Pagina 73 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  73/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA192001EV4T350XWSA1
Infineon Technologies

IC RF FET LDMOS H-36260-2

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.096
-
-
-
-
-
-
-
-
-
-
PTFA192001E1V4R250XTMA1
Infineon Technologies

IC RF POWER TRANSISTOR

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15.9dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-33288-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione2.528
1.99GHz
15.9dB
30V
-
-
1.8A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-33288-2
PTFB191501EV1R250XTMA1
Infineon Technologies

FET RF LDMOS 150W H36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
pacchetto: 2-Flatpack, Fin Leads
Azione4.032
1.99GHz
18dB
30V
-
-
1.2A
150W
65V
2-Flatpack, Fin Leads
H-36248-2
PTFA092201FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 220W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione4.928
960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
BLC8G24LS-240AVJ
NXP

TRANS RF 240W 65V LDMOS SOT1252

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
pacchetto: SOT-1252-1
Azione4.096
2.3GHz ~ 2.4GHz
15dB
30V
-
-
800mA
63W
65V
SOT-1252-1
SOT1252-1
BLF8G24LS-200P,118
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione3.136
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
MRF8P8300HSR5
NXP

FET RF 2CH 70V 820MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 820MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 96W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
pacchetto: NI-1230S
Azione2.192
820MHz
20.9dB
28V
-
-
2A
96W
70V
NI-1230S
NI-1230S
BLF7G21L-160P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 32.5A
  • Noise Figure: -
  • Current - Test: 1.08A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: LDMOST
pacchetto: SOT-1121A
Azione3.376
1.93GHz ~ 1.99GHz
18dB
28V
32.5A
-
1.08A
45W
65V
SOT-1121A
LDMOST
MRFG35003NT1
NXP

FET RF 15V 3.55GHZ 1.5-PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11.5dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 3W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
pacchetto: PLD-1.5
Azione4.592
3.55GHz
11.5dB
12V
-
-
55mA
3W
15V
PLD-1.5
PLD-1.5
J300_D26Z
Fairchild/ON Semiconductor

JFET N-CH 25V TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.392
-
-
-
-
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
J309_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.864
450MHz
12dB
10V
30mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF6G10LS-135RN:11
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 32A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 26.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione2.640
871.5MHz ~ 891.5MHz
21dB
28V
32A
-
950mA
26.5W
65V
SOT-502B
SOT502B
BLF6G10LS-135RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 32A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 26.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione4.672
871.5MHz ~ 891.5MHz
21dB
28V
32A
-
950mA
26.5W
65V
SOT-502B
SOT502B
BF1202R,215
NXP

MOSFET 2N-CH 10V 30MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30.5dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: 200mW
  • Voltage - Rated: 10V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143R
pacchetto: TO-253-4, TO-253AA
Azione5.104
400MHz
30.5dB
5V
30mA
0.9dB
12mA
200mW
10V
TO-253-4, TO-253AA
SOT-143R
AFT23S160W02SR3
NXP

FET RF 65V 2.4GHZ NI780S-2

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione7.792
2.4GHz
17.9dB
28V
-
-
1.1A
45W
65V
NI-780S
NI-780S
BLF25M612,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT975B

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975B
  • Supplier Device Package: CDFM2
pacchetto: SOT-975B
Azione2.912
2.45GHz
19dB
28V
-
-
10mA
12W
65V
SOT-975B
CDFM2
LET9070FB
STMicroelectronics

RF MOSFET LDMOS 28V M250

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 70W
  • Voltage - Rated: 80V
  • Package / Case: M250
  • Supplier Device Package: M250
pacchetto: M250
Azione4.640
945MHz
16dB
28V
1µA
-
400mA
70W
80V
M250
M250
BLF8G27LS-140,118
Ampleon USA Inc.

RF FET LDMOS 65V 17.4DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 17.4dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione5.568
2.62GHz ~ 2.69GHz
17.4dB
32V
-
-
1.3A
45W
65V
SOT-502B
SOT502B
BLP35M805Z
Ampleon USA Inc.

RF FET LDMOS 65V 18DB 16VDFN

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 750mW
  • Voltage - Rated: 65V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-HVSON (4x6)
pacchetto: 16-VDFN Exposed Pad
Azione6.832
2.14GHz
18dB
28V
-
-
55mA
750mW
65V
16-VDFN Exposed Pad
16-HVSON (4x6)
BLF183XRU
Ampleon USA Inc.

RF FET LDMOS 135V 28DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 350W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
pacchetto: SOT-1121A
Azione6.516
108MHz
28dB
50V
-
-
100mA
350W
135V
SOT-1121A
CDFM4
MRF1518NT1
NXP

FET RF 40V 520MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 13dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
pacchetto: PLD-1.5
Azione13.452
520MHz
13dB
12.5V
4A
-
150mA
8W
40V
PLD-1.5
PLD-1.5
NE5510279A-T1-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz
  • Gain: 16dB
  • Voltage - Test: 4.8 V
  • Current Rating: 100nA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 2W
  • Voltage - Rated: 20 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
pacchetto: -
Request a Quote
1.8GHz
16dB
4.8 V
100nA
-
300 mA
2W
20 V
4-SMD, Flat Leads
79A
C4H27W400AVY
Ampleon USA Inc.

RF MOSFET 50V DFM6

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 400W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
pacchetto: -
Azione84
2.3GHz ~ 2.7GHz
15dB
50 V
-
-
200 mA
400W
150 V
SOT-1275-1
DFM6
A5G23H110NT4
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 13.8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
pacchetto: -
Request a Quote
2.3GHz ~ 2.4GHz
17.9dB
48 V
-
-
60 mA
13.8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
A5G26H110NT4
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 17.7dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 15W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
pacchetto: -
Request a Quote
2.496GHz ~ 2.69GHz
17.7dB
48 V
-
-
50 mA
15W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
B10G2327N55DZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V 20QFN

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 30dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 49 mA
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 20-QFN Exposed Pad
  • Supplier Device Package: 20-PQFN (8x8)
pacchetto: -
Azione1.419
2.3GHz ~ 2.7GHz
30dB
32 V
1.4µA
-
49 mA
-
65 V
20-QFN Exposed Pad
20-PQFN (8x8)
PXAD184218FV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 14dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 720 mA
  • Power - Output: 130W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
pacchetto: -
Request a Quote
1.805GHz ~ 1.88GHz
14dB
28 V
10µA
-
720 mA
130W
65 V
H-37275G-6/2
H-37275G-6/2
VMMK-1225-BLKG
Broadcom Limited

RF MOSFET E-PHEMT 2V 0402

  • Transistor Type: E-pHEMT
  • Frequency: 12GHz
  • Gain: 11dB
  • Voltage - Test: 2 V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 20 mA
  • Power - Output: 8dBm
  • Voltage - Rated: 5 V
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402
pacchetto: -
Request a Quote
12GHz
11dB
2 V
50mA
1dB
20 mA
8dBm
5 V
0402 (1005 Metric)
0402