Pagina 21 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
BF 5030R E6327	Infineon Technologies	MOSFET N-CH 8V 25MA SOT143R Transistor Type: N-Channel Frequency: 800MHz Gain: 24dB Voltage - Test: 3V Current Rating: 25mA Noise Figure: 1.3dB Current - Test: 10mA Power - Output: - Voltage - Rated: 8V Package / Case: SOT-143R Supplier Device Package: PG-SOT143R-4	pacchetto: SOT-143R	Azione7.712	800MHz	24dB	3V	25mA	1.3dB	10mA	-	8V	SOT-143R	PG-SOT143R-4
PTFA191001F V4 R250	Infineon Technologies	IC FET RF LDMOS 100W H-37248-2 Transistor Type: LDMOS Frequency: 1.96GHz Gain: 17dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 900mA Power - Output: 44dBm Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37248-2	pacchetto: 2-Flatpack, Fin Leads, Flanged	Azione4.064	1.96GHz	17dB	30V	10µA	-	900mA	44dBm	65V	2-Flatpack, Fin Leads, Flanged	H-37248-2
BLF8G27LS-100PU	Ampleon USA Inc.	RF FET LDMOS 65V 18DB SOT1121B Transistor Type: LDMOS (Dual), Common Source Frequency: 2.5GHz ~ 2.7GHz Gain: 18dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 860mA Power - Output: 25W Voltage - Rated: 65V Package / Case: SOT-1121B Supplier Device Package: CDFM4	pacchetto: SOT-1121B	Azione7.776	2.5GHz ~ 2.7GHz	18dB	28V	-	-	860mA	25W	65V	SOT-1121B	CDFM4
MRF7S18125BHR5	NXP	FET RF 65V 1.93GHZ NI780 Transistor Type: LDMOS Frequency: 1.93GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 125W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione5.168	1.93GHz	16.5dB	28V	-	-	1.1A	125W	65V	NI-780	NI-780
MD7P19130HSR3	NXP	FET RF 2CH 65V 1.99GHZ NI780HS-4 Transistor Type: LDMOS (Dual) Frequency: 1.99GHz Gain: 20dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.25A Power - Output: 40W Voltage - Rated: 65V Package / Case: NI-780S-4 Supplier Device Package: NI-780S-4	pacchetto: NI-780S-4	Azione10.464	1.99GHz	20dB	28V	-	-	1.25A	40W	65V	NI-780S-4	NI-780S-4
MRF7S38040HR5	NXP	FET RF 65V 3.6GHZ NI-400 Transistor Type: LDMOS Frequency: 3.4GHz ~ 3.6GHz Gain: 14dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 450mA Power - Output: 8W Voltage - Rated: 65V Package / Case: NI-400-240 Supplier Device Package: NI-400-240	pacchetto: NI-400-240	Azione7.648	3.4GHz ~ 3.6GHz	14dB	30V	-	-	450mA	8W	65V	NI-400-240	NI-400-240
MRF6S9060NBR1	NXP	FET RF 68V 880MHZ TO-272-2 Transistor Type: LDMOS Frequency: 880MHz Gain: 21.4dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 450mA Power - Output: 14W Voltage - Rated: 68V Package / Case: TO-272BC Supplier Device Package: TO-272-2	pacchetto: TO-272BC	Azione6.176	880MHz	21.4dB	28V	-	-	450mA	14W	68V	TO-272BC	TO-272-2
BLF521,112	Ampleon USA Inc.	RF FET NCHA 40V 13DB SOT172D Transistor Type: N-Channel Frequency: 500MHz Gain: 13dB Voltage - Test: 12.5V Current Rating: 1A Noise Figure: - Current - Test: 10mA Power - Output: 2W Voltage - Rated: 40V Package / Case: SOT-172D Supplier Device Package: CRDB4	pacchetto: SOT-172D	Azione7.632	500MHz	13dB	12.5V	1A	-	10mA	2W	40V	SOT-172D	CRDB4
PTFA041501EV4R0XTMA1	Infineon Technologies	RF MOSFET LDMOS 28V H-36248-2 Transistor Type: LDMOS Frequency: 420MHz ~ 500MHz Gain: 21dB Voltage - Test: 28V Current Rating: 1µA Noise Figure: - Current - Test: 900mA Power - Output: 150W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36248-2	pacchetto: 2-Flatpack, Fin Leads	Azione6.256	420MHz ~ 500MHz	21dB	28V	1µA	-	900mA	150W	65V	2-Flatpack, Fin Leads	H-36248-2
PXFC192207NFV1R500XUMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.936	-	-	-	-	-	-	-	-	-	-
PTFB091507FHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.968	-	-	-	-	-	-	-	-	-	-
BF888H6327XTSA1	Infineon Technologies	MOSFET N-CH RF 12V 30MA SOT-343 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.296	-	-	-	-	-	-	-	-	-	-
MMRF1009HSR5	NXP	FET RF 110V 1.03GHZ NI-780S Transistor Type: LDMOS Frequency: 1.03GHz Gain: 19.7dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 500W Voltage - Rated: 110V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione3.840	1.03GHz	19.7dB	50V	-	-	200mA	500W	110V	NI-780S	NI-780S
BLC8G09XS-400AVTY	Ampleon USA Inc.	BLC8G09XS-400AVT/SOT1258/REELD Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione5.760	-	-	-	-	-	-	-	-	-	-
MRF6V2150NBR5	NXP	FET RF 110V 220MHZ TO272-4 Transistor Type: LDMOS Frequency: 220MHz Gain: 25dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 450mA Power - Output: 150W Voltage - Rated: 110V Package / Case: TO-272BB Supplier Device Package: TO-272 WB-4	pacchetto: TO-272BB	Azione5.040	220MHz	25dB	50V	-	-	450mA	150W	110V	TO-272BB	TO-272 WB-4
