Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.216 |
|
MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | - | 79W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220
|
pacchetto: Super-220?-3 (Straight Leads) |
Azione11.916 |
|
MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 7660pF @ 25V | ±16V | - | 300W (Tc) | 4 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220? (TO-273AA) | Super-220?-3 (Straight Leads) |
||
Vishay Siliconix |
MOSFET P-CH 40V 8.7A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione228.900 |
|
MOSFET (Metal Oxide) | 40V | 8.7A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 50nC @ 5V | - | ±20V | - | 1.5W (Ta) | 15.5 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 30V 7.8A SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione3.088 |
|
MOSFET (Metal Oxide) | 30V | 7.8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 970pF @ 24V | ±20V | - | 1W (Ta) | 10 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione72.528 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | 670pF @ 25V | ±20V | - | 42W (Tc) | 160 mOhm @ 5.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione452.232 |
|
MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 600 mOhm @ 4.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 120A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.376 |
|
MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | ±20V | - | 160W (Tc) | 5.1 mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 3.2A TO251-3
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione7.936 |
|
MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 3.9V @ 135µA | 17nC @ 10V | 400pF @ 25V | ±20V | - | 38W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
IXYS |
MOSFET N-CH 800V 15A TO-268
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione2.976 |
|
MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 4.5V @ 4mA | 90nC @ 10V | 4300pF @ 25V | ±20V | - | 300W (Tc) | 600 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO263
|
pacchetto: TO-220-3 |
Azione6.736 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 74nC @ 10V | 3440pF @ 100V | ±30V | - | 463W (Tc) | 250 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 64A TO-251
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.912 |
|
MOSFET (Metal Oxide) | 55V | 64A (Tc) | - | 4V @ 25µA | - | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.840 |
|
MOSFET (Metal Oxide) | 40V | 16.8A (Ta), 70A (Tc) | 4.5V, 10V | 3V @ 250µA | 29.1nC @ 10V | 1895pF @ 30V | ±20V | - | 2.6W (Ta) | 7.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 2000V 3A TO-247
|
pacchetto: TO-247-3 |
Azione6.036 |
|
MOSFET (Metal Oxide) | 2000V | 3A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 1860pF @ 25V | ±20V | - | 520W (Tc) | 8 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Diodes Incorporated |
MOSFET P-CH 20V 6.6A 6UDFN
|
pacchetto: 6-UFDFN Exposed Pad |
Azione3.136 |
|
MOSFET (Metal Oxide) | 20V | 6.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 44nC @ 8V | 2200pF @ 10V | ±8V | - | 740mW (Ta) | 24 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1616-6 | 6-UFDFN Exposed Pad |
||
STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione17.976 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7400pF @ 25V | ±20V | - | 330W (Tc) | 2.6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 650V 20A
|
pacchetto: TO-220-3 Full Pack |
Azione7.728 |
|
MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1440pF @ 100V | ±25V | - | 30W (Tc) | 180 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 60V 8A 1212-8 PPAK
|
pacchetto: PowerPAK? 1212-8 |
Azione60.372 |
|
MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | 600pF @ 30V | ±20V | - | 3.2W (Ta), 19.8W (Tc) | 115 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8A 6-SSOT
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione566.292 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta), 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 18nC @ 10V | 1040pF @ 15V | ±20V | - | 1.6W (Ta) | 16 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 4V @ 1.1mA | 24 nC @ 10 V | 1261 pF @ 400 V | ±30V | - | 106W (Tc) | 250mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 700V 4.5A TO251-3
|
pacchetto: - |
Azione12 |
|
MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 3.5V @ 40µA | 4.8 nC @ 400 V | 174 pF @ 400 V | ±16V | - | 25W (Tc) | 1.2Ohm @ 900mA, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO220AB
|
pacchetto: - |
Azione2.529 |
|
MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 4V @ 250µA | 39 nC @ 10 V | 1100 pF @ 25 V | ±30V | - | 125W (Tc) | 1.2Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CHANNEL 600V
|
pacchetto: - |
Azione4.920 |
|
MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4V @ 250µA | 18 nC @ 10 V | 350 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 4.4Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100A 8SOP
|
pacchetto: - |
Azione33.024 |
|
MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.1V @ 500µA | 86 nC @ 10 V | 6410 pF @ 15 V | ±20V | - | 830mW (Ta), 116W (Tc) | 2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET N-CH 40V 100A PWRDI5060-8
|
pacchetto: - |
Azione5.814 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4V @ 250µA | 79.5 nC @ 10 V | 6968 pF @ 20 V | ±20V | - | 3.03W | 1.8mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | - | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | 1500 pF @ 15 V | - | - | - | 40mOhm @ 3.2A, 4.5V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET P-CH 20V 3.3A SOT-363
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 27
|
pacchetto: - |
Azione360 |
|
SiC (Silicon Carbide Junction Transistor) | 650 V | 58A (Tc) | 18V | 5V @ 3mA | 65 nC @ 18 V | 2288 pF @ 400 V | +25V, -10V | - | 156W (Tc) | 38mOhm @ 29A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
onsemi |
MOSFET N-CH 60V 120A TO220-3
|
pacchetto: - |
Azione2.175 |
|
MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4V @ 250µA | 99 nC @ 10 V | 8030 pF @ 30 V | ±20V | - | 205W (Tc) | 3.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO252 T&R
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 7.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 14 nC @ 10 V | 674 pF @ 20 V | ±20V | - | 2.14W (Ta) | 51mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |