Pagina 17 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 706
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - FET, MOSFET - RF

Record 3.855
Pagina  17/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BG5120KE6327HTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 20MA SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 20mA
  • Noise Figure: 1.1dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione6.384
800MHz
23dB
5V
20mA
1.1dB
10mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BLF6G10LS-135R,112
Ampleon USA Inc.

RF FET LDMOS 65V 21DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 32A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 26.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione2.336
871.5MHz ~ 891.5MHz
21dB
28V
32A
-
950mA
26.5W
65V
SOT-502B
SOT502B
MRF6S27050HSR5
NXP

FET RF 68V 2.62GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 7W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione6.272
2.62GHz
16dB
28V
-
-
500mA
7W
68V
NI-780S
NI-780S
MRF9045LSR5
NXP

FET RF 65V 945MHZ NI-360S

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 18.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-360S
  • Supplier Device Package: NI-360 Short Lead
pacchetto: NI-360S
Azione7.840
945MHz
18.8dB
28V
-
-
350mA
45W
65V
NI-360S
NI-360 Short Lead
MRF9060LR5
NXP

FET RF 65V 945MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 17dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360 Short Lead
pacchetto: NI-360
Azione4.256
945MHz
17dB
26V
-
-
450mA
60W
65V
NI-360
NI-360 Short Lead
PTFB212503ELV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.1dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
pacchetto: H-33288-6
Azione5.488
2.17GHz
18.1dB
30V
-
-
1.85A
55W
65V
H-33288-6
H-33288-6
BLS9G2729LS-350U
Ampleon USA Inc.

BLS9G2729LS-350/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.192
-
-
-
-
-
-
-
-
-
-
MRFE6VP6600GNR3
NXP

TRANS RF LDMOS 600W 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
pacchetto: OM-780G-4L
Azione5.680
230MHz
24.7dB
50V
-
-
100mA
600W
133V
OM-780G-4L
OM-780G-4L
MRF8P20140WGHSR3
NXP

FET RF 2CH 65V 1.91GHZ NI780S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.88GHz ~ 1.91GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
pacchetto: NI-780S-4
Azione3.856
1.88GHz ~ 1.91GHz
16dB
28V
-
-
500mA
24W
65V
NI-780S-4
NI-780S-4
BLF8G27LS-100V,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
pacchetto: SOT-1244B
Azione4.864
2.5GHz ~ 2.7GHz
17dB
28V
-
-
900mA
25W
65V
SOT-1244B
CDFM6
BLF7G24LS-140,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione4.992
2.3GHz ~ 2.4GHz
18.5dB
28V
28A
-
1.3A
30W
65V
SOT-502B
SOT502B
BF512,235
NXP

JFET N-CH 20V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: 5mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.520
100MHz
-
10V
30mA
1.5dB
5mA
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
J211_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 20mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.472
-
-
-
20mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLL6H1214LS-250,11
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 42A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione4.720
1.2GHz ~ 1.4GHz
17dB
50V
42A
-
100mA
250W
100V
SOT-502B
SOT502B
BLL8H1214L-500U
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 500W
  • Voltage - Rated: 100V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione5.840
1.2GHz ~ 1.4GHz
17dB
50V
-
-
150mA
500W
100V
SOT539A
SOT539A
MRF1K50NR5
NXP

WIDEBAND RF POWER LDMOS TRANSIST

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 500MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1500W
  • Voltage - Rated: 50V
  • Package / Case: OM-1230-4L
  • Supplier Device Package: OM-1230-4L
pacchetto: OM-1230-4L
Azione5.104
1.8MHz ~ 500MHz
23dB
50V
-
-
-
1500W
50V
OM-1230-4L
OM-1230-4L
MMBFJ310LT3G
ON Semiconductor

JFET N-CH 25V 60MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.632
-
-
-
60mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BLP7G07S-140PY
Ampleon USA Inc.

RF FET LDMOS 65V 20.9DB SOT12231

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 724MHz ~ 769MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
pacchetto: SOT-1223-1
Azione7.936
724MHz ~ 769MHz
20.9dB
28V
-
-
1.2A
35W
65V
SOT-1223-1
4-HSOPF
hot MMBFJ309LT1G
ON Semiconductor

JFET N-CH 25V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione181.200
-
-
-
30mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot MRFE6VP61K25HR5
NXP

FET RF 2CH 133V 230MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
pacchetto: NI-1230
Azione4.208
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230
NI-1230
hot MW6S004NT1
NXP

FET RF 68V 1.96GHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 4W
  • Voltage - Rated: 68V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
pacchetto: PLD-1.5
Azione146.532
1.96GHz
18dB
28V
-
-
50mA
4W
68V
PLD-1.5
PLD-1.5
PTFC210202FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacchetto: -
Request a Quote
2.2GHz
21dB
28 V
-
-
170 mA
5W
65 V
H-37248-4
H-37248-4
PTFB192503EL-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-33288-6

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 50W
  • Voltage - Rated: 65 V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
pacchetto: -
Request a Quote
1.99GHz
19dB
30 V
-
-
1.9 A
50W
65 V
H-33288-6
H-33288-6
CG2H40010P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440196

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 16.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 10W
  • Voltage - Rated: 120 V
  • Package / Case: 440196
  • Supplier Device Package: 440196
pacchetto: -
Request a Quote
8GHz
16.7dB
28 V
-
-
200 mA
10W
120 V
440196
440196
BLA9H0912LS-1200PU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539A

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 75 mA
  • Power - Output: 1200W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-539A
  • Supplier Device Package: SOT539A
pacchetto: -
Azione30
960MHz ~ 1.215GHz
19dB
50 V
2.8µA
-
75 mA
1200W
106 V
SOT-539A
SOT539A
2731GN-120V
Microchip Technology

RF MOSFET HEMT 50V 55-QP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 16.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 145W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QP
  • Supplier Device Package: 55-QP
pacchetto: -
Request a Quote
2.7GHz ~ 3.1GHz
16.5dB
50 V
-
-
30 mA
145W
125 V
55-QP
55-QP
PXAE1837078NB-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC9H10XS-600AZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1250-1

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 960MHz
  • Gain: 17.7dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 600W
  • Voltage - Rated: 105 V
  • Package / Case: SOT1250-1
  • Supplier Device Package: SOT1250-1
pacchetto: -
Azione303
616MHz ~ 960MHz
17.7dB
48 V
1.4µA
-
600 mA
600W
105 V
SOT1250-1
SOT1250-1