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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  81/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212401F V4
Infineon Technologies

IC FET RF LDMOS 240W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione5.952
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
PTFA210601F V4
Infineon Technologies

IC FET RF LDMOS 60W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione3.216
2.14GHz
16dB
28V
10µA
-
550mA
12W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
MRF6V12500HSR3
NXP

FET RF 110V 1.03GHZ NI780HS

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione4.592
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780S
NI-780S
MRF6S21190HSR3
NXP

FET RF 68V 2.17GHZ NI880S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 54W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
pacchetto: NI-880S
Azione5.856
2.11GHz ~ 2.17GHz
16dB
28V
-
-
1.6A
54W
68V
NI-880S
NI-880S
hot MRF6S19060GNR1
NXP

FET RF 68V 1.93GHZ TO-270-2 GW

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610mA
  • Power - Output: 12W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
pacchetto: TO-270-2 Gull Wing
Azione12.036
1.93GHz
16dB
28V
-
-
610mA
12W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
MRF5S19090HSR3
NXP

FET RF 65V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione7.840
1.93GHz ~ 1.99GHz
14.5dB
28V
-
-
850mA
18W
65V
NI-780S
NI-780S
BF244B
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 50mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.560
100MHz
-
15V
50mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N3819
Fairchild/ON Semiconductor

JFET N-CH 25V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 50mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione9.132
-
-
-
50mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLF177,112
Ampleon USA Inc.

RF FET NCHA 125V 19DB SOT121B

  • Transistor Type: N-Channel
  • Frequency: 108MHz
  • Gain: 19dB
  • Voltage - Test: 50V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 150W
  • Voltage - Rated: 125V
  • Package / Case: SOT-121B
  • Supplier Device Package: CRFM4
pacchetto: SOT-121B
Azione6.544
108MHz
19dB
50V
16A
-
700mA
150W
125V
SOT-121B
CRFM4
PTFB212503FLV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.1dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: H-34288-4/2
  • Supplier Device Package: H-34288-4/2
pacchetto: H-34288-4/2
Azione6.656
2.17GHz
18.1dB
30V
-
-
1.85A
55W
65V
H-34288-4/2
H-34288-4/2
BLC9G22XS-400AVTY
Ampleon USA Inc.

BLC9G22XS-400AVT/SOT1258/REELD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.288
-
-
-
-
-
-
-
-
-
-
AFT23H200-4S2LR6
NXP

FET RF 2CH 65V 2.3GHZ NI1230-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 15.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
pacchetto: NI-1230-4LS2L
Azione3.872
2.3GHz
15.3dB
28V
-
-
500mA
45W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF2425M7L100J
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
pacchetto: SOT-502A
Azione3.168
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502A
SOT502A
PD55015STR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14dB
  • Voltage - Test: 12.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
pacchetto: PowerSO-10 Exposed Bottom Pad
Azione6.528
500MHz
14dB
12.5V
5A
-
150mA
15W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
BLM8G0710S-60PBY
Ampleon USA Inc.

RF FET LDMOS 65V 36.2DB SOT12112

  • Transistor Type: LDMOS (Dual)
  • Frequency: 957.5MHz
  • Gain: 36.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-2
  • Supplier Device Package: 16-HSOPF
pacchetto: SOT-1211-2
Azione7.728
957.5MHz
36.2dB
28V
-
-
60mA
6W
65V
SOT-1211-2
16-HSOPF
BLP8G27-10Z
Ampleon USA Inc.

RF FET LDMOS 65V 17DB 16VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 110mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-HVSON (4x6)
pacchetto: 16-VDFN Exposed Pad
Azione2.720
2.14GHz
17dB
28V
-
-
110mA
2W
65V
16-VDFN Exposed Pad
16-HVSON (4x6)
BLF888EU
Ampleon USA Inc.

