), 500µJ (off)
Standard
39nC
23ns/97ns
400V, 24A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
NGTB40N135IHRWG
ON Semiconductor

IGBT 1350V 80A 394W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 394W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/250ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione4.544
1350V
80A
120A
2.7V @ 15V, 40A
394W
1.3mJ (off)
Standard
234nC
-/250ns
600V, 40A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot IKW75N60TA
Infineon Technologies

IGBT 600V 80A 428W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428W
  • Switching Energy: 4.5mJ
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 121ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacchetto: TO-247-3
Azione103.464
600V
80A
225A
2V @ 15V, 75A
428W
4.5mJ
Standard
470nC
33ns/330ns
400V, 75A, 5 Ohm, 15V
121ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRGPS46160DPBF
Infineon Technologies

IGBT 600V 240A 750W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 5.75mJ (on), 3.43mJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 80ns/190ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
pacchetto: TO-247-3
Azione103.464
600V
240A
360A
2.05V @ 15V, 120A
750W
5.75mJ (on), 3.43mJ (off)
Standard
240nC
80ns/190ns
400V, 120A, 4.7 Ohm, 15V
130ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
IRG4BC30KD-SPBF
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.800
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IHW30N65R5XKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 176W
  • Switching Energy: 850µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 153nC
  • Td (on/off) @ 25°C: 29ns/220ns
  • Test Condition: 400V, 30A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacchetto: TO-247-3
Azione8.388
650V
60A
90A
1.7V @ 15V, 30A
176W
850µJ (on), 240µJ (off)
Standard
153nC
29ns/220ns
400V, 30A, 13 Ohm, 15V
95ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGWA50M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 375W
  • Switching Energy: 880µJ (on), 1.57mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 42ns/130ns
  • Test Condition: 400V, 50A, 6.8 Ohm, 15V
  • Reverse Recovery Time (trr): 162ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
pacchetto: TO-247-3
Azione15.336
650V
80A
150A
2.1V @ 15V, 50A
375W
880µJ (on), 1.57mJ (off)
Standard
150nC
42ns/130ns
400V, 50A, 6.8 Ohm, 15V
162ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXYA20N65C3-TRL
IXYS

IXYA20N65C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 430µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
pacchetto: -
Request a Quote
650 V
50 A
105 A
2.5V @ 15V, 20A
230 W
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
IGC99T120T8RLX1SA3
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
1200 V
-
300 A
1.97V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IRGC50B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
1200 V
50 A
-
3.5V @ 15V, 50A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGAF20S65AQ
onsemi

IGBT 650V 20A TO-3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 75 W
  • Switching Energy: 345µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 18ns/102ns
  • Test Condition: 400V, 10A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 235 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF-3
pacchetto: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
75 W
345µJ (on), 95µJ (off)
Standard
38 nC
18ns/102ns
400V, 10A, 23Ohm, 15V
235 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
STK762-921G-E
onsemi

IGBT ACTIVE FILTER POWER IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKWH60N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 100A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
  • Power - Max: 240 W
  • Switching Energy: 1.82mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 174 nC
  • Td (on/off) @ 25°C: 35ns/311ns
  • Test Condition: 400V, 60A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
pacchetto: -
Azione1.314
650 V
100 A
180 A
1.85V @ 15V, 60A
240 W
1.82mJ (on), 850µJ (off)
Standard
174 nC
35ns/311ns
400V, 60A, 15Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IXA20I1200PZ-TUB
IXYS

DISC IGBT XPT-GENX3 TO-263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165 W
  • Switching Energy: 1.6mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 48ns/230ns
  • Test Condition: 600V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
pacchetto: -
Request a Quote
1200 V
38 A
-
2.1V @ 15V, 15A
165 W
1.6mJ (on), 1.7mJ (off)
Standard
47 nC
48ns/230ns
600V, 15A, 56Ohm, 15V
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
FGF65A3L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 30A
  • Power - Max: 72 W
  • Switching Energy: 600µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
pacchetto: -
Request a Quote
650 V
50 A
90 A
1.96V @ 15V, 30A
72 W
600µJ (on), 600µJ (off)
Standard
60 nC
30ns/90ns
400V, 30A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IRGC50B60PB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
600 V
-
-
1.65V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
RGTV00TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 95A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 276 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacchetto: -
Request a Quote
650 V
95 A
200 A
1.9V @ 15V, 50A
276 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
CMFCLGF100X120BTAM-AS
Microchip Technology

CMFCLGF100X120BTAM-AS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGTD8P50G1
Harris Corporation

IGBT 500V 12A IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 8A
  • Power - Max: 66 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: IPAK
pacchetto: -
Request a Quote
500 V
12 A
18 A
3.7V @ 15V, 8A
66 W
-
Standard
30 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
STGB50H65FB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 910µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 28ns/115ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
pacchetto: -
Request a Quote
650 V
86 A
150 A
2V @ 15V, 50A
272 W
910µJ (on), 580µJ (off)
Standard
151 nC
28ns/115ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)