Pagina 60 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
BG5120KH6327XTSA1	Infineon Technologies	MOSFET N-CH DUAL 8V 20MA SOT363 Transistor Type: 2 N-Channel (Dual) Frequency: 800MHz Gain: 23dB Voltage - Test: 5V Current Rating: 20mA Noise Figure: 1.1dB Current - Test: 10mA Power - Output: - Voltage - Rated: 8V Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	pacchetto: 6-VSSOP, SC-88, SOT-363	Azione5.024	800MHz	23dB	5V	20mA	1.1dB	10mA	-	8V	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
BF999E6433HTMA1	Infineon Technologies	MOSFET N-CH 20V 30MA SOT-23 Transistor Type: N-Channel Frequency: 45MHz Gain: 27dB Voltage - Test: 10V Current Rating: 30mA Noise Figure: 2.1dB Current - Test: 10mA Power - Output: - Voltage - Rated: 20V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.560	45MHz	27dB	10V	30mA	2.1dB	10mA	-	20V	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
NE3210S01-T1B	CEL	FET RF 4V 12GHZ S01 Transistor Type: HFET Frequency: 12GHz Gain: 13.5dB Voltage - Test: 2V Current Rating: 15mA Noise Figure: 0.35dB Current - Test: 10mA Power - Output: - Voltage - Rated: 4V Package / Case: 4-SMD Supplier Device Package: SMD	pacchetto: 4-SMD	Azione734.892	12GHz	13.5dB	2V	15mA	0.35dB	10mA	-	4V	4-SMD	SMD
NE5550779A-A	CEL	FET RF 30V 900MHZ 79A Transistor Type: LDMOS Frequency: 900MHz Gain: 22dB Voltage - Test: 7.5V Current Rating: 2.1A Noise Figure: - Current - Test: 140mA Power - Output: 38.5dBm Voltage - Rated: 30V Package / Case: 4-SMD, Flat Leads Supplier Device Package: 79A	pacchetto: 4-SMD, Flat Leads	Azione3.968	900MHz	22dB	7.5V	2.1A	-	140mA	38.5dBm	30V	4-SMD, Flat Leads	79A
2N5950_J35Z	Fairchild/ON Semiconductor	JFET N-CH 30V 15MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 15mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione4.160	-	-	-	15mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MRF5S21100HSR3	NXP	FET RF 65V 2.17GHZ NI-780S Transistor Type: LDMOS Frequency: 2.16GHz ~ 2.17GHz Gain: 13.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.05A Power - Output: 23W Voltage - Rated: 65V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione5.408	2.16GHz ~ 2.17GHz	13.5dB	28V	-	-	1.05A	23W	65V	NI-780S	NI-780S
BF245C_D26Z	Fairchild/ON Semiconductor	JFET N-CH 30V 25MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 25mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione5.872	-	-	-	25mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PTVA104501EHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.808	-	-	-	-	-	-	-	-	-	-
PXFC192207SHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.600	-	-	-	-	-	-	-	-	-	-
PXFC191507FCV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione4.432	-	-	-	-	-	-	-	-	-	-
A2T07H310-24SR6	NXP	FET RF 2CH 70V 880MHZ Transistor Type: LDMOS (Dual) Frequency: 880MHz Gain: 18.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 700mA Power - Output: 47W Voltage - Rated: 70V Package / Case: NI-1230-4LS2L Supplier Device Package: NI-1230-4LS2L	pacchetto: NI-1230-4LS2L	Azione7.536	880MHz	18.6dB	28V	-	-	700mA	47W	70V	NI-1230-4LS2L	NI-1230-4LS2L
BLC9G20LS-160PVY	Ampleon USA Inc.	BLC9G20LS-160PV/SOT1275/REELDP Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione2.176	-	-	-	-	-	-	-	-	-	-
BLF8G24LS-100VJ	Ampleon USA Inc.	RF FET LDMOS 65V 18DB SOT1244B Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.4GHz Gain: 18dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 900mA Power - Output: 25W Voltage - Rated: 65V Package / Case: SOT-1244B Supplier Device Package: CDFM6	pacchetto: SOT-1244B	Azione2.512	2.3GHz ~ 2.4GHz	18dB	28V	-	-	900mA	25W	65V	SOT-1244B	CDFM6
PD57045S-E	STMicroelectronics	FET RF 65V 945MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 945MHz Gain: 14.5dB Voltage - Test: 28V Current Rating: 5A Noise Figure: - Current - Test: 250mA Power - Output: 45W Voltage - Rated: 65V Package / Case: PowerSO-10 Exposed Bottom Pad Supplier Device Package: PowerSO-10RF (Straight Lead)	pacchetto: PowerSO-10 Exposed Bottom Pad	Azione6.384	945MHz	14.5dB	28V	5A	-	250mA	45W	65V	PowerSO-10 Exposed Bottom Pad	PowerSO-10RF (Straight Lead)
