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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  137/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA104501EHV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.752
-
-
-
-
-
-
-
-
-
-
PTFA212001FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione7.152
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
PTFA211801E V4 R250
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
pacchetto: 2-Flatpack, Fin Leads
Azione2.528
2.14GHz
15.5dB
28V
10µA
-
1.2A
35W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA091201HL V1
Infineon Technologies

IC FET RF LDMOS 120W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione3.472
960MHz
18.5dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
BLD6G22L-50,112
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT1130A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10.2A
  • Noise Figure: -
  • Current - Test: 170mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1130A
  • Supplier Device Package: CDFM4
pacchetto: SOT-1130A
Azione4.256
2.14GHz
14dB
28V
10.2A
-
170mA
8W
65V
SOT-1130A
CDFM4
MRF7S38010HSR5
NXP

FET RF 65V 3.6GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S-240
  • Supplier Device Package: NI-400S-240
pacchetto: NI-400S-240
Azione2.880
3.4GHz ~ 3.6GHz
15dB
30V
-
-
160mA
2W
65V
NI-400S-240
NI-400S-240
MRF9045LSR1
NXP

FET RF 65V 945MHZ NI-360S

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 18.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-360S
  • Supplier Device Package: NI-360 Short Lead
pacchetto: NI-360S
Azione5.952
945MHz
18.8dB
28V
-
-
350mA
45W
65V
NI-360S
NI-360 Short Lead
MRF6S21100NBR1
NXP

FET RF 68V 2.16GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.16GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione4.256
2.11GHz ~ 2.16GHz
14.5dB
28V
-
-
1.05A
23W
68V
TO-272BB
TO-272 WB-4
2N5951
Fairchild/ON Semiconductor

JFET N-CH 30V 13MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 13mA
  • Noise Figure: 2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione5.056
1kHz
-
15V
13mA
2dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5485_D75Z
Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 10mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.400
400MHz
-
15V
10mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF6G20LS-110,118
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 29A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione2.736
1.93GHz ~ 1.99GHz
19dB
28V
29A
-
900mA
25W
65V
SOT-502B
SOT502B
BLF7G22LS-160,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 36A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 43W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione5.520
2.11GHz ~ 2.17GHz
18dB
28V
36A
-
1.3A
43W
65V
SOT-502B
SOT502B
PTFB093608FVV3R2XTMA1
Infineon Technologies

FET RF 2CH 65V 960MHZ H-37275G-6

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 960MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.8A
  • Power - Output: 315W
  • Voltage - Rated: 65V
  • Package / Case: H-34275G-6/2
  • Supplier Device Package: H-34275G-6/2
pacchetto: H-34275G-6/2
Azione4.080
960MHz
20dB
28V
-
-
2.8A
315W
65V
H-34275G-6/2
H-34275G-6/2
PXAC182002FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.976
-
-
-
-
-
-
-
-
-
-
MRF6VP2600HR6
NXP

FET RF 2CH 110V 225MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
pacchetto: NI-1230
Azione3.760
225MHz
25dB
50V
-
-
2.6A
125W
110V
NI-1230
NI-1230
BLF10H6600PSU
Ampleon USA Inc.

RF FET LDMOS 110V 20.8DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 20.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione6.288
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539B
SOT539B
VRF151MP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 170V
  • Package / Case: M174
  • Supplier Device Package: M174
pacchetto: M174
Azione4.864
175MHz
14dB
50V
1mA
-
250mA
150W
170V
M174
M174
AFT23H160-25SR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 16.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-880X-4L4S-8
  • Supplier Device Package: NI-880X-4L4S-8
pacchetto: NI-880X-4L4S-8
Azione3.600
2.3GHz
16.7dB
28V
-
-
450mA
32W
65V
NI-880X-4L4S-8
NI-880X-4L4S-8
ARF446G
Microsemi Corporation

RF PWR MOSFET 900V 6.5A TO247

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 250V
  • Current Rating: 6.5A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 140W
  • Voltage - Rated: 900V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione6.224
40.68MHz
15dB
250V
6.5A
-
-
140W
900V
TO-247-3
TO-247
hot MRF8P9040NR1
NXP

FET RF 2CH 70V 960MHZ TO272-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320mA
  • Power - Output: 4W
  • Voltage - Rated: 70V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272-4
pacchetto: TO-272-4
Azione18.600
960MHz
19.1dB
28V
-
-
320mA
4W
70V
TO-272-4
TO-272-4
PD20010STR-E
STMicroelectronics

TRANS N-CH 40V POWERSO-10RF STR

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
pacchetto: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Azione5.392
2GHz
11dB
13.6V
5A
-
150mA
10W
40V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
MMRF1312HR5
NXP

TRANS 900-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 19.6dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 112V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
pacchetto: SOT-979A
Azione3.216
1.03GHz
19.6dB
50V
-
-
100mA
1000W
112V
SOT-979A
NI-1230-4H
BLF8G09LS-400PWJ
Ampleon USA Inc.

RF FET LDMOS 65V 20.6DB SOT1242B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 718.5MHz ~ 725.5MHz
  • Gain: 20.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 3.4A
  • Power - Output: 95W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1242B
  • Supplier Device Package: CDFM8
pacchetto: SOT-1242B
Azione5.856
718.5MHz ~ 725.5MHz
20.6dB
28V
-
-
3.4A
95W
65V
SOT-1242B
CDFM8
AFT27S006NT1
NXP

FET RF 65V 2.17GHZ PLD1.5W

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 22dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70mA
  • Power - Output: 28.8dBm
  • Voltage - Rated: 65V
  • Package / Case: PLD-1.5W-2
  • Supplier Device Package: PLD-1.5W-2
pacchetto: PLD-1.5W-2
Azione13.884
2.17GHz
22dB
28V
-
-
70mA
28.8dBm
65V
PLD-1.5W-2
PLD-1.5W-2
BLC10G16XS-600AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.427GHz ~ 1.518GHz
  • Gain: 17.4dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 720W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
pacchetto: -
Request a Quote
1.427GHz ~ 1.518GHz
17.4dB
32 V
2.8µA
-
1.9 A
720W
65 V
SOT-1258-4
SOT1258-4
BLC9G20LS-160PV
Ampleon USA Inc.

RF MOSFET LDMOS 28V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 2GHz
  • Gain: 19.8dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 860 mA
  • Power - Output: 160W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
pacchetto: -
Request a Quote
1.805GHz ~ 2GHz
19.8dB
28 V
1.4µA
-
860 mA
160W
65 V
SOT-1275-1
DFM6
DE150-501N04A
IXYS-RF

RF MOSFET DE150

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 4.5A
  • Noise Figure: -
  • Current - Test: 25 µA
  • Power - Output: 200W
  • Voltage - Rated: 500 V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
pacchetto: -
Request a Quote
-
-
-
4.5A
-
25 µA
200W
500 V
6-SMD, Flat Lead Exposed Pad
DE150
BLC10G18XS-400AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.7dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
pacchetto: -
Request a Quote
1.805GHz ~ 1.88GHz
15.7dB
32 V
2.8µA
-
800 mA
400W
65 V
SOT-1258-4
SOT1258-4