RF FET LDMOS 104V 17DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 600MHz ~ 700MHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 750W
  • Voltage - Rated: 104V
  • Package / Case: SOT539A
  • Supplier Device Package: -
pacchetto: SOT539A
Azione5.888
600MHz ~ 700MHz
17dB
50V
-
-
600mA
750W
104V
SOT539A
-
CGHV60170D
Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 260mA
  • Power - Output: 170W
  • Voltage - Rated: 150V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione5.456
6GHz
17dB
50V
-
-
260mA
170W
150V
Die
Die
BLF8G09LS-400PGWJ
Ampleon USA Inc.

RF FET LDMOS 65V 20.6DB SOT1242C

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 718.5MHz ~ 725.5MHz
  • Gain: 20.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 3.4A
  • Power - Output: 95W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1242C
  • Supplier Device Package: CDFM8
pacchetto: SOT-1242C
Azione5.456
718.5MHz ~ 725.5MHz
20.6dB
28V
-
-
3.4A
95W
65V
SOT-1242C
CDFM8
LET9045
STMicroelectronics

TRANSISTOR RF POWER N-CH 80V 9A

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 59W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
pacchetto: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Azione6.948
960MHz
17.5dB
28V
9A
-
300mA
59W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
WP4806025UH
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 48V 360BH

  • Transistor Type: GaN HEMT
  • Frequency: 5GHz
  • Gain: 18.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 25W
  • Voltage - Rated: 160 V
  • Package / Case: 360BH
  • Supplier Device Package: 360BH
pacchetto: -
Azione18
5GHz
18.9dB
48 V
-
-
100 mA
25W
160 V
360BH
360BH
BLC10G19LS-250WTY
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1271-2

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19.3dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1271-2
  • Supplier Device Package: SOT1271-2
pacchetto: -
Request a Quote
1.93GHz ~ 1.99GHz
19.3dB
28 V
1.4µA
-
1.4 A
250W
65 V
SOT-1271-2
SOT1271-2
B10G3741N55DZ
Ampleon USA Inc.

RF MOSFET LDMOS 20QFN

  • Transistor Type: LDMOS
  • Frequency: 3.7GHz ~ 4.1GHz
  • Gain: 34.8dB
  • Voltage - Test: -
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 47.6dBm
  • Voltage - Rated: 65 V
  • Package / Case: 20-QFN Exposed Pad
  • Supplier Device Package: 20-PQFN (8x8)
pacchetto: -
Azione2.304
3.7GHz ~ 4.1GHz
34.8dB
-
1.4µA
-
-
47.6dBm
65 V
20-QFN Exposed Pad
20-PQFN (8x8)
BLP9H10S-850AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 50V OMP1230

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 617MHz ~ 960MHz
  • Gain: 17.8dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 850W
  • Voltage - Rated: 105 V
  • Package / Case: OMP-1230-6F-1
  • Supplier Device Package: OMP-1230-6F-1
pacchetto: -
Request a Quote
617MHz ~ 960MHz
17.8dB
50 V
2.8µA
-
1.4 A
850W
105 V
OMP-1230-6F-1
OMP-1230-6F-1
B11G2327N71DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 28V 36QFN

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 30dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
pacchetto: -
Azione504
2.3GHz ~ 2.7GHz
30dB
28 V
1.4µA
-
-
-
65 V
36-QFN Exposed Pad
36-PQFN (12x7)
2SK853A-1-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLF8G27LS-140V
Ampleon USA Inc.

RF MOSFET LDMOS 32V LDMOST

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 17.4dB
  • Voltage - Test: 32 V
  • Current Rating: 4.2µA
  • Noise Figure: -
  • Current - Test: 1.3 A
  • Power - Output: 140W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1120B
  • Supplier Device Package: LDMOST
pacchetto: -
Request a Quote
2.6GHz ~ 2.7GHz
17.4dB
32 V
4.2µA
-
1.3 A
140W
65 V
SOT-1120B
LDMOST
BLP9LA25SZ
Ampleon USA Inc.

RF MOSFET LDMOS SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 941MHz
  • Gain: 18.4dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 25W
  • Voltage - Rated: 13.6 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
pacchetto: -
Azione168
1MHz ~ 941MHz
18.4dB
-
-
-
-
25W
13.6 V
SOT-1482-1
SOT-1482-1