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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  97/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB193408SVV1XWSA1
Infineon Technologies

IC FET RF LDMOS H-34275G-6/2

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.65A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: H-34275G-6/2
  • Supplier Device Package: H-34275G-6/2
pacchetto: H-34275G-6/2
Azione6.544
1.99GHz
19dB
30V
-
-
2.65A
80W
65V
H-34275G-6/2
H-34275G-6/2
PTVA035002EVV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.216
-
-
-
-
-
-
-
-
-
-
PTFC261402FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.632
2.69GHz
18dB
28V
-
-
900mA
28W
65V
-
-
PTF180101M V1
Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-RFP-10
pacchetto: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Azione6.528
1.99GHz
16.5dB
28V
1µA
-
180mA
10W
65V
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
PG-RFP-10
BLF7G27L-150P,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 37A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione3.568
2.5GHz ~ 2.7GHz
16.5dB
28V
37A
-
1.2A
30W
65V
SOT539A
SOT539A
BF245A,112
NXP

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 6.5mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.912
100MHz
-
15V
6.5mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MRF6V4300NBR1
NXP

FET RF 110V 450MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione2.384
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-272BB
TO-272 WB-4
AFT26HW050GSR3
NXP

FET RF 2CH 65V 2.69GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS
  • Supplier Device Package: NI-780GS
pacchetto: NI-780GS
Azione5.296
2.69GHz
14.2dB
28V
-
-
100mA
9W
65V
NI-780GS
NI-780GS
CLF1G0035-100,112
Ampleon USA Inc.

RF FET HEMT 150V 12DB SOT467C

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 12dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 330mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
pacchetto: SOT467C
Azione3.808
3GHz
12dB
50V
-
-
330mA
100W
150V
SOT467C
SOT467C
NPT35015
M/A-Com Technology Solutions

HEMT N-CH 28V 18W 3300-3800MHZ

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 10.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1.7W
  • Voltage - Rated: 100V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione6.880
3.3GHz ~ 3.8GHz
10.5dB
28V
5A
-
200mA
1.7W
100V
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC
CGHV59070F
Cree/Wolfspeed

RF MOSFET HEMT 50V 440224

  • Transistor Type: HEMT
  • Frequency: 4.4GHz ~ 5.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 76W
  • Voltage - Rated: 150V
  • Package / Case: 440224
  • Supplier Device Package: 440224
pacchetto: 440224
Azione5.648
4.4GHz ~ 5.9GHz
13.3dB
50V
-
-
150mA
76W
150V
440224
440224
PD85015TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
pacchetto: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Azione6.976
870MHz
16dB
13.6V
5A
-
150mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
SD2932W
STMicroelectronics

IC TRANS RF HF/VHF/UHF

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 16dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 300W
  • Voltage - Rated: 125V
  • Package / Case: M244
  • Supplier Device Package: M244
pacchetto: M244
Azione6.496
175MHz
16dB
50V
40A
-
500mA
300W
125V
M244
M244
CE3512K2
CEL

RF FET 4V 12GHZ 4MICROX

  • Transistor Type: pHEMT FET
  • Frequency: 12GHz
  • Gain: 13.7dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-Micro-X
  • Supplier Device Package: 4-Micro-X
pacchetto: 4-Micro-X
Azione24.762
12GHz
13.7dB
2V
15mA
0.5dB
10mA
125mW
4V
4-Micro-X
4-Micro-X
hot MRFE6VP5600HR5
NXP

FET RF 2CH 130V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
pacchetto: NI-1230
Azione3.504
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230
NI-1230
CGHV27030S
Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 20.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 30W
  • Voltage - Rated: 125V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
pacchetto: 12-VFDFN Exposed Pad
Azione20.868
6GHz
20.4dB
50V
-
-
130mA
30W
125V
12-VFDFN Exposed Pad
12-DFN (4x3)
hot BF862,215
NXP

JFET N-CH 20V 25MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione13.188
-
-
-
25mA
-
-
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
ICPB2002-1-110I
Microchip Technology

DC-12 GHZ 12W DISCRETE GAN HEMT

  • Transistor Type: GaN HEMT
  • Frequency: 12GHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 125 mA
  • Power - Output: 12W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
12GHz
10dB
28 V
1A
-
125 mA
12W
28 V
Die
Die
IGN0912LM500
Integra Technologies Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione30
-
-
-
-
-
-
-
-
-
-
PTVA104501EH-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA030121EA-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA120501EA-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA127002EV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 16dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 700W
  • Voltage - Rated: 105 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
pacchetto: -
Azione291
1.2GHz ~ 1.4GHz
16dB
50 V
10µA
-
150 mA
700W
105 V
H-36275-4
H-36275-4
BCP240C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 9dB
  • Voltage - Test: 8 V
  • Current Rating: 1.03A
  • Noise Figure: -
  • Current - Test: 360 mA
  • Power - Output: 33dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
6GHz ~ 18GHz
9dB
8 V
1.03A
-
360 mA
33dBm
12 V
Die
Die
BLP9LA25SGXY
Ampleon USA Inc.

RF MOSFET LDMOS 13.6V TO270

  • Transistor Type: LDMOS
  • Frequency: 941MHz
  • Gain: 18.4dB
  • Voltage - Test: 13.6 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 25W
  • Voltage - Rated: 40 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
pacchetto: -
Request a Quote
941MHz
18.4dB
13.6 V
1.4µA
-
500 mA
25W
40 V
TO-270BA
TO-270-2G-1
A3G23H500W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 14.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 80W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780-4S2S
  • Supplier Device Package: NI-780-4S2S
pacchetto: -
Request a Quote
2.3GHz ~ 2.4GHz
14.3dB
48 V
-
-
300 mA
80W
125 V
NI-780-4S2S
NI-780-4S2S
UF28100V
MACOM Technology Solutions

RF MOSFET N-CHANNEL 28V 8L-FLG

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 100MHz ~ 500MHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: 8L-FLG
  • Supplier Device Package: 8L-FLG
pacchetto: -
Request a Quote
100MHz ~ 500MHz
10dB
28 V
12A
-
600 mA
100W
65 V
8L-FLG
8L-FLG
GTVA262711FA-V2-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-87265J-2

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320 mA
  • Power - Output: 70W
  • Voltage - Rated: 125 V
  • Package / Case: H-87265J-2
  • Supplier Device Package: H-87265J-2
pacchetto: -
Azione105
2.62GHz ~ 2.69GHz
18dB
48 V
-
-
320 mA
70W
125 V
H-87265J-2
H-87265J-2