Pagina 35 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  35/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BLF6G05LS-200RN:11
Ampleon USA Inc.

RF FET LDMOS 65V 24DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 460MHz ~ 470MHz
  • Gain: 24dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: LDMOST
pacchetto: SOT-502B
Azione2.512
460MHz ~ 470MHz
24dB
28V
49A
-
1.4A
40W
65V
SOT-502B
LDMOST
BF908R,235
NXP

MOSFET DUAL GATE 12V 40MA SOT143

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione2.528
200MHz
-
8V
40mA
0.6dB
15mA
-
12V
SOT-143R
SOT-143R
MRF8S9100HSR5
NXP

FET RF 70V 920MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 72W
  • Voltage - Rated: 70V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione2.208
920MHz
19.3dB
28V
-
-
500mA
72W
70V
NI-780S
NI-780S
MRF7S18125BHSR5
NXP

FET RF 65V 1.93GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione4.320
1.93GHz
16.5dB
28V
-
-
1.1A
125W
65V
NI-780S
NI-780S
MRFE6S9201HR5
NXP

FET RF 66V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 66V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione7.296
880MHz
20.8dB
28V
-
-
1.4A
40W
66V
NI-780
NI-780
BF245B,126
NXP

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 15mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione2.400
100MHz
-
15V
15mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot SPF-2086TK
RFMD

IC TRANS PHEMT 6GHZ SOT-86

  • Transistor Type: pHEMT FET
  • Frequency: 4GHz
  • Gain: 18.7dB
  • Voltage - Test: 5V
  • Current Rating: 140mA
  • Noise Figure: 0.5dB
  • Current - Test: 40mA
  • Power - Output: 20dBm
  • Voltage - Rated: 7V
  • Package / Case: SOT-86
  • Supplier Device Package: -
pacchetto: SOT-86
Azione23.244
4GHz
18.7dB
5V
140mA
0.5dB
40mA
20dBm
7V
SOT-86
-
NE25139-T1
CEL

FET RF 13V 900MHZ SOT-143

  • Transistor Type: MESFET Dual Gate
  • Frequency: 900MHz
  • Gain: 20dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 13V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione6.368
900MHz
20dB
5V
40mA
1.1dB
10mA
-
13V
TO-253-4, TO-253AA
SOT-143
BF1100R,235
NXP

MOSFET N-CH 14V 30MA SOT143

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 9V
  • Current Rating: 30mA
  • Noise Figure: 2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 14V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione2.016
800MHz
-
9V
30mA
2dB
10mA
-
14V
SOT-143R
SOT-143R
BLF2045,112
Ampleon USA Inc.

RF FET LDMOS 65V 10DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 10dB
  • Voltage - Test: 26V
  • Current Rating: 4.5A
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
pacchetto: SOT467C
Azione3.328
2GHz
10dB
26V
4.5A
-
180mA
30W
65V
SOT467C
SOT467C
BLF6G10LS-260PRN,1
Ampleon USA Inc.

RF FET LDMOS 65V 22DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 917.5MHz ~ 962.5MHz
  • Gain: 22dB
  • Voltage - Test: 28V
  • Current Rating: 64A
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
pacchetto: SOT539B
Azione2.304
917.5MHz ~ 962.5MHz
22dB
28V
64A
-
1.8A
40W
65V
SOT539B
CDFM4
PTFC262808FVV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.408
-
-
-
-
-
-
-
-
-
-
PTFC262157FHV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.704
-
-
-
-
-
-
-
-
-
-
MRF6V12250HSR5
NXP

FET RF 100V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione3.360
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780S
NI-780S
BLF7G24LS-160P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione7.632
2.3GHz ~ 2.4GHz
18.5dB
28V
-
-
1.2A
30W
65V
SOT539B
SOT539B
MRF6V4300NR5
NXP

FET RF 110V 450MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
pacchetto: TO-270AB
Azione3.984
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-270AB
TO-270 WB-4
BLF6G27L-50BN,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 430mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
pacchetto: SOT-1112A
Azione2.512
2.5GHz ~ 2.7GHz
16.5dB
28V
-
-
430mA
3W
65V
SOT-1112A
CDFM6
IXZR08N120B-00
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 250W
  • Voltage - Rated: 1200V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
pacchetto: TO-247-3
Azione7.984
100MHz
-
-
1mA
-
-
250W
1200V
TO-247-3
PLUS247?-3
VRF151
Microsemi Corporation

MOSFET RF PWR N-CH 50V 150W M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 170V
  • Package / Case: M174
  • Supplier Device Package: M174
pacchetto: M174
Azione5.232
175MHz
14dB
50V
1mA
-
250mA
150W
170V
M174
M174
BLP10H605AZ
Ampleon USA Inc.

RF FET LDMOS 104V 22DB 12VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 22.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 5W
  • Voltage - Rated: 104V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
pacchetto: 12-VDFN Exposed Pad
Azione5.248
860MHz
22.4dB
50V
-
-
30mA
5W
104V
12-VDFN Exposed Pad
12-HVSON (5x6)
PD57030S-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
pacchetto: PowerSO-10 Exposed Bottom Pad
Azione9.480
945MHz
14dB
28V
4A
-
50mA
30W
65V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
CGH60030D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione7.088
6GHz
15dB
28V
-
-
250mA
30W
84V
Die
Die
CLF3H0035S-100U
Ampleon USA Inc.

RF MOSFET HEMT 50V SOT467B

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3.5GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 100W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-467B
  • Supplier Device Package: SOT-467B
pacchetto: -
Azione18
0Hz ~ 3.5GHz
15dB
50 V
-
-
300 mA
100W
150 V
SOT-467B
SOT-467B
PXAC261002FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 26V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15.1dB
  • Voltage - Test: 26 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 210 mA
  • Power - Output: 18W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacchetto: -
Request a Quote
2.69GHz
15.1dB
26 V
-
-
210 mA
18W
65 V
H-37248-4
H-37248-4
WP2806008UH
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V 360BH

  • Transistor Type: GaN HEMT
  • Frequency: 6GHz
  • Gain: 11dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 6W
  • Voltage - Rated: 160 V
  • Package / Case: 360BH
  • Supplier Device Package: 360BH
pacchetto: -
Azione36
6GHz
11dB
28 V
-
-
70 mA
6W
160 V
360BH
360BH
MMRF1008GHR5
NXP

RF MOSFET LDMOS 50V NI780

  • Transistor Type: LDMOS
  • Frequency: 900MHz ~ 1.215GHz
  • Gain: 20.3dB
  • Voltage - Test: 50 V
  • Current Rating: 100µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 275W
  • Voltage - Rated: 100 V
  • Package / Case: NI-780GH-2L
  • Supplier Device Package: NI-780GH-2L
pacchetto: -
Request a Quote
900MHz ~ 1.215GHz
20.3dB
50 V
100µA
-
100 mA
275W
100 V
NI-780GH-2L
NI-780GH-2L
PTVA092407NF-V2-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 4HBSOF

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 22.5dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 240W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-4-2
  • Supplier Device Package: PG-HBSOF-4-2
pacchetto: -
Request a Quote
869MHz ~ 960MHz
22.5dB
48 V
10µA
-
900 mA
240W
105 V
HBSOF-4-2
PG-HBSOF-4-2
A2T21H141W24SR3
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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