MMRF1314HSR5	NXP	TRANS RF FET 1.4GHZ 1000W 52V Transistor Type: LDMOS (Dual) Frequency: 1.4GHz Gain: 17.7dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 500mA Power - Output: 1000W Voltage - Rated: 105V Package / Case: NI-1230-4S Supplier Device Package: NI-1230-4S	pacchetto: NI-1230-4S	Azione2.544	1.4GHz	17.7dB	50V	-	-	500mA	1000W	105V	NI-1230-4S	NI-1230-4S
BLP8G10S-45PY	Ampleon USA Inc.	RF FET LDMOS 65V 20.8DB SOT12231 Transistor Type: LDMOS (Dual), Common Source Frequency: 952.5MHz ~ 957.5MHz Gain: 20.8dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 224mA Power - Output: 2.5W Voltage - Rated: 65V Package / Case: SOT-1223-1 Supplier Device Package: 4-HSOPF	pacchetto: SOT-1223-1	Azione3.264	952.5MHz ~ 957.5MHz	20.8dB	28V	-	-	224mA	2.5W	65V	SOT-1223-1	4-HSOPF
MMRF1009HR5	NXP	FET RF 110V 1.03GHZ NI-780S Transistor Type: LDMOS Frequency: 1.03GHz Gain: 19.7dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 500W Voltage - Rated: 110V Package / Case: SOT-957A Supplier Device Package: NI-780H-2L	pacchetto: SOT-957A	Azione7.296	1.03GHz	19.7dB	50V	-	-	200mA	500W	110V	SOT-957A	NI-780H-2L
A2T23H300-24SR6	NXP	IC TRANS RF LDMOS Transistor Type: LDMOS (Dual) Frequency: 2.3GHz Gain: 14.9dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 750mA Power - Output: 66W Voltage - Rated: 65V Package / Case: NI-1230-4LS2L Supplier Device Package: NI-1230-4LS2L	pacchetto: NI-1230-4LS2L	Azione7.764	2.3GHz	14.9dB	28V	-	-	750mA	66W	65V	NI-1230-4LS2L	NI-1230-4LS2L
MRFE6VP5300GNR1	NXP	FET RF 2CH 133V 230MHZ TO-270 GW Transistor Type: LDMOS (Dual) Frequency: 230MHz Gain: 27dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 300W Voltage - Rated: 133V Package / Case: TO-270BB Supplier Device Package: TO-270 WB-4 Gull	pacchetto: TO-270BB	Azione3.632	230MHz	27dB	50V	-	-	100mA	300W	133V	TO-270BB	TO-270 WB-4 Gull
CGH40035F	Cree/Wolfspeed	FET RF 84V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10.5A Noise Figure: - Current - Test: 500mA Power - Output: 45W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	pacchetto: 440193	Azione14.352	0Hz ~ 4GHz	14dB	28V	10.5A	-	500mA	45W	84V	440193	440193
BLC10G18XS-602AVTZ	Ampleon USA Inc.	RF MOSFET LDMOS 30V SOT1258-4 Transistor Type: LDMOS Frequency: 1.805GHz ~ 1.88GHz Gain: 16dB Voltage - Test: 30 V Current Rating: 2.8µA Noise Figure: - Current - Test: 800 mA Power - Output: 600W Voltage - Rated: 65 V Package / Case: SOT-1258-4 Supplier Device Package: SOT1258-4	pacchetto: -	Request a Quote	1.805GHz ~ 1.88GHz	16dB	30 V	2.8µA	-	800 mA	600W	65 V	SOT-1258-4	SOT1258-4
TBB1005EMTL-E	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
C4H27W400AVZ	Ampleon USA Inc.	RF MOSFET 50V DFM6 Transistor Type: MOSFET (Metal Oxide) Frequency: 2.3GHz ~ 2.7GHz Gain: 15dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 200 mA Power - Output: 400W Voltage - Rated: 150 V Package / Case: SOT-1275-1 Supplier Device Package: DFM6	pacchetto: -	Azione162	2.3GHz ~ 2.7GHz	15dB	50 V	-	-	200 mA	400W	150 V	SOT-1275-1	DFM6
BLC2425M9XS250Z	Ampleon USA Inc.	RF MOSFET SOT1270-1 Transistor Type: - Frequency: 2.4GHz ~ 2.5GHz Gain: 18dB Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 32 V Package / Case: SOT-1270-1 Supplier Device Package: SOT-1270-1	pacchetto: -	Request a Quote	2.4GHz ~ 2.5GHz	18dB	-	-	-	-	-	32 V	SOT-1270-1	SOT-1270-1
CGH35060P2	MACOM Technology Solutions	RF MOSFET GAN HEMT 28V 440206 Transistor Type: GaN HEMT Frequency: 3.1GHz ~ 3.5GHz Gain: 11.5dB Voltage - Test: 28 V Current Rating: - Noise Figure: - Current - Test: 200 mA Power - Output: 60W Voltage - Rated: 120 V Package / Case: 440206 Supplier Device Package: 440206	pacchetto: -	Request a Quote	3.1GHz ~ 3.5GHz	11.5dB	28 V	-	-	200 mA	60W	120 V	440206	440206
IGT8292M50	Integra Technologies Inc.	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione30	-	-	-	-	-	-	-	-	-	-
MWT-PH33F	CML Microcircuits	RF MOSFET PHEMT FET 3V CHIP Transistor Type: pHEMT FET Frequency: 26GHz Gain: 14dB Voltage - Test: 3 V Current Rating: 90mA Noise Figure: - Current - Test: 1 mA Power - Output: 24dBm Voltage - Rated: - Package / Case: Die Supplier Device Package: Chip	pacchetto: -	Azione750	26GHz	14dB	3 V	90mA	-	1 mA	24dBm	-	Die	Chip
PXAC182908FV-V1-R250	MACOM Technology Solutions	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-