MRF7S19120NR1	NXP	FET RF 65V 1.99GHZ TO-270-4 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 18dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.2A Power - Output: 36W Voltage - Rated: 65V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	pacchetto: TO-270AB	Azione35.592	1.99GHz	18dB	28V	-	-	1.2A	36W	65V	TO-270AB	TO-270 WB-4
MRF6S18060NR1	NXP	FET RF 68V 1.99GHZ TO270-4 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 15dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 600mA Power - Output: 60W Voltage - Rated: 68V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	pacchetto: TO-270AB	Azione7.984	1.99GHz	15dB	26V	-	-	600mA	60W	68V	TO-270AB	TO-270 WB-4
CLF1G0060S-30U	Ampleon USA Inc.	RF FET HEMT 150V 13DB SOT1227B Transistor Type: HEMT Frequency: 3GHz ~ 3.5GHz Gain: 13dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 70mA Power - Output: 30W Voltage - Rated: 150V Package / Case: SOT-1227B Supplier Device Package: SOT-1227B	pacchetto: SOT-1227B	Azione5.328	3GHz ~ 3.5GHz	13dB	50V	-	-	70mA	30W	150V	SOT-1227B	SOT-1227B
UF28150J	M/A-Com Technology Solutions	MOSFET 150W 28V 100-500MHZ Transistor Type: 2 N-Channel (Dual) Frequency: 100MHz ~ 500MHz Gain: 8dB Voltage - Test: 28V Current Rating: 16A Noise Figure: - Current - Test: 400mA Power - Output: 150W Voltage - Rated: 65V Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.712	100MHz ~ 500MHz	8dB	28V	16A	-	400mA	150W	65V	-	-
MRF1511NT1	NXP	FET RF 40V 175MHZ PLD-1.5 Transistor Type: LDMOS Frequency: 175MHz Gain: 13dB Voltage - Test: 7.5V Current Rating: 4A Noise Figure: - Current - Test: 150mA Power - Output: 8W Voltage - Rated: 40V Package / Case: PLD-1.5 Supplier Device Package: PLD-1.5	pacchetto: PLD-1.5	Azione3.392	175MHz	13dB	7.5V	4A	-	150mA	8W	40V	PLD-1.5	PLD-1.5
BLP8G10S-270PWY	Ampleon USA Inc.	RF FET LDMOS 65V 20DB SOT12212 Transistor Type: LDMOS (Dual), Common Source Frequency: 718.5MHz ~ 765.5MHz Gain: 20dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 2A Power - Output: 56W Voltage - Rated: 65V Package / Case: SOT-1221-2 Supplier Device Package: 6-HSOPF	pacchetto: SOT-1221-2	Azione6.864	718.5MHz ~ 765.5MHz	20dB	28V	-	-	2A	56W	65V	SOT-1221-2	6-HSOPF
CGHV1J006D-GP4	MACOM Technology Solutions	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40 V Current Rating: - Noise Figure: - Current - Test: 30 mA Power - Output: 6W Voltage - Rated: 100 V Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	18GHz	17dB	40 V	-	-	30 mA	6W	100 V	Die	Die
PTFC270101M-V1-R1K	MACOM Technology Solutions	RF MOSFET LDMOS 28V 10SON Transistor Type: LDMOS Frequency: 2.17GHz Gain: 20.5dB Voltage - Test: 28 V Current Rating: - Noise Figure: - Current - Test: 120 mA Power - Output: 2.4W Voltage - Rated: 65 V Package / Case: 10-LDFN Exposed Pad Supplier Device Package: PG-SON-10	pacchetto: -	Azione48	2.17GHz	20.5dB	28 V	-	-	120 mA	2.4W	65 V	10-LDFN Exposed Pad	PG-SON-10
TAV2-14LN	Mini-Circuits	RF MOSFET E-PHEMT 4V Transistor Type: E-pHEMT Frequency: 50MHz ~ 10GHz Gain: 23.4dB Voltage - Test: 4 V Current Rating: 2µA Noise Figure: 2.5dB Current - Test: 4 mA Power - Output: 19.4dBm Voltage - Rated: 5 V Package / Case: 6-TDFN Exposed Pad Supplier Device Package: -	pacchetto: -	Azione5.601	50MHz ~ 10GHz	23.4dB	4 V	2µA	2.5dB	4 mA	19.4dBm	5 V	6-TDFN Exposed Pad	-
PXAE261908NF-V1-R5	MACOM Technology Solutions	RF MOSFET LDMOS 28V 6HBSOF Transistor Type: LDMOS (Dual) Frequency: 2.515GHz ~ 2.675GHz Gain: 13.5dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 450 mA Power - Output: 240W Voltage - Rated: 65 V Package / Case: PG-HBSOF-6-3 Supplier Device Package: PG-HBSOF-6-3	pacchetto: -	Request a Quote	2.515GHz ~ 2.675GHz	13.5dB	28 V	10µA	-	450 mA	240W	65 V	PG-HBSOF-6-3	PG-HBSOF-6-3
2SK238-T1B-A	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
A5G26H110N-2496	NXP	RF MOSFET 48V 6DFN Transistor Type: - Frequency: 2.496GHz ~ 2.69GHz Gain: 17.7dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 50 mA Power - Output: 15W Voltage - Rated: 125 V Package / Case: 6-LDFN Exposed Pad Supplier Device Package: 6-PDFN (7x6.5)	pacchetto: -	Request a Quote	2.496GHz ~ 2.69GHz	17.7dB	48 V	-	-	50 mA	15W	125 V	6-LDFN Exposed Pad	6-PDFN (7x6.5)
BB504MDS-TL-E	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-